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    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES
    2.
    发明申请
    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES 审中-公开
    稳定电极/扩散障碍层的制造用于热电填充的SKUTTERUDITE设备

    公开(公告)号：WO2014205378A1

    公开(公告)日：2014-12-24

    申请号：PCT/US2014/043461

    申请日：2014-06-20

    Applicant: UNIVERSITY OF HOUSTON SYSTEM ,  JIE, Qing ,  REN, Zhifeng ,  CHEN, Gang ,  MASSACHUSETTS INSTITUTE OF TECHNOLOGY

    Inventor： JIE, Qing ,  REN, Zhifeng ,  CHEN, Gang

    IPC: H01L35/12 ,  H01L35/34

    CPC classification number: H01L35/34 ,  H01L35/08 ,  H01L35/14 ,  H01L35/20 ,  H01L35/22

    Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi 2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi 2 . In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 µΩ•cm 2 .

    Abstract translation: 公开了用于制造电触头的n型和p型填充方钴矿热电腿的方法。 将CoSi 2和掺杂剂的第一材料球磨以形成用n型方钴矿的第二粉末热机械加工的第一粉末，以形成设置在第一层和第三层之间的n型方钴矿层 掺杂CoSi2。 此外，将多种组分如铁和镍以及至少一种钴或铬球磨成形成第一粉末，其用p型方钴矿层热机械加工以形成p型方钴矿 层“第二层”设置在第一和第三层之间。 在热压之后的n型和p型方钴矿的第一层和方钴矿层之间的比接触电阻小于约10.0μΩ·cmgr·cm 2。

    FORMATION OF P-TYPE FILLED SKUTTERUDITE BY BALL-MILLING AND THERMO-MECHANICAL PROCESSING
    3.
    发明申请
    FORMATION OF P-TYPE FILLED SKUTTERUDITE BY BALL-MILLING AND THERMO-MECHANICAL PROCESSING 审中-公开
    通过球磨和热机械加工形成P型填充球磨机

    公开(公告)号：WO2014205258A1

    公开(公告)日：2014-12-24

    申请号：PCT/US2014/043247

    申请日：2014-06-19

    Applicant: UNIVERSITY OF HOUSTON SYSTEM ,  MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  JIE, Qing ,  REN, Zhifeng ,  CHEN, Gang

    Inventor： JIE, Qing ,  REN, Zhifeng ,  CHEN, Gang

    IPC: H01L35/12 ,  H01L35/34

    CPC classification number: H01L35/18 ,  B22F3/14 ,  B22F2301/00 ,  C22C1/0491 ,  C22C1/1084 ,  C22C12/00 ,  H01L35/20 ,  H01L35/34

    Abstract: A method of manufacturing a thermoelectric material comprising: ball-milling a compound comprising a plurality of components, the first component M comprising at least one of a rare earth metal, an actinide, an alkaline-earth metal, and an alkali metal, the second component T comprising a metal of subgroup VIII, and the third component X comprises a pnictogen atom. The compound may be ball-milled for up to 5 hours, and then thermo- mechanically processed by, for example, hot pressing the compound for less than two hours. Subsequent to the thermo-mechanical processing, the compound comprises a single filled skutterudite phase with a dimensionless figure of merit ( ZT ) above 1.0 and the compound has a composition following a formula of MT 4 X 12 .

    Abstract translation: 一种制造热电材料的方法，包括：对包含多个组分的化合物进行球磨，所述第一组分M包含稀土金属，锕系元素，碱土金属和碱金属中的至少一种，第二组分 组分T包含亚组VIII的金属，并且第三组分X包含酚醛原子。 该化合物可以球磨多达5小时，然后通过例如热压该化合物少于2小时进行热机械加工。 在热机械处理之后，化合物包括具有高于1.0的无量纲品质因数（ZT）的单一填充方钴矿相，并且化合物具有遵循MT4X12的式的组成。

    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES
    5.
    发明公开
    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES 有权
    HERSTELLUNG VON STABILEN ELEKTRODEN- / DIFFUSIONSBARRIERESCHICHTENFÜRTHERMOELEKTRISCHEGEFÜLLTESKUTTERUDITVORRICHTUNGEN

    公开(公告)号：EP3011609A1

    公开(公告)日：2016-04-27

    申请号：EP14814268.0

    申请日：2014-06-20

    Applicant: University of Houston System ,  Massachusetts Institute of Technology

    Inventor： JIE, Qing ,  REN, Zhifeng ,  CHEN, Gang

    IPC: H01L35/12 ,  H01L35/34

    Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μ&OHgr;·cm2.

    Abstract translation: 公开了用于制造电接触的n型和p型填充方钴矿热电腿的方法。 将CoSi 2和掺杂剂的第一材料球磨以形成第一粉末，其用n型方钴矿的第二粉末热机械加工以形成设置在第一层和第三层之间的n型方钴矿层 掺杂CoSi2。 此外，将多种组分如铁和镍以及至少一种钴或铬球磨成形成第一种粉末，其用p型方钴矿层热机械加工以形成p型方钴矿 层“第二层”设置在第一和第三层之间。 在热压之后的n型和p型方钴矿的第一层和方钴矿层之间的具体接触电阻小于约10.0μΩ·cmgr·cm 2。

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