公开(公告)号：US20250142864A1

公开(公告)日：2025-05-01

申请号：US18385067

申请日：2023-10-30

Applicant: STMicroelectronics International N.V.

Inventor： Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA ,  Giovanni GIORGINO ,  Aurore CONSTANT ,  Virgil GUILLON

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

Abstract: Methods, systems, and apparatuses for normally off HEMT are provided, including for in situ plasma treatment before Al2O3 deposition for improved on on-hydrogen-based resistance. An exemplary method may include providing a wafer comprising a AlGaN layer and a p-GaN layer; etching the p-GaN layer to form a p-GaN gate; depositing a first aluminum oxide layer over the p-GaN gate; depositing a silicon dioxide layer over the aluminum layer; etching the silicon dioxide layer and the aluminum oxide layer to expose a first portion of the AlGaN layer starting a first distance from the p-GaN gate; treating the first portion of the AlGaN layer with an in-situ hydrogen-based plasma treatment, wherein the in situ plasma treatment deactivates magnesium in the first portion of the AlGaN layer; and forming at least a first normally-off HEMT, wherein the gate of the normally-off HEMT is the first p-GaN gate.

公开(公告)号：US20250142862A1

公开(公告)日：2025-05-01

申请号：US18385137

申请日：2023-10-30

Applicant: STMicroelectronics International N.V.

Inventor： Giovanni GIORGINO ,  Maria Eloisa CASTAGNA ,  Virgil GUILLON ,  Cristina TRINGALI ,  Ferdinando IUCOLANO ,  Aurore CONSTANT

IPC: H01L29/778 ,  H01L21/02 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/20 ,  H01L29/66

Abstract: Methods, systems, and apparatuses for normally-on GaN high electron mobility transistors (HEMT) integration on monolithic p-GaN integrated circuits (ICs) platforms are provided. In particular, the integrated circuit platforms may include both enhancement mode and depletion mode HEMT power devices in monolithically integrated p-GaN power ICs. Exemplary methods may include treating at least one of a plurality of p-GaN gates with an in-situ plasma treatment to deactivate Mg in the p-GaN gate treated and deplete this p-Gan gate of Mg. The depleted p-GaN gate may be the gate for the normally on HEMT in the IC. At least one of the p-GaN gates not exposed to the in-situ plasma pretreatment may be the gate of the normally off HEMT in the IC.

公开(公告)号：US20240405115A1

公开(公告)日：2024-12-05

申请号：US18671584

申请日：2024-05-22

Applicant: STMicroelectronics International N.V.

Inventor： Maria Eloisa CASTAGNA ,  Giovanni GIORGINO ,  Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Aurore CONSTANT

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66

Abstract: A HEMT device including: a semiconductor body forming a heterostructure; a gate region on the semiconductor body and elongated along a first axis; a gate metal region including a lower portion on the gate region and recessed with respect to the gate region, and a upper portion on the lower portion and having a width greater that the lower portion along a second axis; a source metal region extending on the semiconductor body and made in part of aluminum; a drain metal region on the semiconductor body, the source metal region and the drain metal region on opposite sides of the gate region; a first conductivity enhancement region of aluminum nitride, extending on the semiconductor body and interposed between the source metal region and the gate region, the first conductivity enhancement region being in direct contact with the source metal region and being separated from the gate region.