公开(公告)号：US09553086B2

公开(公告)日：2017-01-24

申请号：US15191295

申请日：2016-06-23

Applicant: ABB Schweiz AG

Inventor： Liutauras Storasta ,  Chiara Corvasce ,  Manuel Le-Gallo ,  Munaf Rahimo

IPC: H01L29/74 ,  H01L27/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/739

CPC classification number: H01L27/0635 ,  H01L27/0727 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/1004 ,  H01L29/417 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7397

Abstract: A Reverse-conducting semiconductor device which comprises a freewheeling diode and an insulated gate bipolar transistor on a common wafer, part of which wafer forms a base layer of a first conductivity type with a first doping concentration and a base layer thickness. The insulated gate bipolar transistor comprises a collector side and an emitter side opposite the collector side of the wafer. A cathode layer of a first conductivity type with at least one first region and a anode layer of a second conductivity type with at least one second and pilot region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The Reverse-conducting-IGBT of the present application satisfies a number of specific geometrical rules.

Abstract translation: 一种反向导电半导体器件，其包括在公共晶片上的续流二极管和绝缘栅双极晶体管，其中的一部分晶片形成具有第一掺杂浓度和基底层厚度的第一导电类型的基极层。 绝缘栅双极晶体管包括与晶片的集电极侧相对的集电极侧和发射极侧。 具有至少一个第一区域的第一导电类型的阴极层和具有至少一个第二引导区域和第二导电区域的第二导电类型的阳极层交替地布置在集电极侧。 每个区域具有由区域边界包围的区域宽度的区域区域。 本申请的反向导通IGBT满足若干具体的几何规则。

公开(公告)号：US20160307888A1

公开(公告)日：2016-10-20

申请号：US15191295

申请日：2016-06-23

Applicant: ABB Schweiz AG

Inventor： Liutauras Storasta ,  Chiara Corvasce ,  Manuel Le-Gallo ,  Munaf Rahimo

IPC: H01L27/06 ,  H01L29/739 ,  H01L29/417 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L27/0635 ,  H01L27/0727 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/1004 ,  H01L29/417 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7397

Abstract: A Reverse-conducting semiconductor device which comprises a freewheeling diode and an insulated gate bipolar transistor on a common wafer, part of which wafer forms a base layer of a first conductivity type with a first doping concentration and a base layer thickness. The insulated gate bipolar transistor comprises a collector side and an emitter side opposite the collector side of the wafer. A cathode layer of a first conductivity type with at least one first region and a anode layer of a second conductivity type with at least one second and pilot region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The Reverse-conducting-IGBT of the present application satisfies a number of specific geometrical rules.

Abstract translation: 一种反向导电半导体器件，其包括在公共晶片上的续流二极管和绝缘栅双极晶体管，其中的一部分晶片形成具有第一掺杂浓度和基底层厚度的第一导电类型的基极层。 绝缘栅双极晶体管包括与晶片的集电极侧相对的集电极侧和发射极侧。 具有至少一个第一区域的第一导电类型的阴极层和具有至少一个第二引导区域和第二导电区域的第二导电类型的阳极层在集电极侧交替布置。 每个区域具有由区域边界包围的区域宽度的区域区域。 本申请的反向导通IGBT满足若干具体的几何规则。

公开(公告)号：US20170294526A1

公开(公告)日：2017-10-12

申请号：US15630491

申请日：2017-06-22

Applicant: ABB Schweiz AG

Inventor： Liutauras Storasta ,  Chiara Corvasce ,  Manuel Le Gallo ,  Munaf Rahimo ,  Arnost Kopta

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/78 ,  H01L29/40 ,  H01L29/36 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/7395 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/0865 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/402 ,  H01L29/7396 ,  H01L29/7811 ,  H01L29/7819 ,  H01L29/7823

Abstract: A reverse-conducting MOS device is provided having an active cell region and a termination region. Between a first and second main side. The active cell region comprises a plurality of MOS cells with a base layer of a second conductivity type. On the first main side a bar of the second conductivity type, which has a higher maximum doping concentration than the base layer, is arranged between the active cell region and the termination region, wherein the bar is electrically connected to the first main electrode. On the first main side in the termination region a variable-lateral-doping layer of the second conductivity type is arranged. A protection layer of the second conductivity type is arranged in the variable-lateral-doping layer, which protection layer has a higher maximum doping concentration than the maximum doping concentration of the variable-lateral-doping layer in a region attached to the protection layer.

公开(公告)号：US10164126B2

公开(公告)日：2018-12-25

申请号：US15861230

申请日：2018-01-03

Applicant: ABB Schweiz AG

Inventor： Andrei Mihaila ,  Munaf Rahimo ,  Renato Minamisawa ,  Lars Knoll ,  Liutauras Storasta

IPC: H01L29/06 ,  H01L29/872 ,  H01L29/08 ,  H01L29/16 ,  H01L29/20

Abstract: A semiconductor power rectifier with increased surge current capability is described. A semiconductor layer includes a drift layer having a first conductivity type, at least one pilot region having a second conductivity type different from the first conductivity type, a plurality of stripe-shaped emitter regions having the second conductivity type, and a transition region having the second conductivity type, wherein the at least one pilot region has in any lateral direction parallel to the first main side a width of at least 200 μm and is formed adjacent to the first main side to form a first p-n junction with the drift layer, each emitter region is formed adjacent to the first main side form a second p-n junction with the drift layer, and the transition region is formed adjacent to the first main side to form a third p-n junction with the drift layer.

公开(公告)号：US10109725B2

公开(公告)日：2018-10-23

申请号：US15630491

申请日：2017-06-22

Applicant: ABB Schweiz AG

Inventor： Liutauras Storasta ,  Chiara Corvasce ,  Manuel Le Gallo ,  Munaf Rahimo ,  Arnost Kopta

IPC: H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L29/40 ,  H01L29/08

Abstract: A reverse-conducting MOS device is provided having an active cell region and a termination region. Between a first and second main side. The active cell region comprises a plurality of MOS cells with a base layer of a second conductivity type. On the first main side a bar of the second conductivity type, which has a higher maximum doping concentration than the base layer, is arranged between the active cell region and the termination region, wherein the bar is electrically connected to the first main electrode. On the first main side in the termination region a variable-lateral-doping layer of the second conductivity type is arranged. A protection layer of the second conductivity type is arranged in the variable-lateral-doping layer, which protection layer has a higher maximum doping concentration than the maximum doping concentration of the variable-lateral-doping layer in a region attached to the protection layer.

公开(公告)号：US20180212071A1

公开(公告)日：2018-07-26

申请号：US15861230

申请日：2018-01-03

Applicant: ABB Schweiz AG

Inventor： Andrei Mihaila ,  Munaf Rahimo ,  Renato Minamisawa ,  Lars Knoll ,  Liutauras Storasta

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/1608 ,  H01L29/2003

Abstract: A semiconductor power rectifier with increased surge current capability is described, which has a semiconductor layer having a first main side and a second main side opposite to the first main side. The semiconductor layer includes a drift layer having a first conductivity type, at least one pilot region having a second conductivity type different from the first conductivity type, a plurality of stripe-shaped emitter regions having the second conductivity type, and a transition region having the second conductivity type, wherein the at least one pilot region has in any lateral direction parallel to the first main side a width of at least 200 μm and is formed adjacent to the first main side to form a first p-n junction with the drift layer, each emitter region is formed adjacent to the first main side form a second p-n junction with the drift layer, and the transition region is formed adjacent to the first main side to form a third p-n junction with the drift layer. The at least one pilot region is connected to the transition region by the plurality of stripe-shaped emitter regions.