-
公开(公告)号：CN103503132A
公开(公告)日：2014-01-08
申请号：CN201180070578.9
申请日：2011-06-09
Applicant: 三菱电机株式会社
CPC classification number: H01L23/4952 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/115 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/06181 , H01L2224/29201 , H01L2224/29347 , H01L2224/29355 , H01L2224/30181 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40179 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83139 , H01L2224/8314 , H01L2224/83143 , H01L2224/83801 , H01L2224/83815 , H01L2224/84138 , H01L2224/84143 , H01L2224/84205 , H01L2224/84801 , H01L2224/85205 , H01L2224/92157 , H01L2224/92246 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/83205 , H01L2224/37099
Abstract: 本发明的目的在于提供一种半导体装置。该半导体装置中，利用第1焊料（51）将第1引线（11）与MOS-FET（21）的下表面电极（23）进行接合，利用第2焊料（52）将MOS-FET的上表面电极（22）与内部引线（31）进行接合，利用第3焊料（53）将内部引线与第2引线的突起部（61）进行接合，并且第1引线、第2引线、MOS-FET以及内部引线通过密封树脂（41）来一体形成，在第1焊料的内部与第2焊料的内部设置支承构件（54）、（55），并通过自对准使内部引线与MOS-FET的位置稳定。
-
公开(公告)号：CN103503132B
公开(公告)日：2016-06-01
申请号：CN201180070578.9
申请日：2011-06-09
Applicant: 三菱电机株式会社
CPC classification number: H01L23/4952 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/115 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/06181 , H01L2224/29201 , H01L2224/29347 , H01L2224/29355 , H01L2224/30181 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40179 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83139 , H01L2224/8314 , H01L2224/83143 , H01L2224/83801 , H01L2224/83815 , H01L2224/84138 , H01L2224/84143 , H01L2224/84205 , H01L2224/84801 , H01L2224/85205 , H01L2224/92157 , H01L2224/92246 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/83205 , H01L2224/37099
Abstract: 本发明的目的在于提供一种半导体装置。该半导体装置中，利用第1焊料（51）将第1引线（11）与MOS-FET（21）的下表面电极（23）进行接合，利用第2焊料（52）将MOS-FET的上表面电极（22）与内部引线（31）进行接合，利用第3焊料（53）将内部引线与第2引线的突起部（61）进行接合，并且第1引线、第2引线、MOS-FET以及内部引线通过密封树脂（41）来一体形成，在第1焊料的内部与第2焊料的内部设置支承构件（54）、（55），并通过自对准使内部引线与MOS-FET的位置稳定。
-
公开(公告)号：US20130307130A1
公开(公告)日：2013-11-21
申请号：US13980997
申请日：2011-06-09
Applicant: Takuya Oga , Kazuyasu Sakamoto , Tsuyoshi Sugihara , Masaki Kato , Daisuke Nakashima , Tsuyoshi Jida , Gen Tada
Inventor： Takuya Oga , Kazuyasu Sakamoto , Tsuyoshi Sugihara , Masaki Kato , Daisuke Nakashima , Tsuyoshi Jida , Gen Tada
IPC: H01L23/495
CPC classification number: H01L23/4952 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/115 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/06181 , H01L2224/29201 , H01L2224/29347 , H01L2224/29355 , H01L2224/30181 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40179 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83139 , H01L2224/8314 , H01L2224/83143 , H01L2224/83801 , H01L2224/83815 , H01L2224/84138 , H01L2224/84143 , H01L2224/84205 , H01L2224/84801 , H01L2224/85205 , H01L2224/92157 , H01L2224/92246 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/83205 , H01L2224/37099
Abstract: A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.
Abstract translation: 提供一种半导体器件，其中第一引线（11）与第一焊料（51）与MOS-FET（21）的底部电极（23）接合，MOS-FET的顶部电极（22）为 与第二焊料（52）的内部引线（31）连接，内部引线与第三引线（53）与第二引线的突起（61）接合，并且第一引线，第二引线，MOS-FET和内部引线 引线使用密封树脂（41）整体模制，其中第一焊料和第二焊料分别包括位于其内的支撑部件（54）和（55），并且通过自对准来稳定内部引线和MOS-FET的位置。
-
公开(公告)号：US09401319B2
公开(公告)日：2016-07-26
申请号：US13980997
申请日：2011-06-09
Applicant: Takuya Oga , Kazuyasu Sakamoto , Tsuyoshi Sugihara , Masaki Kato , Daisuke Nakashima , Tsuyoshi Jida , Gen Tada
Inventor： Takuya Oga , Kazuyasu Sakamoto , Tsuyoshi Sugihara , Masaki Kato , Daisuke Nakashima , Tsuyoshi Jida , Gen Tada
IPC: H01L23/48 , H01L23/495 , H01L23/00 , H01L23/31 , H01L25/11
CPC classification number: H01L23/4952 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/115 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/06181 , H01L2224/29201 , H01L2224/29347 , H01L2224/29355 , H01L2224/30181 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40179 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83139 , H01L2224/8314 , H01L2224/83143 , H01L2224/83801 , H01L2224/83815 , H01L2224/84138 , H01L2224/84143 , H01L2224/84205 , H01L2224/84801 , H01L2224/85205 , H01L2224/92157 , H01L2224/92246 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/83205 , H01L2224/37099
Abstract: A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.
Abstract translation: 提供一种半导体器件，其中第一引线（11）与第一焊料（51）与MOS-FET（21）的底部电极（23）接合，MOS-FET的顶部电极（22）为 与第二焊料（52）的内部引线（31）连接，内部引线与第三引线（53）与第二引线的突起（61）接合，并且第一引线，第二引线，MOS-FET和内部引线 引线使用密封树脂（41）整体模制，其中第一焊料和第二焊料分别包括位于其内的支撑部件（54）和（55），并且通过自对准来稳定内部引线和MOS-FET的位置。
-
Patent Agency Ranking
公开(公告)号：EP2720263A1
公开(公告)日：2014-04-16
申请号：EP11867292.2
申请日：2011-06-09
Applicant: Mitsubishi Electric Corporation
Inventor： OGA Takuya , SAKAMOTO Kazuyasu , SUGIHARA Tsuyoshi , KATO Masaki , NAKASHIMA Daisuke , JIDA Tsuyoshi , TADA Gen
CPC classification number: H01L23/4952 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/115 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/06181 , H01L2224/29201 , H01L2224/29347 , H01L2224/29355 , H01L2224/30181 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40179 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83139 , H01L2224/8314 , H01L2224/83143 , H01L2224/83801 , H01L2224/83815 , H01L2224/84138 , H01L2224/84143 , H01L2224/84205 , H01L2224/84801 , H01L2224/85205 , H01L2224/92157 , H01L2224/92246 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/83205 , H01L2224/37099
Abstract: A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.
Abstract translation: 提供一种半导体器件，其中第一引线（11）与第一焊料（51）与MOS-FET（21）的底电极（23）接合，MOS-FET的顶电极（22） 内引线与第二引线与第三焊料（53）的突起（61）连接，并且第一引线，第二引线，MOS-FET和内部引线 引线是用密封树脂（41）整体模制的，其中第一焊料和第二焊料分别包括位于其内部的支撑部件（54）和（55），并且内部引线和MOS-FET的位置通过自对准而稳定。
-
公开(公告)号：EP2720263A4
公开(公告)日：2015-04-22
申请号：EP11867292
申请日：2011-06-09
Applicant: MITSUBISHI ELECTRIC CORP
Inventor： OGA TAKUYA , SAKAMOTO KAZUYASU , SUGIHARA TSUYOSHI , KATO MASAKI , NAKASHIMA DAISUKE , JIDA TSUYOSHI , TADA GEN
IPC: H01L23/48 , H01L23/495 , H01L25/07 , H01L25/18 , H01L29/78
CPC classification number: H01L23/4952 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/115 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/06181 , H01L2224/29201 , H01L2224/29347 , H01L2224/29355 , H01L2224/30181 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40179 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83139 , H01L2224/8314 , H01L2224/83143 , H01L2224/83801 , H01L2224/83815 , H01L2224/84138 , H01L2224/84143 , H01L2224/84205 , H01L2224/84801 , H01L2224/85205 , H01L2224/92157 , H01L2224/92246 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/83205 , H01L2224/37099
-
公开(公告)号：WO2012169044A1
公开(公告)日：2012-12-13
申请号：PCT/JP2011/063246
申请日：2011-06-09
CPC classification number: H01L23/4952 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/115 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/06181 , H01L2224/29201 , H01L2224/29347 , H01L2224/29355 , H01L2224/30181 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40179 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83139 , H01L2224/8314 , H01L2224/83143 , H01L2224/83801 , H01L2224/83815 , H01L2224/84138 , H01L2224/84143 , H01L2224/84205 , H01L2224/84801 , H01L2224/85205 , H01L2224/92157 , H01L2224/92246 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/83205 , H01L2224/37099
Abstract: 第１のリード（１１）とＭＯＳ－ＦＥＴ（２１）の下面電極（２３）が第１のはんだ（５１）で接合され、ＭＯＳ－ＦＥＴの上面電極（２２）と内部リード（３１）が第２のはんだ（５２）で接合され、内部リードと第２のリードの突起部（６１）が第３のはんだ（５３）で接合され、第1のリード、第２のリード、ＭＯＳ－ＦＥＴおよび内部リードが封止樹脂（４１）により一体に成形されている半導体装置において、第１のはんだの内部と第２のはんだ内部に位置する支持部材（５４）（５５）を設け、セルフアライメントにより内部リードとＭＯＳ－ＦＥＴの位置を安定させる。
Abstract translation: 提供了使用第一焊料（51）将第一引线（11）焊接到MOS-FET（21）的底部电极（23）的半导体器件，MOS-FET的顶部电极（22）被焊接 使用第二焊料（52）到内部引线（31），使用第三焊料（53）将内部引线焊接到第二引线的突起（61），并且第一引线，第二引线，MOS-FET和内部引线 引线使用密封树脂（41）一体成型，其中支撑构件（54,55）位于第一焊料内部和第二焊料内部，并且内部引线和MOS-FET的位置通过自 对准。
-
公开(公告)号：WO2017047289A1
公开(公告)日：2017-03-23
申请号：PCT/JP2016/073406
申请日：2016-08-09
Applicant: 富士電機株式会社
CPC classification number: H01L24/29 , B23K35/0244 , B23K35/025 , B23K35/26 , B23K35/262 , C22C13/02 , H01L23/053 , H01L2224/29201 , H01L2224/29211 , H01L2224/2922 , H01L2224/29238 , H01L2224/29239 , H01L2224/29247 , H01L2224/29255 , H01L2224/29272 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/014 , H01L2924/10272 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/3656 , H01L2924/00014 , H01L2924/00012
Abstract: 耐熱温度が高く、熱伝導特性が高温領域で変化しない鉛フリーはんだを提供する。Ｓｂを、５．０質量％を超えて１０．０質量％以下と、Ａｇを２．０～４．０質量％含有し、残部は、Ｓｎ及び不可避不純物からなるはんだ材、並びに半導体素子と、基板電極もしくはリードフレームとの間に、かかるはんだ材を含んでなる接合層を備える半導体装置。
Abstract translation: 提供一种在高温范围内保持不受影响的耐热温度和导热性高的无铅焊料。 本发明涉及：含有5.0质量％以上且10.0质量％以下的Sb和2.0〜4.0质量％Ag的焊料，其余部分为Sn和不可避免的杂质; 以及在半导体元件和基板电极或引线框架之间设置有包含焊料的接合层的半导体器件。
-
公开(公告)号：JPWO2017047289A1
公开(公告)日：2018-01-25
申请号：JP2017539776
申请日：2016-08-09
Applicant: 富士電機株式会社
CPC classification number: H01L24/29 , B23K35/0244 , B23K35/025 , B23K35/26 , B23K35/262 , C22C13/02 , H01L23/053 , H01L2224/29201 , H01L2224/29211 , H01L2224/2922 , H01L2224/29238 , H01L2224/29239 , H01L2224/29247 , H01L2224/29255 , H01L2224/29272 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/014 , H01L2924/10272 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/3656 , H01L2924/00014 , H01L2924/00012
Abstract: 耐熱温度が高く、熱伝導特性が高温領域で変化しない鉛フリーはんだを提供する。Sbを、5.0質量%を超えて10.0質量%以下と、Agを2.0〜4.0質量%含有し、残部は、Sn及び不可避不純物からなるはんだ材、並びに半導体素子と、基板電極もしくはリードフレームとの間に、かかるはんだ材を含んでなる接合層を備える半導体装置。
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.016 seconds)
