Abstract:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Abstract:
An electronic component having a socketable bump grid array comprising shaped-solder coated metallic spheres is provided by a method which comprises positioning solder coated metal spheres in an aligning device having a plurality of openings corresponding to the array, the openings being tapered preferably in the form of a truncated cone with the base of the cone being at the upper surface of the aligning device and having a diameter larger than the diameter of the solder coated metal sphere. The opening is configured so that a sphere positioned in the opening extends partially above the upper surface of the aligning device. The pads of the substrate are then contacted with the positioned spheres and, when the solder is reflowed, the solder forms a bond between the conductive layer on the substrate in contact with the solder-coated metal sphere and takes the shape of the aligning device and which maintains a solder coating on the whole surface of the metal sphere. An apparatus is also provided for making such a socketable bump grid array.
Abstract:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Abstract:
A member having a shank is selectively coated with a material such as a metal by loosely sliding a washer made of a material such as a thermoplastic or thermosetting polymer onto the shank, securing the washer such that the washer is in intimate contact with the shank, and immersing at least a portion of the member into at least one coating bath so that a portion of the member is coated and the portion of the shank in contact with the washer is not coated. The member can be an input/output pin for an electronic device and the coating can be applied by methods such as electroless plating or electrolytic plating.
Abstract:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Abstract:
A thin film transfer join process in which a multilevel thin film structure is formed on a carrier, the multilevel thin film structure is joined to a final substrate and then the carrier is removed. Once the carrier is removed, the dielectric material and metallic material that were once joined to the carrier are now exposed. The dielectric material is then etched back so that the exposed metallic material protrudes beyond the dielectric material. Also disclosed is a module made by the foregoing process.
Abstract:
A member having a shank is selectively coated with a material such as a metal by loosely sliding a washer made of a material such as a thermoplastic or thermosetting polymer onto the shank, securing the washer such that the washer is in intimate contact with the shank, and immersing at least a portion of the member into at least one coating bath so that a portion of the member is coated and the portion of the shank in contact with the washer is not coated. The member can be an input/output pin for an electronic device and the coating can be applied by methods such as electroless plating or electrolytic plating.
Abstract:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN.
Abstract:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
Abstract:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.