公开(公告)号：WO2021130155A1

公开(公告)日：2021-07-01

申请号：PCT/EP2020/087414

申请日：2020-12-21

Applicant: AMS SENSORS GERMANY GMBH

Inventor： SIESS, Gunter ,  BUSS, Markus ,  KOMMA, Julius ,  PLESS, Holger ,  JAZAYERIFAR, Mahmoud ,  BLIEM, Peter ,  LECHNER, Franz ,  EILMSTEINER, Gerhard ,  ROGER, Frederic

IPC: G01J1/04 ,  G01J1/42 ,  G02B5/20 ,  G01J1/0492 ,  G01J1/429 ,  G02B5/208

Abstract: An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

公开(公告)号：WO2022015999A1

公开(公告)日：2022-01-20

申请号：PCT/US2021/041858

申请日：2021-07-15

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAKARIAN, Varoujan ,  ERICKSON, Blake W.

IPC: H01L21/66 ,  H01J37/32 ,  G01J1/0425 ,  G01J1/0492 ,  G01J1/44 ,  G01J2001/4453 ,  G01J2001/446 ,  G01N21/27 ,  G01N21/62 ,  G01N2201/0833 ,  G01N33/0009 ,  H01J2237/2445 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01L21/67253 ,  H01L22/26

Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasmaassisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more groups of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tube (PMT) array or based on photodoiodes (e.g., avalanche photodiodes (APDs)).