-
公开(公告)号：JPS55105244A
公开(公告)日：1980-08-12
申请号：JP1252279
申请日：1979-02-06
Inventor： KUNIYOSHI HIDEO , ASANO TAKATERU
Abstract: PURPOSE:To enhance the sensitivity of an electron beam resist for forming a minute pattern by making up a specified straight chain decomposition type polymer or a copolymer thereof as a component of the resist with two constituents of high and low molecular regions. CONSTITUTION:A straight chain decomposition type polymer represented by the formula (where each of R1 and R2 is a group other than hydrogen atom), e.g. alpha- cyanoacrylate type polymer or a copolymer thereof as component of an electron beam resist is made up so that a high molecular region of about 200000-2 millions in average MW and a low molecular region of 20000 or less become 5-50wt%. By this resist composition low molecular chains are present among high molecular chain in a resist film, and the solubility of an electron beam-irradiated portion in a developer is increased, thereby raising an irradiated portion to unirradiated portion solubility ratio, that is, relative sensitivity.
-
公开(公告)号：JPS5291359A
公开(公告)日：1977-08-01
申请号：JP668476
申请日：1976-01-26
Applicant: VICTOR COMPANY OF JAPAN
Inventor： KUNIYOSHI HIDEO , TAKEHARA HIDEAKI , KANAI HIROSHI
Abstract: PURPOSE:To generate electron beams of a rectangular section efficiently and with ease for using them in video recording.
-
公开(公告)号：JPS5453966A
公开(公告)日：1979-04-27
申请号：JP12065677
申请日：1977-10-07
Inventor： ASANO TAKATERU , TSUJIMURA TSUTOMU , KUNIYOSHI HIDEO
IPC: G03F7/32 , C08G18/65 , G03C1/00 , G03C1/54 , G03F7/039 , G03F7/12 , G03F7/30 , G03G13/10 , H01L21/027 , H01L21/30 , H01L21/302
Abstract: PURPOSE:To develop the resist taking the major component for the poly alpha cyanoacrylate, poly alpha carbamylacrylate, or the copolymer of the both expressed in a given generic equation with the development solution including water. CONSTITUTION:Since the electron beam resist of copolymer system is produced for water soluble component with the beam emission if the copolymer component is specified, excellent relief can easily be obtained by giving water to the development solution or adding the water cleaning process in the development process only. The resist film is formed by solving the poly alpha cyanoethyl-acrylate into cyclohexanone and electron beam is emitted after heat treatment. Then, it is immersed in the developing solution in which ethylacetate and methylisobuthylketone is 1:1 for 90 seconds at room temperature and development is made by immersing it in the liquid in which isopropanol and water are 3:1. The developed screen obtained can be discovered for any flaw with the magnification of 10 thousand and accurate line can be observed.
-
公开(公告)号：JPS52122458A
公开(公告)日：1977-10-14
申请号：JP3951676
申请日：1976-04-08
Applicant: VICTOR COMPANY OF JAPAN
Inventor： KUNIYOSHI HIDEO , TAKEHARA HIDEAKI , KANAI HIROSHI
IPC: H01J37/06 , G11B9/10 , H01J29/48 , H01J37/063 , H01J37/30
Abstract: PURPOSE:To form a rectangular image formation which possesses a clear frame, by means of radiating an electron bean which possesses an uniform current density distribution in its cross section from an electron beam rectification hole, by means of possessing a rectangular shape cross section with a large ration of length and breadth.
-
公开(公告)号：JPS5296521A
公开(公告)日：1977-08-13
申请号：JP1371676
申请日：1976-02-10
Applicant: VICTOR COMPANY OF JAPAN
Inventor： TAKEHARA HIDEAKI , KUNIYOSHI HIDEO
Abstract: PURPOSE:To produce an information recording medium master disc wherein spiral guide grooves are formed by directly forming a given beam-sensitive material film which does not dissolve a beam-sensitive material film on the top surface of said film.
-
Patent Agency Ranking
公开(公告)号：JPS556341A
公开(公告)日：1980-01-17
申请号：JP7827978
申请日：1978-06-28
Applicant: VICTOR COMPANY OF JAPAN , FUJI YAKUHIN KOGYO KK
Inventor： KUNIYOSHI HIDEO , TSUJIMURA TSUTOMU
IPC: G03F7/039 , G03F7/30 , G03F7/32 , H01L21/027
Abstract: PURPOSE:To enable formation of a pattern without any chap in the developed area, by stopping development of a resist, such as poly-alpha-cyanoacrylate after development by use of a specified mixed solution, or rinsing the resist with the solution. CONSTITUTION:A resist film formed on a substrate by using poly-alpha-cyanoacrylate or poly-alpha-amidoacrylate of the formula, or these copolymer is, after prebaking, irradiated by electron beams. The resist is developing with a solution, such as a mixture of ethyl acetate and methyl isobutyl ketone, and then, development stop or rinse is carried out with a solvent mixture consisting of an organic solvent incapable of dissolving the resist polymer, such as methyl isobutyl ketone and of an organic solvent capable of dissolving the resist polymer, such as ethyl cellosolve acetate in an amount of 2 to 30%.
-
公开(公告)号：JPS5461531A
公开(公告)日：1979-05-17
申请号：JP12797077
申请日：1977-10-25
Inventor： ASANO TAKATERU , TSUJIMURA TSUTOMU , KUNIYOSHI HIDEO
IPC: G03F7/36 , B41M5/00 , B41M5/26 , G03F7/00 , G03F7/039 , G03F7/30 , G03G5/00 , H01L21/02 , H01L21/027
Abstract: PURPOSE:To sufficiently satisfy the sensitivity and resolution by heating a substrate in a constant temperature bath after a resist composed mainly of poly-alpha-cyanoacrylate with electron beams. CONSTITUTION:An electron beam resist, whcih is composed mainly of poly-alpha- cyanoacrylate of Formula (wherein: X stands for cyano or carbamyl; R stands for a lower class alkyl; and n stands for a positive integer), poly-alpha-carbamylacrylate, or their copolymer, is formed on a substrate in a thickness of 0.5 to 1.5 microns and is prebaked at a low temperature. After having been irradiated with an electron beam, the substrate is heated in a constant temperature bath at 140 to 180 deg.C for 5 to 60 minutes in accordance with the depth of the irradiated portion after development. The irradiated region is diffused by the heat treatment to leave a non-irradiated portion thereby to form a pattern.
-
8.发明专利
公开(公告)号：JPS5276240A
公开(公告)日：1977-06-27
申请号：JP15199875
申请日：1975-12-22
Applicant: VICTOR COMPANY OF JAPAN
Inventor： KUNIYOSHI HIDEO , TAKEHARA HIDEAKI
-
公开(公告)号：JPS55134845A
公开(公告)日：1980-10-21
申请号：JP4179079
申请日：1979-04-06
Inventor： ASANO TAKATERU , SATOU KIYOSHI , TSUJIMURA TSUTOMU , MATSUMOTO YOUKO , KUNIYOSHI HIDEO , KAWARASAKI YOUICHI
IPC: G03F7/20 , C08F20/00 , C08F22/32 , C08F222/32 , G03C1/72 , G03C5/08 , G03F7/004 , G03F7/039 , H01L21/30
Abstract: PURPOSE:To obtain a mask having superior sensitivity and resolving power and suitable for use mainly in manufacture of an integrated circuit by using an electron beam resist based on a copolymer of cyanoethyl acrylate and a specified ratio of cyanomethyl acrylate. CONSTITUTION:Cyanoethyl acrylate and 0.5-15mol% of cyanomethyl acrylate are copolymerized at about 0 deg.C in cyclohexane and dimethylsulfoxide to form a copolymer with an average MW of 100,000-400,000. This copolymer solution is coated onto a chromium mask substrate, heat treated, scanned with electron beams to draw an image, dipped in a mixed developer or gamma-butyrolactone, isopropyl alcohol and water, and washed with isopropanol or the like to form a resist image. The developed substrate is then postbacked and etched, and by removing the resist film a hard mask having high resolving power is obtained.
-
10.发明专利
公开(公告)号：JPS52116204A
公开(公告)日：1977-09-29
申请号：JP3278776
申请日：1976-03-25
Applicant: VICTOR COMPANY OF JAPAN
Inventor： TAKEHARA HIDEAKI , KUNIYOSHI HIDEO
Abstract: PURPOSE:To control the current density distribution of an electron beam and form spiral grooves having a desired sectional shape to an electron beam sensitive material by controlling the incident angle of the electron beam with an electronic lens rather than with a trimming mask.
-
-
-
-
-
-
-
-
-
Search Results
13
records
(took 0.061 seconds)
