公开(公告)号：US20250142862A1

公开(公告)日：2025-05-01

申请号：US18385137

申请日：2023-10-30

Applicant: STMicroelectronics International N.V.

Inventor： Giovanni GIORGINO ,  Maria Eloisa CASTAGNA ,  Virgil GUILLON ,  Cristina TRINGALI ,  Ferdinando IUCOLANO ,  Aurore CONSTANT

IPC: H01L29/778 ,  H01L21/02 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/20 ,  H01L29/66

Abstract: Methods, systems, and apparatuses for normally-on GaN high electron mobility transistors (HEMT) integration on monolithic p-GaN integrated circuits (ICs) platforms are provided. In particular, the integrated circuit platforms may include both enhancement mode and depletion mode HEMT power devices in monolithically integrated p-GaN power ICs. Exemplary methods may include treating at least one of a plurality of p-GaN gates with an in-situ plasma treatment to deactivate Mg in the p-GaN gate treated and deplete this p-Gan gate of Mg. The depleted p-GaN gate may be the gate for the normally on HEMT in the IC. At least one of the p-GaN gates not exposed to the in-situ plasma pretreatment may be the gate of the normally off HEMT in the IC.

公开(公告)号：US20250142865A1

公开(公告)日：2025-05-01

申请号：US18494401

申请日：2023-10-25

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Tariq WAKRIM ,  Ferdinando IUCOLANO

IPC: H01L29/778 ,  H01L21/265 ,  H01L21/266 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

Abstract: A process for forming a high electron mobility transistor (HEMT) includes forming a semiconductor heterostructure including a channel layer of the HEMT, forming a gate layer of GaN on the channel layer, and patterning the gate layer to form a first gate finger, a second gate finger, and a gate arc connecting the first gate finger and the second gate finger. The process includes forming an isolation mask covering an active region of the semiconductor heterostructure and the gate arc and performing an ion bombardment process on an inactive region of the semiconductor heterostructure exposed by the isolation mask.

公开(公告)号：US20240266425A1

公开(公告)日：2024-08-08

申请号：US18422867

申请日：2024-01-25

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/66462

Abstract: The present disclosure relates to a method of forming an HEMT transistor, comprising the following successive steps: a) providing a stack comprising a semiconductor channel layer, a semiconductor barrier layer on top of and in contact with the semiconductor channel layer, and a semiconductor gate layer arranged on top of and in contact with the semiconductor barrier layer, the semiconductor gate layer comprising P-type dopant elements; and b) compensating for the P-type doping with oxygen atoms, in an upper portion of the semiconductor gate layer, by an oxygen anneal, so as to define a PN junction at the interface between the upper portion and a central portion of the semiconductor gate layer.

公开(公告)号：US20240194763A1

公开(公告)日：2024-06-13

申请号：US18523185

申请日：2023-11-29

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Ferdinando IUCOLANO ,  Cristina TRINGALI

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786

Abstract: The present disclosure relates to a HEMT transistor comprising a first semiconductor layer, a gate arranged on a first surface of the first semiconductor layer, a first passivation layer made of a first material on the sides of the gate, the first passivation layer further extending over a first portion of said surface of the first semiconductor layer, and a second passivation layer made of a second material different from the first material on a second portion of said surface of the first semiconductor layer next to the first passivation layer.

公开(公告)号：US20240332413A1

公开(公告)日：2024-10-03

申请号：US18612646

申请日：2024-03-21

Applicant: STMicroelectronics International N.V.

Inventor： Ferdinando IUCOLANO ,  Alessandro CHINI ,  Maria Eloisa CASTAGNA ,  Aurore CONSTANT ,  Cristina TRINGALI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462

Abstract: The HEMT device has a body including a heterostructure configured to generate a 2-dimensional charge-carrier gas; and a gate structure which extends on a top surface of the body and is biasable to electrically control the 2-dimensional charge-carrier gas. The gate structure has a channel modulating region of semiconductor material; a functional region of semiconductor material; and a gate contact region of conductive material. The functional region and the gate contact region extend on a top surface of the channel modulating region and the gate contact region is arranged laterally with respect to the functional region. The channel modulating region has a different conductivity type with respect to the functional region.

公开(公告)号：US20240304713A1

公开(公告)日：2024-09-12

申请号：US18591344

申请日：2024-02-29

Applicant: STMicroelectronics International N.V.

Inventor： Ferdinando IUCOLANO ,  Aurore CONSTANT ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462

Abstract: An HEMT device is formed on a semiconductor body having a semiconductive heterostructure. A control region of a semiconductor material, is arranged on the semiconductor body and has a top surface and lateral sides. A control terminal, of conductive material, extends on and in contact with the top surface of the control region. A passivation layer of non-conductive material, extends on the semiconductor body, partially on the top surface of the control region and on the lateral sides of the control region, laterally and at a distance from the control terminal.

公开(公告)号：US20250142928A1

公开(公告)日：2025-05-01

申请号：US18497482

申请日：2023-10-30

Applicant: STMicroelectronics International N.V.

Inventor： Cristina TRINGALI ,  Alessandro CONTARINO ,  Raffaella PEZZUTO ,  Ferdinando IUCOLANO ,  Maria Eloisa CASTAGNA ,  Aurore CONSTANT

IPC: H01L29/417 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: Various embodiments of the present disclosure disclose improved gallium nitride (GaN) power devices and methods of fabrication of such devices. A method for fabricating a GaN device may include providing a semiconductor base material with a first and second side. The semiconductor base material includes a GaN material, a frontside barrier layer, and a backside barrier layer. A pGaN landing is formed on a first region of the semiconductor base material and an ohmic contact is formed on a second region of the semiconductor base material. The ohmic contact includes one or more via contact landing and one or more backside barrier contacts that make direct contact with the backside barrier layer.

公开(公告)号：US20240405115A1

公开(公告)日：2024-12-05

申请号：US18671584

申请日：2024-05-22

Applicant: STMicroelectronics International N.V.

Inventor： Maria Eloisa CASTAGNA ,  Giovanni GIORGINO ,  Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Aurore CONSTANT

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66

Abstract: A HEMT device including: a semiconductor body forming a heterostructure; a gate region on the semiconductor body and elongated along a first axis; a gate metal region including a lower portion on the gate region and recessed with respect to the gate region, and a upper portion on the lower portion and having a width greater that the lower portion along a second axis; a source metal region extending on the semiconductor body and made in part of aluminum; a drain metal region on the semiconductor body, the source metal region and the drain metal region on opposite sides of the gate region; a first conductivity enhancement region of aluminum nitride, extending on the semiconductor body and interposed between the source metal region and the gate region, the first conductivity enhancement region being in direct contact with the source metal region and being separated from the gate region.

公开(公告)号：US20240274702A1

公开(公告)日：2024-08-15

申请号：US18424471

申请日：2024-01-26

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462

Abstract: A HEMT transistor includes: a first semiconductor layer; a gate located on a first face of the first semiconductor layer; and a first passivating layer made of a first dielectric material which extends over the said first face of the first semiconductor layer, the sides of the gate, and at least a peripheral portion of a face of the gate opposite with respect to the first semiconductor layer, wherein a second passivating layer made of a second dielectric material extends between the said face of the gate and the first passivating layer, the sides of the gate being free of the said second passivating layer.

公开(公告)号：US20250142864A1

公开(公告)日：2025-05-01

申请号：US18385067

申请日：2023-10-30

Applicant: STMicroelectronics International N.V.

Inventor： Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA ,  Giovanni GIORGINO ,  Aurore CONSTANT ,  Virgil GUILLON

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

Abstract: Methods, systems, and apparatuses for normally off HEMT are provided, including for in situ plasma treatment before Al2O3 deposition for improved on on-hydrogen-based resistance. An exemplary method may include providing a wafer comprising a AlGaN layer and a p-GaN layer; etching the p-GaN layer to form a p-GaN gate; depositing a first aluminum oxide layer over the p-GaN gate; depositing a silicon dioxide layer over the aluminum layer; etching the silicon dioxide layer and the aluminum oxide layer to expose a first portion of the AlGaN layer starting a first distance from the p-GaN gate; treating the first portion of the AlGaN layer with an in-situ hydrogen-based plasma treatment, wherein the in situ plasma treatment deactivates magnesium in the first portion of the AlGaN layer; and forming at least a first normally-off HEMT, wherein the gate of the normally-off HEMT is the first p-GaN gate.