公开(公告)号：US20240063023A1

公开(公告)日：2024-02-22

申请号：US17947186

申请日：2022-09-19

Applicant: United Microelectronics Corp.

Inventor： Teng Yao Chang ,  Chih-Hsien Tang

IPC: H01L21/308 ,  H01L21/3105 ,  G03F7/00

CPC classification number: H01L21/3086 ,  H01L21/31053 ,  G03F7/0002

Abstract: A patterning process is provided. The patterning process comprises the following steps. A material layer is formed on a substrate. An imprinting process is performed on the material layer using an imprint stamp to form a patterned material layer having a plurality of pattern portions. A hard mask layer is formed between adjacent pattern portions. An etching process is performed using the hard mask layer as an etching mask to remove the pattern portions and a part of the substrate. The hard mask layer is removed.