公开(公告)号：WO2014179340A3

公开(公告)日：2014-12-24

申请号：PCT/US2014035920

申请日：2014-04-29

Applicant: UNIV NORTH CAROLINA

Inventor： CAHOON JAMES ,  CHRISTESEN JOSEPH ,  PINION CHRISTOPHER

IPC: H01L21/027 ,  H01L21/205

CPC classification number: H01L29/0673 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C1/0015 ,  B81C2201/013 ,  B81C2201/0171 ,  B81C2201/0176 ,  G01Q60/38 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/16 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/09 ,  Y02E10/50

Abstract: Methods of chemically encoding high-resolution shapes in silicon nanowires during metal nanoparticle catalyzed vapor-liquid-solid growth or vapor-solid-solid growth are provided. In situ phosphorus or boron doping of the silicon nanowires can be controlled during the growth of the silicon nanowires such that high-resolution shapes can be etched along a growth axis on the silicon nanowires. Nanowires with an encoded morphology can have high-resolution shapes with a size resolution of about 1,000 nm to about 10 nm and comprise geometrical shapes, conical profiles, nanogaps and gratings.

Abstract translation: 提供了在金属纳米颗粒催化的气 - 液 - 固 - 固生长或气 - 固 - 固生长期间在硅纳米线中化学编码高分辨率形状的方法。 可以在硅纳米线的生长期间控制硅纳米线的原位磷或硼掺杂，使得可以沿硅纳米线上的生长轴蚀刻高分辨率形状。 具有编码形态的纳米线可以具有约1000nm至约10nm的尺寸分辨率的高分辨率形状，并且包括几何形状，锥形轮廓，纳米光栅和光栅。