公开(公告)号：US20230349070A1

公开(公告)日：2023-11-02

申请号：US18042725

申请日：2021-08-19

Applicant: WASEDA UNIVERSITY

Inventor： Hiroshi KAWARADA ,  Wenxi FEI ,  Aoi MORISHITA

IPC: C30B25/18 ,  C30B29/04

CPC classification number: C30B25/18 ,  C30B29/04

Abstract: Provided are a stack and a single-crystal diamond substrate that can be manufactured with high quality and at low cost, and a method of manufacturing the same. A stack of a ruthenium film 3 and a diamond film 4, and a single-crystal diamond substrate 1 include the ruthenium film 3 and the diamond film 4 heteroepitaxially grown on the ruthenium film 3. A surface of the ruthenium film 3 is the (0001) plane, and a surface of the diamond film 4 is a (111) plane. Ruthenium is used as a base film for heteroepitaxially growing the diamond film 4.

公开(公告)号：US20150054000A1

公开(公告)日：2015-02-26

申请号：US14467153

申请日：2014-08-25

Applicant: YOKOGAWA ELECTRIC CORPORATION ,  WASEDA UNIVERSITY

Inventor： Yukihiro SHINTANI ,  Toshiyuki SARUYA ,  Hiroshi KAWARADA

IPC: H01L21/04 ,  G01N27/414 ,  H01L29/66

CPC classification number: H01L21/042 ,  C23C16/27 ,  C23C16/56 ,  G01N27/4145 ,  H01L21/3065 ,  H01L29/66045

Abstract: A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond thin film and a second substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the presence of the fluorocarbon deposition on the surface of diamond thin film based on required surface properties of the diamond thin film.

Abstract translation: 根据本发明的一个方面的用于处理金刚石薄膜的表面的方法，在不存在碳氟化合物沉积的情况下进行用氟端子取代金刚石薄膜的一部分氢端子的第一取代过程 基于金刚石薄片的所需表面性质，在金刚石薄膜的表面上，在金刚石薄膜的表面上，在金刚石薄膜的表面上存在金刚石薄膜的表面和第二取代过程，用于在氟碳沉积的存在下用氟端子取代金刚石薄膜的一部分氢端子 电影。