Abstract:
A particle beam therapy system transports an ion beam emitted from an accelerator to one of a plurality of treatment rooms. When preparations for irradiation of the ion beam to patients in the plurality of treatment rooms are completed, irradiation ready signals are outputted from treatment (operator) consoles provided respectively in the treatment rooms. A first-come, first-served basis controller decides the sequence of introducing the ion beam to the treatment rooms based on the order in which the respective irradiation ready signals have been inputted. Beam paths for introducing the ion beam emitted from the accelerator to respective irradiation units in the treatment rooms are formed in accordance with the decided sequence.
Abstract:
By using a large area cathode, an electron source can be made that can irradiate a large area more uniformly and more efficiently than currently available devices. The electron emitter can be a carbon film cold cathode, a microtip or some other emitter. It can be patterned. The cathode can be assembled with electrodes for scanning the electron source.
Abstract:
A phosphor for a vacuum ultraviolet excited light emitting device, obtained by adding Eu or Tb as an activating agent to a substrate comprising a compound represented by the general formula M1M2M3O4, wherein M1 represents at least one elements selected from Na and Li, M2 represents at least one elements selected from Gd and Y, and M3 represents at least one elements selected from Ge and Si.
Abstract:
The present invention provides an increased degree of uniformity of radiation dose distribution for the interior of a diseased part. A particle beam therapy system includes a charged particle beam generation apparatus and an irradiation apparatus. An ion beam is generated by the charged particle beam generation apparatus. The irradiation apparatus exposes a diseased part to the generated ion beam. A scattering device, a range adjustment device, and a Bragg peak spreading device are installed upstream of a first scanning magnet and a second scanning magnet. The scattering device and the range adjustment device are combined together and moved along a beam axis, whereas the Bragg peak spreading device is moved independently along the beam axis. The scattering device moves to adjust the degree of ion beam scattering. The range adjustment device moves to adjust ion beam scatter changes caused by an absorber thickness adjustment. The Bragg peak spreading device moves to adjust ion beam scatter changes arising out of an SOBP device. These adjustments provide uniformity of radiation dose distribution for the diseased part.
Abstract:
An OLED display having an ambient contrast ratio greater than ten at an ambient illumination greater than 6,000 lux at an average power of 100 milliwatts per centimeter squared.
Abstract:
An exit window for an electron beam emitter through which electrons pass in an electron beam includes an exit window foil having an interior and an exterior surface. A corrosion resistant layer having high thermal conductivity is formed over the exterior surface of the exit window foil for resisting corrosion and increasing thermal conductivity.
Abstract:
A thermal processor having a contaminant removal system. The system includes a heated drum for heat developing exposed heat developable media which emit airborne contaminants during the development; a plurality of rollers located about a circumferential segment of the drum to hold an exposed media in contact with the drum; an enclosure for enclosing the heated drum and plurality of rollers, the enclosure including a first upper curved member spaced from and enclosing the rollers and the upper portion of the drum and a second lower curved member spaced from and enclosing the lower portion of the drum, the first and second curved members having first ends spaced from each other and defining a film entrance region, and further having second ends spaced from each other and defining a film exit region; wherein the first upper curved member includes a curved duct having a first opening above the rollers and a second opening configured to direct gaseous fluids away from the film exit from the drum. The system further includes a top condensation trap communicating with the second opening of the duct; a bottom condensation trap; and an air flow control system for drawing ambient air from outside the enclosure through the film entrance region, splitting the air flow into (a) a top flow stream which passes between the first member over the rollers, through the duct and through the top condensation trap where airborne contaminants are condensed and the air stream is cooled, and (b) a bottom flow stream which passes between the second member and the lower portion of the drum and through the bottom condensation trap where airborne contaminants are condensed and the bottom flow stream is cooled.
Abstract:
Methods, and materials made by the methods, are provided herein for treating materials with a particle beam processing device. According to one illustrative embodiment, a method for treating a material with a particle beam processing device is provided that includes: providing a particle beam generating assembly including at least one filament for creating a plurality of particles; applying an operating voltage greater than about 110 kV to the filament to create the plurality of particles; causing the plurality of particles to pass through a thin foil having a thickness of about 10 microns or less; and treating a material with the plurality of particles.
Abstract:
The present invention is directed to a particle beam processing apparatus that is smaller in size and operates at a higher efficiency, and also directed to an application of such apparatus to treat a coating on a substrate of a treatable material, such as for flexible packaging. The processing apparatus includes a particle beam generating assembly, a foil support assembly, and a processing assembly. In the particle beam generating assembly, electrons are generated and accelerated to pass through the foil support assembly. In the flexible packaging application, the substrate is fed to the processing apparatus operating at a low voltage, such as 110 kVolts or below, and is exposed to the accelerated electrons to treat the coating on the substrate.
Abstract:
By using a large area cathode, an electron source can be made that can irradiate a large area more uniformly and more efficiently than currently available devices. The electron emitter can be a carbon film cold cathode, a microtip or some other emitter. It can be patterned. The cathode can be assembled with electrodes for scanning the electron source.