公开(公告)号：CA2414325A1

公开(公告)日：2003-06-21

申请号：CA2414325

申请日：2002-12-13

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  KNIESSL MICHAEL A ,  BOUR DAVID P

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/46 ,  H01S5/183 ,  H01S5/323 ,  H01S5/343 ,  H01L21/18 ,  H01S5/125 ,  H01S5/187

Abstract: A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphi re substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphi re substrate removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices.

公开(公告)号：CA2414325C

公开(公告)日：2007-09-25

申请号：CA2414325

申请日：2002-12-13

Applicant: XEROX CORP

Inventor： KNIESSL MICHAEL A ,  CHUA CHRISTOPHER L ,  BOUR DAVID P

IPC: H01L21/18 ,  H01L33/00 ,  H01L33/10 ,  H01L33/46 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/323 ,  H01S5/343

Abstract: A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphi re substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphi re substrate removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices.