公开(公告)号：US20190103492A1

公开(公告)日：2019-04-04

申请号：US15722801

申请日：2017-10-02

Applicant: United Microelectronics Corp.

Inventor： Cheng-Pu Chiu ,  Pei-Yu Chen ,  Shih-Min Lu ,  Ming-Yueh Tsai ,  Yung-Sung Lin ,  Te-Chang Hsu ,  Chih-Yi Wang ,  Chi-Hsuan Cheng ,  Sheng-Chen Chung ,  Yao-Jhan Wang

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/267 ,  H01L29/66 ,  H01L21/02

Abstract: A method for forming epitaxial material on base material includes forming a stress cap layer on a base layer of a first semiconductor material. Then, a stress is induced on the base layer, wherein the stress is a tensile stress or a compressive stress. The stress cap layer is removed. An epitaxial layer of a second semiconductor material is formed on the base layer, wherein the second semiconductor material is different from the first semiconductor material.

公开(公告)号：US09530871B1

公开(公告)日：2016-12-27

申请号：US15225836

申请日：2016-08-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Yueh Tsai ,  Jia-Feng Fang ,  Yi-Wei Chen ,  Jing-Yin Jhang ,  Rung-Yuan Lee ,  Chen-Yi Weng ,  Wei-Jen Wu

IPC: H01L21/8232 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L29/66795 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/324 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7851

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有鳍状结构的基板; 在鳍状结构上形成外延层; 在外延层上形成第一接触蚀刻停止层（CESL）; 在外延层中形成源/漏区; 并在第一个CESL上形成第二个CESL。

公开(公告)号：US09443757B1

公开(公告)日：2016-09-13

申请号：US14940120

申请日：2015-11-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Yueh Tsai ,  Jia-Feng Fang ,  Yi-Wei Chen ,  Jing-Yin Jhang ,  Rung-Yuan Lee ,  Chen-Yi Weng ,  Wei-Jen Wu

IPC: H01L29/78 ,  H01L21/768 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/08 ,  H01L23/535 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/324 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7851

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有鳍状结构的基板; 在鳍状结构上形成外延层; 在外延层上形成第一接触蚀刻停止层（CESL）; 在外延层中形成源/漏区; 并在第一个CESL上形成第二个CESL。