公开(公告)号：DE60017689T2

公开(公告)日：2005-12-22

申请号：DE60017689

申请日：2000-11-24

Applicant: USHIO ELECTRIC INC

Inventor： KOMORI MINORU ,  YAMAGUCHI MASANORI

IPC: H01L21/027 ,  G01R19/00 ,  H01J7/44 ,  H01J33/00 ,  G01T1/16

Abstract: An electron beam irradiation processing device including an electron beam tube (1) and a current detection unit (11a) disposed outside of the window (1d) of the electron beam tube. The electron beam tube is adapted to radiate electron beams and has a window and an associated power-source unit that provides a power source (2). The current detection unit includes at least one of a conductor and a semiconductor covered by an insulating film, and an electron beam level measurement unit having a current measurement unit that measures the current flowing through the current detection unit. The amount of electron beams output from the electron beam tube is controlled by controlling the power-source unit as a function of the current flowing through the current detection unit. In addition, a method of measuring amount of electron beams radiated from an electron beam tube with a window including the steps of providing a current detection unit and measuring amount of electron beams radiated from the electron beam tube by measuring the current flowing through the current detection unit.

公开(公告)号：DE69913060T2

公开(公告)日：2004-08-26

申请号：DE69913060

申请日：1999-09-09

Applicant: USHIO ELECTRIC INC

Inventor： KOMORI MINORU

IPC: G11B5/31 ,  G03F7/38 ,  G03F7/40 ,  H01B3/36 ,  H01L21/027 ,  G03F7/20 ,  H01J37/317

Abstract: A process for curing a resist in which a resist is cured quickly and with high efficiency without gas, which is formed by irradiation with electron beams with which the resist is irradiated for curing, remaining in it and thereby increase its thermostability, is achieved by the following process steps: a first, the resist is irradiated with electron beams and kept at a temperature such that gas is produced and released in the resist, but no gas bubbles are formed in the resist; second, the resist is heated so that the gas produced in the first process step is dissipated to the outside from the resist; and third, the resist is irradiated with electron beams so that macromolecules are formed in the resist and the resist is cured.

公开(公告)号：DE60017689D1

公开(公告)日：2005-03-03

申请号：DE60017689

申请日：2000-11-24

Applicant: USHIO ELECTRIC INC

Inventor： KOMORI MINORU ,  YAMAGUCHI MASANORI

IPC: H01L21/027 ,  G01R19/00 ,  H01J7/44 ,  H01J33/00 ,  G01T1/16

Abstract: An electron beam irradiation processing device including an electron beam tube (1) and a current detection unit (11a) disposed outside of the window (1d) of the electron beam tube. The electron beam tube is adapted to radiate electron beams and has a window and an associated power-source unit that provides a power source (2). The current detection unit includes at least one of a conductor and a semiconductor covered by an insulating film, and an electron beam level measurement unit having a current measurement unit that measures the current flowing through the current detection unit. The amount of electron beams output from the electron beam tube is controlled by controlling the power-source unit as a function of the current flowing through the current detection unit. In addition, a method of measuring amount of electron beams radiated from an electron beam tube with a window including the steps of providing a current detection unit and measuring amount of electron beams radiated from the electron beam tube by measuring the current flowing through the current detection unit.

公开(公告)号：DE69913060D1

公开(公告)日：2004-01-08

申请号：DE69913060

申请日：1999-09-09

Applicant: USHIO ELECTRIC INC

Inventor： KOMORI MINORU

IPC: G11B5/31 ,  G03F7/38 ,  G03F7/40 ,  H01B3/36 ,  H01L21/027 ,  G03F7/20 ,  H01J37/317

Abstract: A process for curing a resist in which a resist is cured quickly and with high efficiency without gas, which is formed by irradiation with electron beams with which the resist is irradiated for curing, remaining in it and thereby increase its thermostability, is achieved by the following process steps: a first, the resist is irradiated with electron beams and kept at a temperature such that gas is produced and released in the resist, but no gas bubbles are formed in the resist; second, the resist is heated so that the gas produced in the first process step is dissipated to the outside from the resist; and third, the resist is irradiated with electron beams so that macromolecules are formed in the resist and the resist is cured.

公开(公告)号：JP2001221898A

公开(公告)日：2001-08-17

申请号：JP2000291545

申请日：2000-09-26

Applicant: USHIO ELECTRIC INC

Inventor： KOMORI MINORU ,  YAMAGUCHI MASANORI

IPC: G21K5/04

Abstract: PROBLEM TO BE SOLVED: To precisely measure the dose of an electron beam outputted from an electron beam(EB) tube and to adjust the dose of the electron beam radiated onto an object to a constant value under control. SOLUTION: A device for measuring the dose of an electron beam, that consists of a current detecting component 11a and a current measuring component 11b, is placed near the outside of a window 1b of the EB tube 1. The surface of the current detecting component 11a, which is composed of a conductor or a semiconductor, is coated with an insulant coating of a prescribed thickness. Some electrons in the electron beam emitted from the window 1d of the EB tube 1 are caught by the current detecting component 11a to generate a current in it. The generated current is sent from the current measuring component 11b to a controlling component 12, for example, which adjusts the dose of the electron beam emitted from the EB tube 1 to a constant value under control by controlling a filament power source 3. Since a conductor or a semiconductor coated with an insulating film is used as the current detecting component 11a, the dose of the electron beam outputted from the EB tube 1 can be measured precisely, without being affected by a suspended electric charge near the current detecting component 11a.

公开(公告)号：JP2000090414A

公开(公告)日：2000-03-31

申请号：JP25899698

申请日：1998-09-11

Applicant: USHIO ELECTRIC INC

Inventor： KOMORI MINORU

IPC: G11B5/31 ,  G03F7/38 ,  G03F7/40 ,  H01B3/36 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To realize a method to fast and efficiently cure a resist without leaving gas produced by irradiation of electron beams in the resist when the resist is to be cured by irradiation of electron beams. SOLUTION: In the treating method of a resist to increase its heat resistance by irradiation of electron beams, the method includes a first process to irradiate the resist with electron beams while heating the resist to a temp. at which forming does not occur, a process to heat the resist to emit the gas produced in the first process to the outside of the resist, and a third process to irradiate the resist with electron beams to polymerize and cure the resist after the second process.

公开(公告)号：JP2001143983A

公开(公告)日：2001-05-25

申请号：JP32287599

申请日：1999-11-12

Applicant: USHIO ELECTRIC INC

Inventor： KOMORI MINORU

IPC: H01L21/027 ,  B05D3/06 ,  B41M7/00 ,  H01J33/00

Abstract: PROBLEM TO BE SOLVED: To make it possible to process a work, regardless of a thick body or large body, by casting large energy an electron beam to the work even when the length between an vacuum tube type electron beam tube and the work is long. SOLUTION: An electron beam cast from an electron beam tube 3 (EB tube) is passed through a window 4 to the inside of a process chamber 5 and cast onto an irradiating object 2 like resist or ink on a work 1. The inside of the process chamber 5 has an atmosphere of gases, such as helium, a mixed gas of nitrogen and helium, neon, and the like with density lower than air (nitrogen). Since there is the gas with density lower than the air (nitrogen) in the process chamber 5, the attainable length of the electron beam from the electron beam tube is made long or its attainable range is made large.

公开(公告)号：JPH09145473A

公开(公告)日：1997-06-06

申请号：JP31072095

申请日：1995-11-29

Applicant: USHIO ELECTRIC INC

Inventor： OSAKO YASUSHI ,  KOMORI MINORU ,  TANAKA KAZUYA

IPC: G01J1/02 ,  G01J1/42

Abstract: PROBLEM TO BE SOLVED: To provide an ultraviolet ray illuminance measuring device which can be used as a measuring device of either type of an integral type and a separate type and can prevent heating of an electronic part or the like. SOLUTION: When ultraviolet ray illuminance in an ultraviolet irradiating processing device is measured, an integral type sensor part 2 is installed in an illuminance measuring device main body 1, a heat shielding cover 5 is put on it. An object is placed on a conveyor of the ultraviolet ray irradiating processing device, and illuminance of an ultraviolet ray irradiating area is measured. When illuminance or the like of spot-shaped ultravoilet rays emitted from a spot type ultraviolet ray irradiator is measured, a separate type sensor part 3 is installed in the illuminance measuring device main body 1, and ultraviolet ray illuminance is measured by an ultraviolet ray illuminace detecting part 3a of the separate type sensor part 3. When a surface temperature or the like of a processing object is measured, a temperature measuring sensor part 4 is installed in an illuminance meter main body 1, and a temperature of a measuring object is measured by a temperature detecting part 4a such as a thermocouple arranged on the tip of a lead wire 4b.

公开(公告)号：JPH0279396A

公开(公告)日：1990-03-19

申请号：JP23006888

申请日：1988-09-16

Applicant: USHIO ELECTRIC INC

Inventor： KOMORI MINORU ,  SUZUKI GIICHI

IPC: H05B41/24

Abstract: PURPOSE:To prevent noise from occurring in between a power source and lamp by converting rectangular wave for the output of a polarity switching circuit into sine wave which is input into the lamp. CONSTITUTION:A sine-wave conversion circuit 15 is provided in between the output of a polarity switching circuit 12 and an electric discharge lamp 2. The polarity switching circuit 12 is a full-bridge type inverter circuit, and is controlled in such a manner that at least one semiconductor element out of the groups of semiconductor element Tr1 to Tr2 which are on at a time performs switching with gradual large change in pulse width while the same group of the semiconductor element are on end then gradually changes smaller. A lamp current is thus made into smooth sine wave without noise.