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公开(公告)号：US12072598B2
公开(公告)日：2024-08-27
申请号：US18322472
申请日：2023-05-23
Applicant: View, Inc.
Inventor： Sridhar Karthik Kailasam , Dhairya Shrivastava , Zhiwei Cai , Robert Tad Rozbicki , Dane Thomas Gillaspie , Todd William Martin , Anshu Ajit Pradhan , Ronald M. Parker
IPC: G02F1/153
CPC classification number: G02F1/153 , G02F2201/501 , G02F2201/508
Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.
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2.发明公开公开(公告)号：US20230393442A1
公开(公告)日：2023-12-07
申请号：US18452427
申请日：2023-08-18
Applicant: View, Inc.
CPC classification number: G02F1/1533 , G02F1/155 , G02F2001/1555 , G02F2001/1536 , G02F2201/08
Abstract: Certain embodiments relate to optical devices and methods of fabricating optical devices that pre-treat a sub-layer to enable selective removal of the pre-treated sub-layer and overlying layers. Other embodiments pertain to methods of fabricating an optical device that apply a sacrificial material layer.
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公开(公告)号：US10583523B2
公开(公告)日：2020-03-10
申请号：US14398117
申请日：2013-05-16
Applicant: View, Inc.
Inventor： Todd William Martin
IPC: B23K26/00 , G02F1/153 , B23K26/046 , B23K26/06 , B23K26/08 , B23K26/40 , B23K26/361 , G02F1/1523 , B23K103/00
Abstract: Methods of circumscribing defects in optical devices are described. A perimeter is formed about a defect by laser ablation, where the perimeter electrically isolates the defect. The perimeter does not have damage due to excess energy from the laser and thus does not create new electrical shorts.
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公开(公告)号：US10295880B2
公开(公告)日：2019-05-21
申请号：US15390421
申请日：2016-12-23
Applicant: View, Inc.
Inventor： Abhishek Anant Dixit , Todd William Martin , Anshu A. Pradhan
IPC: G02F1/153 , G02F1/15 , G02F1/1333 , G02F1/1523 , B32B17/10 , G02F1/155
Abstract: Certain aspects pertain to methods of fabricating an optical device on a substantially transparent substrate that include a pre-deposition operation that removes a width of lower conductor layer at a distance from the outer edge of the substrate to form a pad at the outer edge. The pad and any deposited layers of the optical device may be removed in a post edge deletion operation.
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公开(公告)号：US20190086756A1
公开(公告)日：2019-03-21
申请号：US16195693
申请日：2018-11-19
Applicant: View, Inc.
Inventor： Abhishek Anant Dixit , Todd William Martin , Anshu A. Pradhan
IPC: G02F1/15 , B32B17/10 , G02F1/1333 , G02F1/153 , G02F1/155
Abstract: Certain aspects pertain to methods of fabricating an optical device on a substantially transparent substrate that include a pre-deposition operation that removes a width of lower conductor layer at a distance from the outer edge of the substrate to form a pad at the outer edge. The pad and any deposited layers of the optical device may be removed in a post edge deletion operation.
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Patent Agency Ranking
公开(公告)号：US20190032195A1
公开(公告)日：2019-01-31
申请号：US16150168
申请日：2018-10-02
Applicant: View, Inc.
Inventor： Disha Mehtani , Sridhar Karthik Kailasam , Trevor Frank , Todd William Martin , Jason Satern , Que Anh Song Nguyen , Dhairya Shrivastava , Martin John Neumann , Anshu A. Pradhan , Robert T. Rozbicki
Abstract: Described are methods of fabricating lithium sputter targets, lithium sputter targets, associated handling apparatus, and sputter methods including lithium targets. Various embodiments address adhesion of the lithium metal target to a support structure, avoiding and/or removing passivating coatings formed on the lithium target, uniformity of the lithium target as well as efficient cooling of lithium during sputtering. Target configurations used to compensate for non-uniformities in sputter plasma are described. Modular format lithium tiles and methods of fabrication are described. Rotary lithium sputter targets are also described.
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公开(公告)号：US20250093723A1
公开(公告)日：2025-03-20
申请号：US18773213
申请日：2024-07-15
Applicant: View, Inc.
Inventor： Abhishek Anant Dixit , Todd William Martin , Anshu A. Pradhan
IPC: G02F1/1524 , B32B17/10 , B32B37/14 , B32B38/00 , B32B38/10 , G02F1/1333 , G02F1/153 , G02F1/155
Abstract: Certain aspects pertain to methods of fabricating an optical device on a substantially transparent substrate that include a pre-deposition operation that removes a width of lower conductor layer at a distance from the outer edge of the substrate to form a pad at the outer edge. The pad and any deposited layers of the optical device may be removed in a post edge deletion operation.
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8.发明授权公开(公告)号：US12072599B2
公开(公告)日：2024-08-27
申请号：US18452427
申请日：2023-08-18
Applicant: View, Inc.
CPC classification number: G02F1/1533 , G02F1/155 , G02F2001/1536 , G02F2001/1555 , G02F2201/08
Abstract: Certain embodiments relate to optical devices and methods of fabricating optical devices that pre-treat a sub-layer to enable selective removal of the pre-treated sub-layer and overlying layers. Other embodiments pertain to methods of fabricating an optical device that apply a sacrificial material layer.
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公开(公告)号：US20230314893A1
公开(公告)日：2023-10-05
申请号：US18322472
申请日：2023-05-23
Applicant: View, Inc.
Inventor： Sridhar Karthik Kailasam , Dhairya Shrivastava , Zhiwei Cai , Robert Tad Rozbicki , Dane Thomas Gillaspie , Todd William Martin , Anshu Ajit Pradhan , Ronald M. Parker
IPC: G02F1/153
CPC classification number: G02F1/153 , G02F2201/508 , G02F2201/501
Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.
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公开(公告)号：US11698566B2
公开(公告)日：2023-07-11
申请号：US16453891
申请日：2019-06-26
Applicant: View, Inc.
Inventor： Sridhar Karthik Kailasam , Dhairya Shrivastava , Zhiwei Cai , Robert T. Rozbicki , Dane Thomas Gillaspie , Todd William Martin , Anshu A. Pradhan , Ronald M. Parker
IPC: G02F1/153
CPC classification number: G02F1/153 , G02F2201/501 , G02F2201/508
Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.
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