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    FABRICATION OF OPTICAL COMPONENTS USING SI, SIGE, SIGEC, AND CHEMICAL ENDPOINT DETECTION
    1.
    发明申请
    FABRICATION OF OPTICAL COMPONENTS USING SI, SIGE, SIGEC, AND CHEMICAL ENDPOINT DETECTION 审中-公开
    使用SI，SIGE，SIGEC和化学端点检测的光学元件的制造

    公开(公告)号：WO2004010166A2

    公开(公告)日：2004-01-29

    申请号：PCT/US0314125

    申请日：2003-05-01

    Applicant: UNIV CALIFORNIA

    Inventor： PETERSON JEFFREY ,  HUNT CHARLES

    IPC: G02B6/12 ,  G02B6/136 ,  G02B

    CPC classification number: G02B6/136 ,  G02B2006/121 ,  G02B2006/1215

    Abstract: One embodiment of the present invention provides a system to facilitate using selective etching to form optical components on a circuit device. The system operates by receiving a substrate composed of a first material including a buffer layer composed of a second material. The system forms a sacrificial layer composed of a third material on the buffer layer. Next, the system forms an optical fiber core composed of a fourth material on the sacrificial layer. After the optical fiber core has been formed, the system performs an etching operation using a selective etchant to remove the sacrificial layer. The system also applies a cladding layer to the optical fiber core.

    Abstract translation: 本发明的一个实施例提供一种便于使用选择性蚀刻以在电路器件上形成光学部件的系统。 该系统通过接收由包括由第二材料构成的缓冲层的第一材料构成的衬底来操作。 该系统在缓冲层上形成由第三材料构成的牺牲层。 接下来，该系统在牺牲层上形成由第四材料构成的光纤芯。 在形成光纤芯之后，系统使用选择性蚀刻剂进行蚀刻操作以去除牺牲层。 该系统还对光纤芯线施加覆层。

    FABRICATING STRUCTURES USING CHEMO-MECHANICAL POLISHING AND CHEMICALLY-SELECTIVE ENDPOINT DETECTION
    2.
    发明申请
    FABRICATING STRUCTURES USING CHEMO-MECHANICAL POLISHING AND CHEMICALLY-SELECTIVE ENDPOINT DETECTION 审中-公开
    使用化学机械抛光和化学选择性端点检测的织造结构

    公开(公告)号：WO03005421A3

    公开(公告)日：2003-08-28

    申请号：PCT/US0220453

    申请日：2002-06-26

    Applicant: UNIV CALIFORNIA

    Inventor： PETERSON JEFFREY ,  HUNT CHARLES

    IPC: B24B37/04 ,  B81C1/00 ,  H01L21/306 ,  B81B1/00

    CPC classification number: B81C1/00611 ,  B24B37/013 ,  B24B37/042 ,  B81C2201/0104 ,  B81C2201/0123 ,  H01L21/30604 ,  H01L21/30608

    Abstract: One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids created by a first etching operation. The process then forms a second layer composed of a second material over the first layer, so that the second layer fills in portions of voids in the first layer created by the first etching operation. Next, the process performs a chemo-mechanical polishing operation on the second layer down to the first layer so that only remaining portions of the second layer, within the voids created by the first etching operation, remain. The system then forms a third layer composed of a third material over the first layer and the remaining portions of the second layer, and performs a second etching operation using a selective etchant to remove the remaining portions of the second layer, thereby creating voids between the first layer and the third layer.

    Abstract translation: 本发明的一个实施方案提供了一种使用选择性蚀刻在硅衬底上形成结构的方法。 该处理开始于接收硅衬底，第一层由第一材料组成，第一层包括由第一蚀刻操作产生的空隙。 然后，该过程在第一层上形成由第二材料构成的第二层，使得第二层填充由第一蚀刻操作产生的第一层中的空隙的部分。 接下来，该过程在第二层上进行到第一层的化学机械抛光操作，使得仅在由第一蚀刻操作产生的空隙内的第二层的剩余部分保留。 然后，该系统在第一层和第二层的其余部分上形成由第三材料组成的第三层，并且使用选择性蚀刻剂进行第二蚀刻操作以去除第二层的剩余部分，从而在第二层之间产生空隙 第一层和第三层。

    METHOD FOR CO-FABRICATING STRAINED AND RELAXED CRYSTALLINE AND POLY-CRYSTALLINE STRUCTURES
    3.
    发明专利
    METHOD FOR CO-FABRICATING STRAINED AND RELAXED CRYSTALLINE AND POLY-CRYSTALLINE STRUCTURES 未知

    公开(公告)号：AU2003243255A1

    公开(公告)日：2003-12-02

    申请号：AU2003243255

    申请日：2003-05-15

    Applicant: UNIV CALIFORNIA

    Inventor： HUNT CHARLES ,  PETERSON JEFFREY

    IPC: H01L21/20 ,  H01L21/268

    Abstract: One embodiment of the present invention provides a system for co-fabricating strained and relaxed crystalline, poly-crystalline, and amorphous structures in an integrated circuit device using common fabrication steps. The system operates by first receiving a substrate. The system then fabricates multiple layers on this substrate. A layer within these multiple layers includes both strained structures and relaxed structures. These strained structures and relaxed structures are fabricated simultaneously using common fabrication steps.

    FABRICATION OF ELECTRONIC, MAGNETIC, OPTICAL, CHEMICAL, AND MECHANICAL SYSTEMS USING CHEMICAL ENDPOINT DETECTION
    4.
    发明专利
    FABRICATION OF ELECTRONIC, MAGNETIC, OPTICAL, CHEMICAL, AND MECHANICAL SYSTEMS USING CHEMICAL ENDPOINT DETECTION 未知

    公开(公告)号：AU2003230268A1

    公开(公告)日：2003-12-02

    申请号：AU2003230268

    申请日：2003-05-01

    Applicant: UNIV CALIFORNIA

    Inventor： PETERSON JEFFREY ,  HUNT CHARLES

    IPC: G02B6/43 ,  H01L21/306 ,  C23F1/00 ,  C25F3/00 ,  C03C15/00 ,  C03C25/68 ,  B44C1/22

    Abstract: One embodiment of the present invention provides a system that facilitates construction of electromagnetic, optical, chemical, and mechanical systems using chemical endpoint detection. The system operates by receiving a system description that specifies multiple components, including a first component and a second component. The system fabricates the first component and the second component using selected construction materials. The system also creates a first interconnection structure on the first component and a second interconnection structure on the second component. These interconnection structures can be created using a sacrificial layer and chemical endpoint detection. Next, the system brings the first component and the second component together by connecting the first interconnection structure and the second interconnection structure. These interconnection structures align the first component to the second component so that accurate alignment can be achieved.

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