公开(公告)号：US20150228788A1

公开(公告)日：2015-08-13

申请号：US14179563

申请日：2014-02-13

Applicant: United Microelectronics Corp.

Inventor： Chun-Feng Chen ,  Wen-Yu Yang ,  Yu-Cheng Tung ,  Chun-Hsien Huang ,  Hui-Shen Shih ,  Shih-Chang Chang

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/7847 ,  H01L21/76832 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636

Abstract: A stress memorization process including the following step is provided. A gate is formed on a substrate. A low-k dielectric layer with a dielectric constant lower than 3 is formed to entirely cover the gate and the substrate. A stress layer is formed to entirely cover the low-k dielectric layer. The stress layer and the low-k dielectric layer are removed. Moreover, a semiconductor structure including a contact etch stop layer is provided. A gate is disposed on a substrate. A porous layer entirely covers the gate and the substrate. A contact etch stop layer entirely covers the porous layer, wherein the thickness of the porous layer is thinner than the thickness of the contact etch stop layer.

Abstract translation: 提供包括以下步骤的应力记忆过程。 栅极形成在基板上。 形成介电常数低于3的低k电介质层，以完全覆盖栅极和衬底。 形成应力层以完全覆盖低k电介质层。 去除应力层和低k电介质层。 此外，提供了包括接触蚀刻停止层的半导体结构。 栅极设置在基板上。 多孔层完全覆盖栅极和衬底。 接触蚀刻停止层完全覆盖多孔层，其中多孔层的厚度比接触蚀刻停止层的厚度薄。

公开(公告)号：US20180122693A1

公开(公告)日：2018-05-03

申请号：US15342290

申请日：2016-11-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Yu Yang ,  Chien-Hua Shih ,  Hsin-Yi Chung ,  Shu-Hui Hu

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/76826

Abstract: A method for forming a semiconductor structure is provided, including the following steps. A first dielectric layer is formed on a substrate. An etching step is performed to the first dielectric layer. A N2O treating step is performed to an etched surface of the first dielectric layer. A second dielectric layer is formed on a N2O treated surface of the first dielectric layer.