公开(公告)号：US10895793B2

公开(公告)日：2021-01-19

申请号：US16249822

申请日：2019-01-16

Applicant: View, Inc.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US12072598B2

公开(公告)日：2024-08-27

申请号：US18322472

申请日：2023-05-23

Applicant: View, Inc.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert Tad Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu Ajit Pradhan ,  Ronald M. Parker

IPC: G02F1/153

CPC classification number: G02F1/153 ,  G02F2201/501 ,  G02F2201/508

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US20230314893A1

公开(公告)日：2023-10-05

申请号：US18322472

申请日：2023-05-23

Applicant: View, Inc.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert Tad Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu Ajit Pradhan ,  Ronald M. Parker

IPC: G02F1/153

CPC classification number: G02F1/153 ,  G02F2201/508 ,  G02F2201/501

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US11698566B2

公开(公告)日：2023-07-11

申请号：US16453891

申请日：2019-06-26

Applicant: View, Inc.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

CPC classification number: G02F1/153 ,  G02F2201/501 ,  G02F2201/508

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US20210103195A1

公开(公告)日：2021-04-08

申请号：US17247541

申请日：2020-12-15

Applicant: View, Inc.

Inventor： Sridhar K. Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Gillaspie ,  Todd Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US10520783B2

公开(公告)日：2019-12-31

申请号：US15537370

申请日：2015-12-15

Applicant: View, Inc.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US20170371218A1

公开(公告)日：2017-12-28

申请号：US15537370

申请日：2015-12-15

Applicant: VIEW, INC.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US20240377692A1

公开(公告)日：2024-11-14

申请号：US18781422

申请日：2024-07-23

Applicant: View, Inc.

Inventor： Sridhar K. Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Gillaspie ,  Todd Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US11934080B2

公开(公告)日：2024-03-19

申请号：US17247541

申请日：2020-12-15

Applicant: View, Inc.

Inventor： Sridhar K. Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Gillaspie ,  Todd Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

CPC classification number: G02F1/153 ,  G02F2201/501 ,  G02F2201/508

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US20190339579A1

公开(公告)日：2019-11-07

申请号：US16453891

申请日：2019-06-26

Applicant: View, Inc.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.