TWO-DIMENSIONAL MICRO-MIRROR ARRAY ENHANCEMENTS
    2.
    发明申请
    TWO-DIMENSIONAL MICRO-MIRROR ARRAY ENHANCEMENTS 审中-公开
    二维微镜阵列增强

    公开(公告)号:WO0161400A3

    公开(公告)日:2003-07-10

    申请号:PCT/US0105309

    申请日:2001-02-16

    CPC classification number: G02B26/085 G02B26/0841

    Abstract: A micro-mirror strip assembly having a plurality of two-dimensional micro-mirror structures with improved deflection and other characteristics is presented. In the micro-mirror structures, electrodes for electrostatic deflection are disposed on conical or quasi-conical entities that are machined, attached or molded into a substrate. Torsion sensors (244) are provided along the axes of rotation to control deflection of the quadrant deflection electrodes. The shielded sensor structure (240) includes a silicon layer (241), an insulating layer (242) and a metal layer (243). The structure further includes a sensor implant resistor (244) in the silicon layer (241) and a shield (245) that is applied over the sensor implant resistor (244) to stabilise sensor output and eliminate light sensitivity.

    Abstract translation: 提出了具有多个具有改进的偏转和其它特性的二维微镜结构的微镜条组件。 在微镜结构中,用于静电偏转的电极设置在被加工,附接或模制成基底的锥形或准圆锥形实体上。 扭转传感器(244)沿旋转轴提供以控制象限偏转电极的偏转。 屏蔽传感器结构(240)包括硅层(241),绝缘层(242)和金属层(243)。 该结构还包括在硅层(241)中的传感器注入电阻器(244)和施加在传感器注入电阻器(244)上方以稳定传感器输出并消除光敏感的屏蔽件(245)。

    WAFER BONDING TECHNIQUES TO MINIMIZE BUILT-IN STRESS OF SILICON MICROSTRUCTURES AND MICRO-MIRRORS
    3.
    发明申请
    WAFER BONDING TECHNIQUES TO MINIMIZE BUILT-IN STRESS OF SILICON MICROSTRUCTURES AND MICRO-MIRRORS 审中-公开
    最小化硅微结构和微镜的内置应力的波形焊接技术

    公开(公告)号:WO0154176A9

    公开(公告)日:2003-01-16

    申请号:PCT/US0101758

    申请日:2001-01-18

    Inventor: SLATER TIMOTHY G

    CPC classification number: H01L21/2007 H01L21/76251

    Abstract: A bonded wafer fabrication mechanism for a micro-mirror structure provides for oxidizing a device wafer instead of a handle wafer or splitting thermal oxidation processing between the device wafer and the handle wafer prior to etching. The flatness of mirrors in micro-mirror structures fabricated according to such a mechanism is substantially improved.

    Abstract translation: 用于微镜结构的接合晶片制造机构提供了在蚀刻之前,在器件晶片和处理晶片之间氧化器件晶片而不是处理晶片或分裂热氧化处理。 根据这种机制制造的微镜结构中的反射镜的平面度显着提高。

    SEALED INTEGRAL MEMS SWITCH
    7.
    发明申请
    SEALED INTEGRAL MEMS SWITCH 审中-公开
    密封整体MEMS开关

    公开(公告)号:WO2004013898A3

    公开(公告)日:2004-06-10

    申请号:PCT/US0324255

    申请日:2003-08-04

    CPC classification number: H01P1/127 H01H59/0009 H01H2059/0054

    Abstract: A MEMS switch includes a micro-machined monolithic layer (122) having, a seesaw (52), a pair of torsion bars (66a, 66b), and a frame (64). The frame (64) supports the seesaw (52) for rotation about an axis (68) established by the torsion bars (66a, 66b). Shorting bars (58a, 58b) at ends of the seesaw (52) connect across pairs of switch contacts (56a1, 56a2, 56b1, 56b2) carried on a substrate (174) bonded to one surface of the layer (122). A base (104) is also joined to a surface of the layer (122) opposite the substrate (174). The substrate (174) carries electrodes (54a, 54b) for applying forces to the seesaw (52) urging it to rotate about the axis (68). An electrical contact island (152) supported at a free end of a cantilever (166) ensures good electrical conduction between ground plates (162a, 162b) on the layer (122) and electrical conductors on the substrate (174).

    Abstract translation: MEMS开关包括具有跷跷板(52),一对扭杆(66a,66b)和框架(64)的微加工整体层(122)。 框架(64)支撑用于围绕由扭杆(66a,66b)建立的轴线(68)旋转的跷跷板(52)。 在跷跷板(52)的端部处的短路棒(58a,58b)连接在承载在层(122)的一个表面上的衬底(174)上的开关触点(56a1,56a2,56b1,5Bb2)对上。 基底(104)也与衬底(174)相对的层(122)的表面接合。 衬底(174)承载用于向跷跷板(52)施力的电极(54a,54b),以推动其围绕轴线(68)旋转。 支撑在悬臂(166)的自由端的电接触岛(152)确保层(122)上的接地板(162a,162b)和衬底(174)上的电导体之间良好的电导通。

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