公开(公告)号：US20220384632A1

公开(公告)日：2022-12-01

申请号：US17365996

申请日：2021-07-01

Applicant: United Microelectronics Corp.

Inventor： Chih Tung Yeh ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/51

Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a metal layer and a dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a trench. The trench exposes a part of the first nitride semiconductor layer. The metal layer is disposed in the trench. The dielectric layer is disposed in the trench and located between the metal layer and the first nitride semiconductor layer.

公开(公告)号：US12289914B2

公开(公告)日：2025-04-29

申请号：US17381989

申请日：2021-07-21

Applicant: United Microelectronics Corp.

Inventor： Chih Tung Yeh ,  Wen-Jung Liao

IPC: H10D64/00 ,  H01L21/02 ,  H10D30/01 ,  H10D30/47 ,  H10D62/824 ,  H10D62/85

Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first metal layer, a second metal layer and a dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first metal layer is disposed in the second nitride semiconductor layer. The second metal layer is disposed on the second nitride semiconductor layer. The dielectric layer is disposed between the first metal layer and the second nitride semiconductor layer and/or between the second metal layer and the second nitride semiconductor layer.

公开(公告)号：US20240038847A1

公开(公告)日：2024-02-01

申请号：US17892098

申请日：2022-08-21

Applicant: United Microelectronics Corp.

Inventor： Chih Tung Yeh ,  Chun-Liang Hou

IPC: H01L29/20 ,  H01L29/66 ,  H01L29/778 ,  H01L21/285

CPC classification number: H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L21/28587

Abstract: A gallium nitride device and a method for manufacturing a high electron mobility transistor are provided. The gallium nitride device includes a substrate, a channel layer disposed on the substrate, a barrier layer disposed on the channel layer, a cap layer disposed on the barrier layer, a gate disposed on the cap layer, a source, a drain, and ohmic sidewall dams. The source and the drain are formed in the cap layer and the barrier layer. Each of the source and the drain has a trench portion, and a contact below the trench portion and protruding into the channel layer. The ohmic sidewall dams are disposed on a sidewall of the trench portion of each of the source and the drain.

公开(公告)号：US20220393005A1

公开(公告)日：2022-12-08

申请号：US17381989

申请日：2021-07-21

Applicant: United Microelectronics Corp.

Inventor： Chih Tung Yeh ,  Wen-Jung Liao

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L21/02 ,  H01L29/66

Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first metal layer, a second metal layer and a dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first metal layer is disposed in the second nitride semiconductor layer. The second metal layer is disposed on the second nitride semiconductor layer. The dielectric layer is disposed between the first metal layer and the second nitride semiconductor layer and/or between the second metal layer and the second nitride semiconductor layer.