-
公开(公告)号：US09130531B1
公开(公告)日：2015-09-08
申请号：US14226897
申请日：2014-03-27
Inventor： Chun-wen Cheng , Chia-Hua Chu , Yi-Chuan Teng
CPC classification number: B81B7/0083 , B81B3/0081 , B81B7/0038 , B81B7/008 , B81C1/00238 , B81C1/00269 , B81C1/00285 , B81C2203/0771 , B81C2203/0792 , H01L25/0657 , H01L27/092 , H01L2924/0002 , H03H3/0073 , H01L2924/00
Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The MEMS wafer comprises a thermal insulator air gap formed between a sensing layer and a membrane. An ambient pressure chamber is formed between the CMOS wafer and the membrane of the MEMS wafer. The ambient pressure chamber is configured as a second thermal insulator air gap. The thermal insulator air gap and the second thermal insulator air gap protect portions of the semiconductor arrangement, such as the MEMS wafer, from heat originating from the CMOS wafer, which can otherwise damage such portions of the semiconductor arrangement. In some embodiments, one or more buffer layers are formed over the cap wafer as stress buffers.
Abstract translation: 除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。 半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。 MEMS晶片包括形成在感测层和膜之间的热绝缘体气隙。 在CMOS晶片和MEMS晶片的膜之间形成环境压力室。 环境压力室被配置为第二绝热体气隙。 热绝缘体气隙和第二绝热体气隙保护诸如MEMS晶片的半导体装置的部分免受来自CMOS晶片的热量，否则可能损坏半导体装置的这些部分。 在一些实施例中，一个或多个缓冲层作为应力缓冲器形成在帽晶片之上。
-
公开(公告)号：US20150274513A1
公开(公告)日：2015-10-01
申请号：US14226897
申请日：2014-03-27
Inventor： Chun-wen Cheng , Chia-Hua Chu , Yi-Chuan Teng
IPC: B81B7/00 , H01L25/065 , B81C1/00 , H01L27/092
CPC classification number: B81B7/0083 , B81B3/0081 , B81B7/0038 , B81B7/008 , B81C1/00238 , B81C1/00269 , B81C1/00285 , B81C2203/0771 , B81C2203/0792 , H01L25/0657 , H01L27/092 , H01L2924/0002 , H03H3/0073 , H01L2924/00
Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The MEMS wafer comprises a thermal insulator air gap formed between a sensing layer and a membrane. An ambient pressure chamber is formed between the CMOS wafer and the membrane of the MEMS wafer. The ambient pressure chamber is configured as a second thermal insulator air gap. The thermal insulator air gap and the second thermal insulator air gap protect portions of the semiconductor arrangement, such as the MEMS wafer, from heat originating from the CMOS wafer, which can otherwise damage such portions of the semiconductor arrangement. In some embodiments, one or more buffer layers are formed over the cap wafer as stress buffers.
Abstract translation: 除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。 半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。 MEMS晶片包括形成在感测层和膜之间的热绝缘体气隙。 在CMOS晶片和MEMS晶片的膜之间形成环境压力室。 环境压力室被配置为第二绝热体气隙。 热绝缘体气隙和第二绝热体气隙保护诸如MEMS晶片的半导体装置的部分免受来自CMOS晶片的热量，否则可能损坏半导体装置的这些部分。 在一些实施例中，一个或多个缓冲层作为应力缓冲器形成在帽晶片之上。
-
公开(公告)号：US20150125872A1
公开(公告)日：2015-05-07
申请号：US14069823
申请日：2013-11-01
Inventor： Tung-Tsun Chen , Jui-Cheng Huang , Chin-Hua Wen , Chun-wen Cheng , Yi-Shao Liu
IPC: G01N27/414 , C12Q1/68 , G01N33/543
CPC classification number: G01N27/4145 , G01N33/54373
Abstract: The present disclosure provides a device, such as a FET sensing cell, which includes a first dielectric layer over a substrate, an active layer over the first dielectric layer, a source region in the active layer, a drain region in the active layer, a channel region in the active layer situated between the source region and the drain region, a sensing film over the channel region, a second dielectric layer over the active layer, wherein an opening is formed in the second dielectric layer and the sensing film is located within the opening, a first electrode located within the second dielectric layer and a fluidic gate region located over the second dielectric layer and extending into the opening. The present disclosure also provides a method for improving the sensitivity of a device by adjusting a sensing value.
Abstract translation: 本公开提供了一种诸如FET感测单元的器件，其包括衬底上的第一介电层，第一介电层上的有源层，有源层中的源极区域，有源层中的漏极区域， 位于源极区域和漏极区域之间的有源层中的沟道区域，在沟道区域上的感测膜，在有源层上方的第二电介质层，其中在第二电介质层中形成开口，并且感测膜位于 所述开口，位于所述第二电介质层内的第一电极和位于所述第二介电层上并延伸到所述开口中的流体栅极区域。 本公开还提供了一种通过调整感测值来提高设备的灵敏度的方法。
-
Patent Agency Ranking
4.发明授权公开(公告)号：US11279611B2
公开(公告)日：2022-03-22
申请号：US16715131
申请日：2019-12-16
Inventor： Chun-wen Cheng , Chi-Hang Chin , Kuei-Sung Chang
Abstract: A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.
-
公开(公告)号：US11180363B2
公开(公告)日：2021-11-23
申请号：US16784451
申请日：2020-02-07
Inventor： Kuei-Sung Chang , Tai-Bang An , Chun-wen Cheng , Hung-Hua Lin
Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.
-
公开(公告)号：US09395326B2
公开(公告)日：2016-07-19
申请号：US14069823
申请日：2013-11-01
Inventor： Tung-Tsun Chen , Jui-Cheng Huang , Chin-Hua Wen , Chun-wen Cheng , Yi-Shao Liu
IPC: G01N27/414 , G01N33/543
CPC classification number: G01N27/4145 , G01N33/54373
Abstract: The present disclosure provides a device, such as a FET sensing cell, which includes a first dielectric layer over a substrate, an active layer over the first dielectric layer, a source region in the active layer, a drain region in the active layer, a channel region in the active layer situated between the source region and the drain region, a sensing film over the channel region, a second dielectric layer over the active layer, wherein an opening is formed in the second dielectric layer and the sensing film is located within the opening, a first electrode located within the second dielectric layer and a fluidic gate region located over the second dielectric layer and extending into the opening. The present disclosure also provides a method for improving the sensitivity of a device by adjusting a sensing value.
Abstract translation: 本公开提供了一种诸如FET感测单元的器件，其包括衬底上的第一介电层，第一介电层上的有源层，有源层中的源极区域，有源层中的漏极区域， 位于源极区域和漏极区域之间的有源层中的沟道区域，在沟道区域上的感测膜，在有源层上方的第二电介质层，其中在第二电介质层中形成开口，并且感测膜位于 所述开口，位于所述第二电介质层内的第一电极和位于所述第二介电层上并延伸到所述开口中的流体栅极区域。 本公开还提供了一种通过调整感测值来提高设备的灵敏度的方法。
-
7.发明授权公开(公告)号：US11970387B2
公开(公告)日：2024-04-30
申请号：US17699245
申请日：2022-03-21
Inventor： Chun-wen Cheng , Chi-Hang Chin , Kuei-Sung Chang
CPC classification number: B81B3/001 , B81C1/00968 , B81C2201/013
Abstract: A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.
-
公开(公告)号：US20210246014A1
公开(公告)日：2021-08-12
申请号：US16784451
申请日：2020-02-07
Inventor： Kuei-Sung Chang , Tai-Bang An , Chun-wen Cheng , Hung-Hua Lin
Abstract: A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.
-
-
-
-
-
-
-
Search Results
8
records
(took 0.016 seconds)
