公开(公告)号：US5162062A

公开(公告)日：1992-11-10

申请号：US725779

申请日：1991-06-17

Applicant: Alan F. Carroll ,  Marc H. Labranche

Inventor： Alan F. Carroll ,  Marc H. Labranche

IPC: H01L21/316 ,  H01L21/48 ,  H01L21/768 ,  H01L23/522 ,  H01L27/01 ,  H05K1/03 ,  H05K1/09 ,  H05K3/46

CPC classification number: H05K3/4667 ,  C03C3/07 ,  C03C3/072 ,  C03C3/142 ,  C03C8/10 ,  C03C8/14 ,  H01L21/4867 ,  H05K1/092 ,  H05K1/0306

Abstract: A method for making multilayer electronic circuits comprising the sequential steps of(1) applying to a substrate comprising a plurality of alternating dielectric and conductive layers a thick film dielectric paste containing a low-melting silicate glass;(2) applying to the dielectric paste layer a pattern of thick film conductor paste comprising finely divided particles of silver, an inorganic binder and a ruthenium- or rhodium-based sintering inhibitor, all dispersed in an organic medium; and(3) air cofiring the applied layers of thick film dielectric and conductive pastes.

公开(公告)号：US08628695B2

公开(公告)日：2014-01-14

申请号：US12425091

申请日：2009-04-16

Applicant: Kenneth Warren Hang ,  Marc H. Labranche ,  Barry Edward Taylor ,  Paul Douglas Vernooy

Inventor： Kenneth Warren Hang ,  Marc H. Labranche ,  Barry Edward Taylor ,  Paul Douglas Vernooy

IPC: H01B1/02 ,  H01B1/12 ,  B05D5/12 ,  H01C1/012

CPC classification number: H01C17/0654 ,  H01C7/003

Abstract: The invention relates to a surface-modified RuO2 conductive and a lead-free powdered glass material formulated to make a paste suitable for application to the manufacture of a thick film resistor material. The resistance range that is most suitable to this invention is a resistor having 10 kilo-ohms to 10 mega-ohms per square of sheet resistance. The resulting resistors have ±100 ppm/° C. TCRs.

Abstract translation: 本发明涉及一种表面改性的RuO 2导电材料和一种无铅粉末玻璃材料，其被配制成适于制造厚膜电阻材料的糊料。 最适合本发明的电阻范围是具有10千欧姆至10兆欧每平方米薄层电阻的电阻器。 所得电阻器具有±100 ppm /°C的TCR。

公开(公告)号：US08257619B2

公开(公告)日：2012-09-04

申请号：US12425048

申请日：2009-04-16

Applicant: Marc H. Labranche ,  Kenneth Warren Hang ,  Alfred T. Walker ,  Constance Wenger, legal representative ,  Yuko Ogata

Inventor： Marc H. Labranche ,  Kenneth Warren Hang ,  Alfred T. Walker ,  Yuko Ogata

IPC: H01B1/20 ,  C03C8/02 ,  H01C7/00

CPC classification number: C03C8/02 ,  C03C8/04 ,  C03C8/14 ,  C03C8/22 ,  H01B1/16 ,  H01C7/003 ,  H01C17/0654

Abstract: A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO2 conductive material; (b) an α-oxide selected from CuO, Na2O, K2O, Li2O and combinations thereof (c) a borosilicate glass composition having: (i) B2O3, (ii) SiO2, (iii) a δ-oxide selected from BaO, CaO, ZnO, SrO, MgO and combinations thereof, and optionally including any of (iv) P2O5, (v) ZrO2 and (vi) Al2O3. The CuO α-oxide and TiO2, Ta2O5, Nb2O5 β-oxide(s) and combinations thereof are present in the paste composition either separately, or in the borosilicate glass composition, or both. The Na2O, K2O, Li2O α-oxide(s) and combinations thereof are present in the borosilicate glass composition. TCR values in the range of +/−100 ppm/° C. and R values of 100 ohms to 10 mega-ohms per square are obtained by resistors made from the paste composition.

Abstract translation: 公开了一种基本上无铅的厚膜电阻膏组合物，其包括分散在有机载体中的电阻组合物。 电阻组合物包括（a）RuO 2导电材料; （b）选自CuO，Na2O，K2O，Li2O及其组合的α-氧化物及其组合（c）硼硅酸盐玻璃组合物，其具有：（i）B 2 O 3，（ii）SiO 2，（iii）选自BaO， ，ZnO，SrO，MgO及其组合，并且任选地包括（iv）P 2 O 5，（v）ZrO 2和（vi）Al 2 O 3中的任何一种。 CuOα-氧化物和TiO 2，Ta 2 O 5，Nb 2 O 5和/或它们的组合分别存在于糊料组合物中或在硼硅酸盐玻璃组合物中，或两者均存在。 Na 2 O，K 2 O，Li 2 O的α-氧化物及其组合存在于硼硅酸盐玻璃组合物中。 通过由糊剂组合物制成的电阻器，可获得+/- 100ppm /℃范围内的TCR值和100欧姆至10兆欧每平方厘米的R值。

公开(公告)号：US20120164314A1

公开(公告)日：2012-06-28

申请号：US13292642

申请日：2011-11-09

Applicant: Marc H. LaBranche ,  Kenneth Warren Hang

Inventor： Marc H. LaBranche ,  Kenneth Warren Hang

IPC: H01B1/16 ,  B05D5/12

CPC classification number: H01B1/22 ,  C03C3/062 ,  C03C3/064 ,  C03C3/066 ,  C03C8/14 ,  C03C8/16 ,  C03C8/18 ,  H01C17/06526 ,  H01C17/06533 ,  H05B3/12

Abstract: Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof.The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.

Abstract translation: 公开了厚膜电阻膏组合物和制备厚膜组合物的方法。 组合物包括分散在有机载体中的电阻组合物。 电阻组合物具有3至60重量％的RuO 2导电材料，5至75重量％的Ag导电材料，15至60重量％的玻璃料和任选的至多10重量％的氧化铜或其前体，以及最多20个 重量铋氧化物或其前体。 当印刷到干燥厚度并在750℃和950℃之间的温度下烧结时，电阻器组合物的电阻率达10至10,000毫欧/平方厘米，电阻率的热温度系数为1000ppm /℃或更高。 烧结的电阻组合物可以实现0.75至1.50之间的电阻厚度比（Rtr）值。

公开(公告)号：US20150203694A1

公开(公告)日：2015-07-23

申请号：US14598279

申请日：2015-01-16

Applicant: HOWARD DAVID GLICKSMAN ,  MARC H LABRANCHE ,  PATRICIA O. MARKHAM ,  ADELE AMELIA PLISCOTT

Inventor： HOWARD DAVID GLICKSMAN ,  MARC H LABRANCHE ,  PATRICIA O. MARKHAM ,  ADELE AMELIA PLISCOTT

IPC: C09D5/24 ,  C22B3/00 ,  B05D5/00 ,  B22F9/30 ,  B05D3/02

CPC classification number: C09D5/24 ,  B05D3/0254 ,  B05D5/00 ,  B22F1/0074 ,  B22F9/30 ,  B22F2999/00 ,  C22B11/04 ,  H01B1/02 ,  H01B1/22 ,  H01L21/4867 ,  H01L2924/0002 ,  H05K1/095 ,  H05K3/1291 ,  H05K2201/0209 ,  H05K2203/1126 ,  H05K2203/1131 ,  H01L2924/00 ,  B22F9/026

Abstract: The present invention is directed to a highly conductive, low sintering temperature platinum powder produced using an aerosol decomposition process with platinum (II) tetraamine diacetate as the precursor

Abstract translation: 本发明涉及一种使用气溶胶分解方法制备的高导电性，低烧结温度的铂粉末，其中四胺二胺作为前体铂（II）

公开(公告)号：US08617428B2

公开(公告)日：2013-12-31

申请号：US13292642

申请日：2011-11-09

Applicant: Marc H. LaBranche ,  Kenneth Warren Hang

Inventor： Marc H. LaBranche ,  Kenneth Warren Hang

IPC: H01B1/22 ,  B05D5/12 ,  H01C17/065

CPC classification number: H01B1/22 ,  C03C3/062 ,  C03C3/064 ,  C03C3/066 ,  C03C8/14 ,  C03C8/16 ,  C03C8/18 ,  H01C17/06526 ,  H01C17/06533 ,  H05B3/12

Abstract: Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof.The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.

Abstract translation: 公开了厚膜电阻膏组合物和制备厚膜组合物的方法。 组合物包括分散在有机载体中的电阻组合物。 电阻组合物具有3至60重量％的RuO 2导电材料，5至75重量％的Ag导电材料，15至60重量％的玻璃料和任选的至多10重量％的氧化铜或其前体，以及最多20个 重量铋氧化物或其前体。 当印刷到干燥厚度并在750℃和950℃之间的温度下烧结时，电阻器组合物的电阻率达10至10,000毫欧/平方厘米，电阻率的热温度系数为1000ppm /℃或更高。 烧结的电阻组合物可以实现0.75至1.50之间的电阻厚度比（Rtr）值。

公开(公告)号：US5518663A

公开(公告)日：1996-05-21

申请号：US350361

申请日：1994-12-06

Applicant: Marc H. LaBranche ,  Bradley J. Schickling ,  Barry E. Taylor

Inventor： Marc H. LaBranche ,  Bradley J. Schickling ,  Barry E. Taylor

IPC: C03C8/02 ,  C09D5/24 ,  C09J9/02 ,  C09J201/00 ,  C09J201/04 ,  H01B1/22 ,  H01C1/142 ,  H01G4/228 ,  H01L21/60 ,  H01R11/01 ,  H05K1/09 ,  H05K3/32 ,  H01B1/16

CPC classification number: H01G4/228 ,  C03C3/062 ,  C03C3/072 ,  C03C3/074 ,  C03C8/04 ,  C03C8/10 ,  C03C8/14 ,  C03C8/18 ,  C09D5/24 ,  C09J9/02 ,  C23C18/14 ,  H01C1/142 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H05K1/092 ,  H05K3/323 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29499 ,  H01L2224/83192 ,  H01L2224/8388 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K2201/10674 ,  H05K2203/107

Abstract: The invention is directed to a thick film conductor composition wherein such compositions have improved solderability and adhesion to substrates due to the addition of a crystalline material from the feldspar family.

Abstract translation: 本发明涉及一种厚膜导体组合物，其中由于从长石系列中加入结晶材料，其中这种组合物具有改进的可焊性和与基底的粘合性。

公开(公告)号：US08133413B2

公开(公告)日：2012-03-13

申请号：US12425742

申请日：2009-04-17

Applicant: Keiichiro Hayakawa ,  Jerome David Smith ,  Yuko Ogata ,  Marc H. Labranche ,  Kenneth Warren Hang

Inventor： Keiichiro Hayakawa ,  Jerome David Smith ,  Yuko Ogata ,  Marc H. Labranche ,  Kenneth Warren Hang

IPC: H01B1/22

CPC classification number: C03C8/02 ,  C03C8/04 ,  C03C8/14 ,  C03C8/22 ,  H01B1/16 ,  H01C7/003 ,  H01C17/0654

Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.

Abstract translation: 本发明涉及使用氧化钌和/或多元氧化钌作为导电组分并使用含Cu玻璃料的组合物。

公开(公告)号：US20110089381A1

公开(公告)日：2011-04-21

申请号：US12425048

申请日：2009-04-16

Applicant: Marc H. Labranche ,  Kenneth Warren Hang ,  Alfred T. Walker ,  Constance Wenger ,  Yuko Ogata

Inventor： Marc H. Labranche ,  Kenneth Warren Hang ,  Alfred T. Walker ,  Constance Wenger ,  Yuko Ogata

IPC: H01B1/22

CPC classification number: C03C8/02 ,  C03C8/04 ,  C03C8/14 ,  C03C8/22 ,  H01B1/16 ,  H01C7/003 ,  H01C17/0654

Abstract: A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO2 conductive material; (b) an α-oxide selected from CuO, Na2O, K2O, Li2O and combinations thereof (c) a borosilicate glass composition having: (i) B2O3, (ii) SiO2, (iii) a δ-oxide selected from BaO, CaO, ZnO, SrO, MgO and combinations thereof, and optionally including any of (iv) P2O5, (v) ZrO2 and (vi) Al2O3. The CuO α-oxide and TiO2, Ta2O5, Nb2O5 β-oxide(s) and combinations thereof are present in the paste composition either separately, or in the borosilicate glass composition, or both. The Na2O, K2O, Li2O α-oxide(s) and combinations thereof are present in the borosilicate glass composition. TCR values in the range of +/−100 ppm/° C. and R values of 100 ohms to 10 mega-ohms per square are obtained by resistors made from the paste composition.

Abstract translation: 公开了一种基本上无铅的厚膜电阻膏组合物，其包括分散在有机载体中的电阻组合物。 电阻组合物包括（a）RuO 2导电材料; （b）选自CuO，Na2O，K2O，Li2O及其组合的α-氧化物及其组合（c）硼硅酸盐玻璃组合物，其具有：（i）B 2 O 3，（ii）SiO 2，（iii）选自BaO， ，ZnO，SrO，MgO及其组合，并且任选地包括（iv）P 2 O 5，（v）ZrO 2和（vi）Al 2 O 3中的任何一种。 CuOα-氧化物和TiO 2，Ta 2 O 5，Nb 2 O 5和/或它们的组合分别存在于糊料组合物中或在硼硅酸盐玻璃组合物中，或两者均存在。 Na 2 O，K 2 O，Li 2 O的α-氧化物及其组合存在于硼硅酸盐玻璃组合物中。 通过由糊剂组合物制成的电阻器，可获得+/- 100ppm /℃范围内的TCR值和100欧姆至10兆欧每平方厘米的R值。

公开(公告)号：US20090261941A1

公开(公告)日：2009-10-22

申请号：US12425091

申请日：2009-04-16

Applicant: Kenneth Warren Hang ,  Marc H. Labranche ,  Barry Edward Taylor ,  Paul Douglas Vernooy

Inventor： Kenneth Warren Hang ,  Marc H. Labranche ,  Barry Edward Taylor ,  Paul Douglas Vernooy

IPC: H01C7/00 ,  H01B1/20 ,  B05D5/12

CPC classification number: H01C17/0654 ,  H01C7/003

Abstract: The invention relates to a surface-modified RuO2 conductive and a lead-free powdered glass material formulated to make a paste suitable for application to the manufacture of a thick film resistor material. The resistance range that is most suitable to this invention is a resistor having 10 kilo-ohms to 10 mega-ohms per square of sheet resistance. The resulting resistors have ±100 ppm/° C. TCRs.

Abstract translation: 本发明涉及一种表面改性的RuO 2导电材料和一种无铅粉末玻璃材料，其被配制成适于制造厚膜电阻材料的糊料。 最适合本发明的电阻范围是具有10千欧姆至10兆欧每平方米薄层电阻的电阻器。 所得电阻器具有±100 ppm /°C的TCR。