公开(公告)号：JP2010147504A

公开(公告)日：2010-07-01

申请号：JP2010058879

申请日：2010-03-16

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： MICHAEL A KNEISEL ,  TREAT DAVID W

IPC: C23C16/34 ,  H01L21/205 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L31/18 ,  H01S5/042 ,  H01S5/343

CPC classification number: C30B29/40 ,  C30B25/02 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/0262 ,  H01L31/1844 ,  Y02E10/544

Abstract: PROBLEM TO BE SOLVED: To provide an excellent nitrogen source for forming an InGaAsN structure.
SOLUTION: A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation 508 of introducing ammonia with an agent which assists in the decomposition of ammonia into a reaction chamber with the GaAs film.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供用于形成InGaAsN结构的优异的氮源。 解决方案：描述了使用氨以形成具有氮原子的GaAs合金的方法。 该方法包括将氨引入有助于将氨分解成与GaAs膜反应室的操作508。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2004193616A

公开(公告)日：2004-07-08

申请号：JP2003409775

申请日：2003-12-09

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： MICHAEL A KNEISEL ,  TREAT DAVID W

IPC: C23C16/34 ,  C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L31/18 ,  H01S5/042 ,  H01S5/343

CPC classification number: C30B29/40 ,  C30B25/02 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/0262 ,  H01L31/1844 ,  Y02E10/544

Abstract: PROBLEM TO BE SOLVED: To provide a good nitrogen source for forming an InGaAs structure.
SOLUTION: The process uses ammonia in order to form GaAs using nitrogen atoms. The process includes an operation 508 for introducing ammonia together with an acceleration reagent of ammonia decomposition into a reaction chamber including a thin film of GaAs.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2001203422A

公开(公告)日：2001-07-27

申请号：JP2001004591

申请日：2001-01-12

Applicant: XEROX CORP

Inventor： DANIEL HOFUSHUTETTAA ,  PAOLI THOMAS L ,  ROMANO LINDA T ,  SUN DECAI ,  DAVID P BARR ,  MICHAEL A KNEISEL ,  CHRIS G VAN DE WOORE ,  NOBLE M JOHNSON

IPC: H01S5/02 ,  H01S5/12 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a gain combination type DFB GaN laser. SOLUTION: The distributed feedback laser 100 has a substrate 102, an active layer 110, comprising at least one from among aluminum, gallium, indium and nitrogen, a lower side clad layer 106 which has alloy comprising at least one from among aluminum, gallium, indium and nitrogen and is in the lower side of the active layer 110 and the upper side clad layer 123 which comprises at least one of the aluminum, gallium, indium and nitrogen and is in the upper side of the active layer 110, and periodical variations in at least either of the lower side and upper side clad layers 106, 123 provides distributed optical feedback.