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公开(公告)号：US20230349070A1
公开(公告)日：2023-11-02
申请号：US18042725
申请日：2021-08-19
Applicant: WASEDA UNIVERSITY
Inventor： Hiroshi KAWARADA , Wenxi FEI , Aoi MORISHITA
Abstract: Provided are a stack and a single-crystal diamond substrate that can be manufactured with high quality and at low cost, and a method of manufacturing the same. A stack of a ruthenium film 3 and a diamond film 4, and a single-crystal diamond substrate 1 include the ruthenium film 3 and the diamond film 4 heteroepitaxially grown on the ruthenium film 3. A surface of the ruthenium film 3 is the (0001) plane, and a surface of the diamond film 4 is a (111) plane. Ruthenium is used as a base film for heteroepitaxially growing the diamond film 4.
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