公开(公告)号：EP2893770A4

公开(公告)日：2016-07-06

申请号：EP13834572

申请日：2013-09-05

Applicant: VAISALA OYJ

Inventor： TALVITIE HANNU ,  KORHONEN JUKKA ,  BLOMBERG MARTTI

IPC: H05B3/20 ,  F21V7/10 ,  G01J3/10 ,  G01J5/02 ,  G01J5/04 ,  G01J5/08 ,  G01J5/10 ,  G01J5/20 ,  G02B5/22 ,  H01L51/52 ,  H05B3/84

CPC classification number: G02B5/22 ,  F21V7/10 ,  G01J3/108 ,  G01J5/024 ,  G01J5/048 ,  G01J5/0809 ,  G01J5/10 ,  G01J5/20 ,  G01J2005/103 ,  H01L51/5271 ,  H01L51/529 ,  H05B3/84 ,  H05B2203/013

Abstract: The present publication describes a heat-resistant optical layered structure, a manufacturing method for a layered structure, and the use of a layered structure as a detector, emitter, and reflecting surface. The layered structure comprises a reflecting layer, an optical structure on top of the reflecting layer, and preferably shielding layers for shielding the reflecting layer and the optical structure. According to the invention, the optical structure on top of the reflecting layer comprises at least one partially transparent layer, which is optically fitted at a distance to the reflecting layer.

公开(公告)号：AU1407402A

公开(公告)日：2002-05-21

申请号：AU1407402

申请日：2001-11-07

Applicant: VAISALA OYJ ,  VALTION TEKNILLINEN

Inventor： BLOMBERG MARTTI

IPC: G01L9/12 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L29/84 ,  G01L1/14

Abstract: A capacitive pressure sensor structure, in particular for measurement of absolute pressure, and a method for manufacturing the sensor. The sensor includes at least one fixed electrode, and at least one movable electrode electrically isolated from said fixed electrode and spaced apart from said fixed electrode. A portion of said movable electrode is formed from a porous polycrystalline silicon layer that in a finished component remains as an integral portion of said flexibly movable electrode.

公开(公告)号：DE69511919T2

公开(公告)日：2000-05-04

申请号：DE69511919

申请日：1995-02-09

Applicant: VAISALA OYJ HELSINKI

Inventor： BLOMBERG MARTTI ,  LEHTO ARI ,  ORPANA MARKKU

IPC: G01B9/02 ,  G01J3/26 ,  G01N21/27 ,  G02B5/28 ,  G02B26/00

Abstract: The invention relates to an electrostatically tunable Fabry-Perot interferometer produced by surface micromechanical techniques for use in optical material analysis as an optical sweeping filter in which the optical measurement wavelength is centered at a wavelength lambda . According to the invention, the Fabry-Perot interferometer based sensor structure comprises a body block (1), two essentially parallel mirrors (41, 26) bonded to said body block (1), of which mirrors at least one (41) is partially transmitting and movable relative to the body block (1), said mirrors (41, 26) being spaced maximally by a few half-wavelengths, lambda /2, from each other, and both of the mirror structures (41, 26) include integral electrode structures (6, 20) capable of effecting an electrostatic force between said mirror structures (41, 26). According to the invention, the movable mirror structure (41) is provided with structurally weakened regions (15) surrounding the optical area (24) of the mirror so as to facilitate keeping the optical area (24) at a maximum degree of flatness, and at least one (20) of the electrode structures is adapted to surround said optical area (24) so as to achieve a mechanical lever action and avoid galvanic contact between the electrode (20) of the movable mirror structure (41) and the electrode (6) of the fixed mirror structure (26).

公开(公告)号：DE69511919D1

公开(公告)日：1999-10-14

申请号：DE69511919

申请日：1995-02-09

Applicant: VAISALA OYJ

Inventor： BLOMBERG MARTTI ,  LEHTO ARI ,  ORPANA MARKKU

IPC: G01B9/02 ,  G01J3/26 ,  G01N21/27 ,  G02B5/28 ,  G02B26/00

Abstract: The invention relates to an electrostatically tunable Fabry-Perot interferometer produced by surface micromechanical techniques for use in optical material analysis as an optical sweeping filter in which the optical measurement wavelength is centered at a wavelength lambda . According to the invention, the Fabry-Perot interferometer based sensor structure comprises a body block (1), two essentially parallel mirrors (41, 26) bonded to said body block (1), of which mirrors at least one (41) is partially transmitting and movable relative to the body block (1), said mirrors (41, 26) being spaced maximally by a few half-wavelengths, lambda /2, from each other, and both of the mirror structures (41, 26) include integral electrode structures (6, 20) capable of effecting an electrostatic force between said mirror structures (41, 26). According to the invention, the movable mirror structure (41) is provided with structurally weakened regions (15) surrounding the optical area (24) of the mirror so as to facilitate keeping the optical area (24) at a maximum degree of flatness, and at least one (20) of the electrode structures is adapted to surround said optical area (24) so as to achieve a mechanical lever action and avoid galvanic contact between the electrode (20) of the movable mirror structure (41) and the electrode (6) of the fixed mirror structure (26).

公开(公告)号：FI112644B

公开(公告)日：2003-12-31

申请号：FI20002472

申请日：2000-11-10

Applicant: VAISALA OYJ ,  VALTION TEKNILLINEN

Inventor： BLOMBERG MARTTI

IPC: G01L9/12 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L29/84 ,  G01L7/00

Abstract: A capacitive pressure sensor structure, in particular for measurement of absolute pressure, and a method for manufacturing the sensor. The sensor includes at least one fixed electrode, and at least one movable electrode electrically isolated from said fixed electrode and spaced apart from said fixed electrode. A portion of said movable electrode is formed from a porous polycrystalline silicon layer that in a finished component remains as an integral portion of said flexibly movable electrode.

公开(公告)号：FI20002472A

公开(公告)日：2002-05-11

申请号：FI20002472

申请日：2000-11-10

Applicant: VAISALA OYJ ,  VALTION TEKNILLINEN

Inventor： BLOMBERG MARTTI

IPC: G01L9/12 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L29/84 ,  G01L7/00

Abstract: A capacitive pressure sensor structure, in particular for measurement of absolute pressure, and a method for manufacturing the sensor. The sensor includes at least one fixed electrode, and at least one movable electrode electrically isolated from said fixed electrode and spaced apart from said fixed electrode. A portion of said movable electrode is formed from a porous polycrystalline silicon layer that in a finished component remains as an integral portion of said flexibly movable electrode.