公开(公告)号：US11177407B2

公开(公告)日：2021-11-16

申请号：US16821572

申请日：2020-03-17

Applicant: KANEKA CORPORATION

Inventor： Tooru Irie ,  Wataru Yoshida ,  Kunta Yoshikawa

IPC: H01L25/00 ,  H01L31/00 ,  H02N6/00 ,  H01L31/05 ,  H01L31/0224 ,  H01L31/18

Abstract: A method of manufacturing a back electrode type solar cell, may include forming by physical vapor deposition at least one layer of an electrode material film on both a first conductivity type semiconductor layer, to give a first electrode layer, and a second conductivity type semiconductor layer, to give a second electrode layer, and patterning the first electrode layer and the second electrode layer each in a strip-like shape such that the first electrode layer and the second electrode layer both extend in a first direction and are arranged in a second direction by removing a part of the electrode material film.

公开(公告)号：US20200220037A1

公开(公告)日：2020-07-09

申请号：US16821572

申请日：2020-03-17

Applicant: KANEKA CORPORATION

Inventor： Tooru Irie ,  Wataru Yoshida ,  Kunta Yoshikawa

IPC: H01L31/05 ,  H01L31/18 ,  H01L31/0224

Abstract: A method of manufacturing a back electrode type solar cell, may include forming by physical vapor deposition at least one layer of an electrode material film on both a first conductivity type semiconductor layer, to give a first electrode layer, and a second conductivity type semiconductor layer, to give a second electrode layer, and patterning the first electrode layer and the second electrode layer each in a strip-like shape such that the first electrode layer and the second electrode layer both extend in a first direction and are arranged in a second direction by removing a part of the electrode material film.

公开(公告)号：US20190189812A1

公开(公告)日：2019-06-20

申请号：US16282407

申请日：2019-02-22

Applicant: KANEKA CORPORATION

Inventor： Kunta Yoshikawa ,  Hayato Kawasaki ,  Wataru Yoshida

IPC: H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/022441 ,  H01L31/02013 ,  H01L31/0747 ,  Y02E10/50

Abstract: A solar cell includes a rectangular-shaped semiconductor substrate having a first principal surface and a second principal surface, and a metal electrode. The second principal surface includes a plurality of band-shaped first conductivity-type regions that comprise a first conductivity-type semiconductor layer and a plurality of band-shaped second conductivity-type regions that comprise a second conductivity-type semiconductor layer. The metal electrode may be disposed on the second principal surface, and no metal electrode may be provided on the first principal surface. The second conductivity-type semiconductor layer may have a conductivity-type different from that of the first conductivity-type semiconductor layer. The semiconductor substrate may include a first direction end portion region at both end portions of the semiconductor substrate in a first direction, and a first direction central region is present between the two first direction end portion regions.

公开(公告)号：US10333012B2

公开(公告)日：2019-06-25

申请号：US15560596

申请日：2016-01-22

Applicant: KANEKA CORPORATION

Inventor： Toshihiko Uto ,  Takashi Suezaki ,  Wataru Yoshida

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/0747

Abstract: The method for manufacturing a crystalline silicon substrate for a solar cell includes: forming a texture on the surface of a single-crystalline silicon substrate by bringing an alkali solution and the surface of the single-crystalline silicon substrate into contact with each other; bringing an acidic solution and the surface of the single-crystalline silicon substrate into contact with each other to perform an acid treatment thereon; and then by bringing ozone water and the surface of the single-crystalline silicon substrate into contact with each other to perform an ozone treatment thereon. One aspect of embodiment is that the acidic solution used for the acid treatment is hydrochloric acid. Another aspect of embodiment is that the ozone treatment is performed by immersing the single-crystalline silicon substrate into the ozone water bath.