公开(公告)号：US20240243185A1

公开(公告)日：2024-07-18

申请号：US18171293

申请日：2023-02-17

Applicant: United Microelectronics Corp.

Inventor： Huan Chi Ma ,  Kuan-Ting Lin ,  Ying Jie Huang ,  Chien-Wen Yu

IPC: H01L29/66 ,  H01L21/225 ,  H01L21/311 ,  H01L29/10 ,  H01L29/207 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L21/2258 ,  H01L21/31116 ,  H01L29/1029 ,  H01L29/207 ,  H01L29/7786 ,  H01L29/2003

Abstract: Provided is a semiconductor device including an enhancement mode (E-mode) high electron mobility transistor (HEMT). The E-mode HEMT includes a substrate, and a channel layer disposed on the substrate. A barrier structure disposed on the channel layer. A pair of source/drain (S/D) metals respectively disposed on the channel layer at opposite sides of the barrier structure. A gate metal disposed on the barrier structure between the pair of S/D metals. The channel layer has a two-dimensional electron gas (2DEG) layer close to an interface between the channel layer and the barrier structure. A fluorine ion concentration in the channel layer adjacent to the 2DEG layer is greater than that away from the 2DEG layer.