公开(公告)号：JPH1064822A

公开(公告)日：1998-03-06

申请号：JP14865297

申请日：1997-05-22

Applicant: XEROX CORP

Inventor： FORK DAVID K ,  BOYCE JAMES B ,  MEI PING ,  READY STEVE ,  JOHNSON RICHARD I ,  ANDERSON GREG B

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a technique for finer and even particle size of polycrystal silicon without increasing manufacture time and cost. SOLUTION: Used for a semiconductor device wherein a silicon layer 104 formed on a substrate 100 is irradiated with a laser beam 106 for crystallization so that a polycrystal silicon layer 108 is obtained, a buffer layer 102 is formed between the substrate 100 and the silicon layer 104. Relating to such buffering substrate as containing the buffer layer 102, the buffer layer 102 has a melting point higher than the limit temperature of the substrate 100, in addition, at crystallization of the silicon layer 104, it regulates nucleus generation density of the silicon layer 104 for forming an even silicon crystal particles on the buffer layer 102, and functions as a base for isotropic particle growth in crystallization process of the silicon layer 104.

公开(公告)号：JP2009049428A

公开(公告)日：2009-03-05

申请号：JP2008272411

申请日：2008-10-22

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： FORK DAVID K ,  BOYCE JAMES B ,  MEI PING ,  READY STEVE ,  JOHNSON RICHARD I ,  ANDERSON GREG B

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02675 ,  Y10S438/967 ,  Y10T428/24479 ,  Y10T428/24926 ,  Y10T428/265

Abstract: PROBLEM TO BE SOLVED: To provide a technique for finer and even particle size of polycrystal silicon without increasing manufacture time and cost. SOLUTION: Used for a semiconductor device wherein a silicon layer 104 formed on a substrate 100 is irradiated with a laser beam 106 for crystallization so that a polycrystal silicon layer 108 is obtained, a buffer layer 102 is formed between the substrate 100 and the silicon layer 104. Relating to such buffered substrate as containing the buffer layer 102, the buffer layer 102 has a melting point higher than the limit temperature of the substrate 100, in addition, at crystallization of the silicon layer 104, it regulates nucleus generation density of the silicon layer 104 for forming an even silicon crystal particles on the buffer layer 102, and functions as a base for isotropic particle growth in crystallization process of the silicon layer 104. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在不增加制造时间和成本的情况下提供更精细甚至粒径的多晶硅的技术。 解决方案：用于其上形成在基板100上的硅层104用激光束106照射以进行结晶的半导体器件，从而获得多晶硅层108，在基板100和基板100之间形成缓冲层102 与含有缓冲层102的缓冲基板相比，缓冲层102的熔点高于基板100的极限温度，此外，在硅层104的结晶化时，其调节核产生 用于在缓冲层102上形成均匀的硅晶粒的硅层104的密度，并且作为硅层104的结晶过程中的各向同性粒子生长的基底起作用。（C）2009，JPO＆INPIT