公开(公告)号：WO2022212333A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/022294

申请日：2022-03-29

Applicant: ALLEGRO MICROSYSTEMS, LLC

Inventor： MYERS, Charles ,  LEE, Adam

IPC: H03F3/08 ,  H04N5/33 ,  H03F3/45 ,  G01J1/44 ,  G01J2001/446 ,  G01J2001/448 ,  G01S17/894 ,  G01S7/4863 ,  H03F3/45376 ,  H03F3/45475 ,  H03F3/45632 ,  H03F3/45941 ,  H04N5/357 ,  H04N5/361 ,  H04N5/3651 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/37455 ,  H04N5/37457

Abstract: Methods and apparatus for processing information from a photodetector, such as a photodiode. Embodiments can provide power supply noise rejection, capture active and/or passive imaging data, and/or provide correction of non-uniform photo-detector and pixel gains. Some embodiments include a photodetector coupled to a differential transimpedance amplifier. Some embodiments include a damage threshold exceedance detection circuit to detect when the photodetector provides a photo-current input above a threshold.

公开(公告)号：WO2022015999A1

公开(公告)日：2022-01-20

申请号：PCT/US2021/041858

申请日：2021-07-15

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAKARIAN, Varoujan ,  ERICKSON, Blake W.

IPC: H01L21/66 ,  H01J37/32 ,  G01J1/0425 ,  G01J1/0492 ,  G01J1/44 ,  G01J2001/4453 ,  G01J2001/446 ,  G01N21/27 ,  G01N21/62 ,  G01N2201/0833 ,  G01N33/0009 ,  H01J2237/2445 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01L21/67253 ,  H01L22/26

Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasmaassisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more groups of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tube (PMT) array or based on photodoiodes (e.g., avalanche photodiodes (APDs)).

公开(公告)号：WO2022087240A2

公开(公告)日：2022-04-28

申请号：PCT/US2021/056013

申请日：2021-10-21

Applicant: QUANTUM-SI INCORPORATED

Inventor： WEBSTER, Eric, A., G. ,  REARICK, Todd ,  THURSTON, Thomas Raymond

IPC: G01N21/27 ,  G01N21/31 ,  G01N21/62 ,  G01N21/63 ,  G01N21/64 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00576 ,  B01J2219/00587 ,  B01J2219/00689 ,  B01J2219/00698 ,  C12Q1/68 ,  G01J1/44 ,  G01J2001/446 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14825

Abstract: Described herein are techniques that improve the collection and readout of charge carriers in an integrated circuit. Some aspects of the present disclosure relate to integrated circuits having pixels with a plurality of charge storage regions. Some aspects of the present disclosure relate to integrated circuits configured to substantially simultaneously collect and read out charge carriers, at least in part. Some aspects of the present disclosure relate to integrated circuits having a plurality of pixels configured to transfer charge carriers between charge storage regions within each pixel substantially at the same time. Some aspects of the present disclosure relate to integrated circuits having three or more sequentially coupled charge storage regions. Some aspects of the present disclosure relate to integrated circuits capable of increased charge transfer rates. Some aspects of the present disclosure relate to techniques for manufacturing and operating integrated circuits according to the other techniques described herein.

公开(公告)号：WO2021146959A1

公开(公告)日：2021-07-29

申请号：PCT/CN2020/073635

申请日：2020-01-21

Applicant: 杭州芯格微电子有限公司

Inventor： 闵丙日

IPC: G01J1/44 ,  G01J1/0295 ,  G01J1/0429 ,  G01J1/4204 ,  G01J2001/446 ,  G02B27/286

Abstract: 显示器（10,10'）下部的照度传感器（100,101），其包括：光选择层（200,201），具有通过从显示器（10,10'）的外部入射的外来光（20）生成的显示器圆偏光（22,22'）以及像素所生成的非偏光（30）前进的第一光路径以及第二光路径；以及光传感器（300），具有检测通过第一光路径后的光的第一受光部（310,310'）以及检测通过第二光路径后的光的第二受光部（320,320'），第一光路径使显示器圆偏光（22,22'）以及非偏光（30）都通过，第二光路径阻隔显示器圆偏光（22,22'）并使非偏光（30）通过。

公开(公告)号：WO2023014601A2

公开(公告)日：2023-02-09

申请号：PCT/US2022/038842

申请日：2022-07-29

Applicant: COGNEX CORPORATION

Inventor： FERNANDEZ-DORADO, Jose ,  NUNNINK, Laurens

IPC: G06K7/10 ,  G06K7/14 ,  B60Q1/02 ,  F21K9/23 ,  F21V23/00 ,  G06K7/12 ,  G02B7/02 ,  G02B7/08 ,  G01J1/44 ,  G01J2001/446 ,  G01S17/36 ,  G06K7/10732 ,  G06K7/10742 ,  G06K7/10752 ,  G06K7/10811 ,  G06K7/10831 ,  H04N23/51 ,  H04N23/55 ,  H04N23/56 ,  H04N23/71

Abstract: A multispectral light assembly for an illumination system includes a multispectral light source configured to generate a plurality of different wavelengths of light and a light pipe positioned in front of the multispectral light source and configured to provide color mixing for two or more of the plurality of different wavelengths. The multispectral light assembly also includes a diffusive surface on the light pipe and a projection lens positioned in front of the diffusive surface. A processor device may be in communication with the multispectral light assemblies and may be configured to control activation of the multispectral light source.