公开(公告)号：US20070004165A1

公开(公告)日：2007-01-04

申请号：US11319820

申请日：2005-12-28

Applicant: Hyo Shin ,  Soon Yoon ,  Eun Park ,  Soo Lyoo

Inventor： Hyo Shin ,  Soon Yoon ,  Eun Park ,  Soo Lyoo

IPC: H01L21/20

CPC classification number: H05K1/162 ,  H01G4/10 ,  H05K2201/0175 ,  H05K2201/0179

Abstract: The present invention relates to a thin layer capacitor including first and second metal electrode layers and a dielectric layer of BiZnNb-based amorphous metal oxide having a dielectric constant of at least 15, interposed between the metal layers, and a layered structure having the same. The layered structure includes a first metal electrode layer formed on a polymer-based composite substrate, a dielectric layer, formed on the first metal electrode layer, and made of BiZnNb-based metal oxide with a dielectric constant of at least 15, and a second metal electrode layer formed on the dielectric layer. The BiZnNb-based amorphous metal oxide in this invention has a high dielectric constant without a thermal treatment for crystallization, useful for fabrication of a thin layer capacitor of a polymer-based layered structure such as a PCB.

Abstract translation: 本发明涉及包括第一和第二金属电极层的薄层电容器和插入在金属层之间介电常数至少为15的BiZnNb基非晶态金属氧化物的电介质层和具有该介电层的层状结构。 层状结构包括形成在第一金属电极层上的由聚合物系复合基板形成的第一金属电极层，介电层，介电常数为15以上的BiZnNb系金属氧化物，第二金属电极层 形成在电介质层上的金属电极层。 本发明中的BiZnNb系非晶态金属氧化物具有高介电常数，而不需要进行结晶热处理，可用于制造基于聚合物的层状结构如PCB的薄层电容器。

公开(公告)号：US20070102741A1

公开(公告)日：2007-05-10

申请号：US11593088

申请日：2006-11-06

Applicant: Jin Moon ,  Yul Chung ,  Soo Lyoo ,  Seung Sohn

Inventor： Jin Moon ,  Yul Chung ,  Soo Lyoo ,  Seung Sohn

IPC: H01L29/94

CPC classification number: H05K1/162 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/417 ,  Y10T29/49124 ,  Y10T29/4913 ,  Y10T29/49155

Abstract: Disclosed herein is a printed circuit board with an embedded thin-film capacitor, and a method of manufacturing the same. Specifically, the present invention relates to a printed circuit board with an embedded thin-film capacitor, comprising a lower electrode formed on an insulating substrate; an amorphous paraelectric film formed on the lower electrode; a metal seed layer formed on the paraelectric film; and an upper electrode formed on the metal seed layer and having a surface roughness (Ra) of more than 300 nm; and a method of manufacturing a printed circuit board with an embedded thin-film capacitor, comprising forming a lower electrode on an insulating substrate; forming an amorphous paraelectric film on the lower electrode, using a low-temperature film formation process; forming a metal seed layer on the paraelectric film; and forming an upper electrode having a surface roughness (Ra) of more than 300 nm on the metal seed layer, using an electroplating method.

Abstract translation: 这里公开了具有嵌入式薄膜电容器的印刷电路板及其制造方法。 具体地说，本发明涉及一种具有嵌入式薄膜电容器的印刷电路板，包括形成在绝缘基板上的下电极; 形成在下电极上的非晶顺电膜; 形成在顺电膜上的金属种子层; 和形成在金属籽晶层上并具有大于300nm的表面粗糙度（Ra）的上电极; 以及制造具有嵌入式薄膜电容器的印刷电路板的方法，包括在绝缘基板上形成下电极; 使用低温成膜法在下电极上形成非晶顺电膜; 在顺电膜上形成金属种子层; 并且使用电镀方法在金属籽晶层上形成表面粗糙度（Ra）大于300nm的上电极。