公开(公告)号：US11952266B2

公开(公告)日：2024-04-09

申请号：US17066448

申请日：2020-10-08

Applicant: X-Celeprint Limited

Inventor： Pierluigi Rubino

IPC: B81C1/00

CPC classification number: B81C1/00039 ,  B81C1/00523 ,  B81C1/00555 ,  B81C2201/0105 ,  B81C2201/013

Abstract: A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

公开(公告)号：US20240109770A1

公开(公告)日：2024-04-04

申请号：US17936931

申请日：2022-09-30

Applicant: Knowles Electronics, LLC

Inventor： Peter V. Loeppert ,  Michael Pedersen

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0163 ,  B81B2203/0307 ,  B81C2201/013 ,  B81C2201/017

Abstract: A method of fabricating a die for a microelectromechanical systems (MEMS) microphone includes the steps of forming a diaphragm, etching a plurality of slots through the diaphragm to define a plurality of springs, releasing the diaphragm and the plurality of springs, wherein the plurality of springs relieves intrinsic stress of the diaphragm, and sealing the plurality of slots with sealing material, thereby disabling the springs.

公开(公告)号：US11906727B2

公开(公告)日：2024-02-20

申请号：US16761294

申请日：2018-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuya Sugimoto ,  Tomofumi Suzuki ,  Kyosuke Kotani ,  Yutaka Kuramoto ,  Daiki Suzuki

IPC: B81C1/00 ,  G02B26/10 ,  G02B7/182 ,  G02B26/08 ,  H02N1/00

CPC classification number: G02B26/0841 ,  B81C1/00555 ,  G02B7/1821 ,  G02B26/105 ,  H02N1/008 ,  B81B2201/042 ,  B81C2201/013 ,  B81C2201/0174 ,  B81C2201/0198

Abstract: A method for manufacturing an optical device includes: preparing a semiconductor substrate that includes a portion corresponding to a base, a movable unit, and an elastic support portion; forming a first resist layer in a region corresponding to the base on a surface of a first semiconductor layer which is opposite to an insulating layer; forming a depression in the first semiconductor layer by etching the first semiconductor layer using the first resist layer as a mask; forming a second resist layer in a region corresponding to a rib portion on a bottom surface of the depression, a side surface of the depression, and the surface of the first semiconductor layer which is opposite to the insulating layer; and forming the rib portion by etching the first semiconductor layer until reaching the insulating layer using the second resist layer as a mask.

公开(公告)号：US11905167B2

公开(公告)日：2024-02-20

申请号：US17932409

申请日：2022-09-15

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/02 ,  B81C1/00103 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/013 ,  H04R2201/003

Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

公开(公告)号：US20230406698A1

公开(公告)日：2023-12-21

申请号：US18333924

申请日：2023-06-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Altti TORKKELI ,  Jussi OKSANEN ,  Aarni HÄRKÖNEN ,  Juha LAHDENPERÄ

IPC: B81C3/00 ,  B81B7/02

CPC classification number: B81C3/001 ,  B81B7/02 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81B2207/094 ,  B81C2201/0147 ,  B81C2203/031 ,  B81C2201/013 ,  B81C2201/0156 ,  B81B2203/04

Abstract: A microelectromechanical element is provided with patterned regions of wafer material and glass material. The regions of glass material include at least a first glass region and a second glass region formed of a first glass material and a second glass material, respectively. The first glass material enables anodic bonding with the wafer material. An alkali metal content of the second glass material is less than an alkali metal content of the first glass material.

公开(公告)号：US11845401B2

公开(公告)日：2023-12-19

申请号：US17100344

申请日：2020-11-20

Applicant: HYUNDAI MOTOR COMPANY ,  KIA MOTORS CORPORATION ,  Korea Polytechnic University Industry Academic Cooperation Foundation

Inventor： Ji Hyun Woo ,  Chang-Kyu Kim

IPC: B60R25/40 ,  H02N1/08 ,  B81B3/00 ,  B81C1/00 ,  B60R25/24

CPC classification number: B60R25/406 ,  B60R25/24 ,  B81B3/0021 ,  B81C1/00166 ,  H02N1/08 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C2201/013

Abstract: A vehicle key capable of generating electrical energy by itself through energy harvesting, and a method of manufacturing the vehicle key are provided. The vehicle key includes a power generator including an energy generation module configured to generate electrical energy using energy harvesting and an electric condenser configured to store the generated electrical energy; an inputter configured to receive a user input; a communicator configured to communicate with the vehicle; and a controller configured to control the communicator to transmit a control signal corresponding to the received user input to the vehicle. At least one of the inputter, the communicator, and the controller may be configured to receive power from the power generator.

公开(公告)号：US20230375416A1

公开(公告)日：2023-11-23

申请号：US18228333

申请日：2023-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsai-Hao HUNG ,  Shih-Chi KUO

IPC: G01K7/32 ,  B81C1/00 ,  B81B3/00

CPC classification number: G01K7/32 ,  B81C1/00944 ,  B81B3/0008 ,  B81B2203/0136 ,  B81C2201/0105 ,  B81C2201/013 ,  B81C2201/0116 ,  B81B2201/0278 ,  B81B2203/04

Abstract: The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.

公开(公告)号：US20230365402A1

公开(公告)日：2023-11-16

申请号：US18354012

申请日：2023-07-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hang Chang ,  I-Shi Wang ,  Jen-Hao Liu

IPC: B81C1/00 ,  B81C3/00

CPC classification number: B81C1/00238 ,  B81C1/00269 ,  B81C1/00888 ,  B81C3/005 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2201/0146 ,  B81C2203/035

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

公开(公告)号：US20230249963A1

公开(公告)日：2023-08-10

申请号：US18304383

申请日：2023-04-21

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Ting-Jung Chen ,  Shih-Wei Lin

IPC: B81C1/00

CPC classification number: B81C1/00063 ,  B81C1/00523 ,  B81C1/00047 ,  B81C2201/013

Abstract: A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

公开(公告)号：US11693230B2

公开(公告)日：2023-07-04

申请号：US16762174

申请日：2018-09-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuya Sugimoto ,  Tomofumi Suzuki ,  Kyosuke Kotani

IPC: G02B26/08 ,  G02B7/182 ,  H02N1/00 ,  G02B26/10 ,  B81C1/00

CPC classification number: G02B26/0841 ,  B81C1/00555 ,  G02B7/1821 ,  G02B26/105 ,  H02N1/008 ,  B81B2201/042 ,  B81C2201/013 ,  B81C2201/0174 ,  B81C2201/0198

Abstract: In an optical device, when viewed from a first direction, first, second, third, and fourth movable comb electrodes are respectively disposed between a first support portion and a first end of a movable unit, between a second support portion and a second end of the movable unit, between a third support portion and the first end, and between a fourth support portion and the second end of the movable unit. The first and second support portions respectively include first and second rib portions formed so that the thickness of each of the first and second support portions becomes greater than the thickness of the first torsion bar. The third and fourth support portions respectively include third and fourth rib portions formed so that the thickness of each of the third and fourth support portions becomes greater than the thickness of the second torsion bar.