Superconducting field-programmable gate array

    公开(公告)号:US11936380B2

    公开(公告)日:2024-03-19

    申请号:US18118040

    申请日:2023-03-06

    Inventor: Faraz Najafi

    CPC classification number: H03K19/195 H03K19/17728 H03K19/17744 H03K19/17784

    Abstract: The various embodiments described herein include methods, devices, and systems for operating superconducting circuitry. In one aspect, a programmable circuit includes: (1) a superconducting component arranged in a multi-dimensional array of alternating narrow and wide portions, the superconducting component having an input terminal at a first end and an output terminal at a second end opposite of the first end; and (2) control circuitry coupled to the narrow portions of the superconducting component, the control circuitry configured to transition the narrow portions between superconducting and non-superconducting states. In some implementations, the superconducting component and the control circuitry are formed on different layers of the programmable circuit.

    TIME-BIN QUBIT CONVERTER
    92.
    发明公开

    公开(公告)号:US20230393447A1

    公开(公告)日:2023-12-07

    申请号:US18317025

    申请日:2023-05-12

    CPC classification number: G02F3/00 G06N10/40

    Abstract: A system includes a first photonic integrated circuit. The circuit includes a qubit encoder configured to receive a spatial-mode qubit and convert the spatial-mode qubit to a temporal-mode qubit and an optical interconnect configured to receive and transmit the temporal-mode qubit. The system further includes a second photonic integrated circuit, itself including a qubit decoder configured to receive the temporal-mode qubit and convert the temporal-mode qubit back into the spatial-mode qubit.

    EPITAXIAL STRONTIUM TITANATE ON SILICON
    93.
    发明公开

    公开(公告)号:US20230197443A1

    公开(公告)日:2023-06-22

    申请号:US18112395

    申请日:2023-02-21

    Inventor: Yong Liang

    Abstract: A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

    INTERFEROMETER FILTERS WITH COMPENSATION STRUCTURE

    公开(公告)号:US20230152515A1

    公开(公告)日:2023-05-18

    申请号:US17987741

    申请日:2022-11-15

    Abstract: A photonic switch includes a first waveguide including a first region extending between a first coupler section and a second coupler section and a second region extending between the second coupler section and a third coupler section. The photonic switch also includes a second waveguide including a first portion extending between the first coupler section and the second coupler section, the first portion including at least two first compensation sections each having a different waveguide width, and a second portion extending between the second coupler section and the third coupler section, the second portion including at least two second compensation sections each having a different waveguide width. The photonic switch further includes at least one variable phase-shifter disposed in at least one of the first waveguide or the second waveguide.

    PHOTONIC INTEGRATED CIRCUIT
    95.
    发明申请

    公开(公告)号:US20230123000A1

    公开(公告)日:2023-04-20

    申请号:US18082520

    申请日:2022-12-15

    Abstract: A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.

    Active photonic devices incorporating high dielectric constant materials

    公开(公告)号:US11624964B2

    公开(公告)日:2023-04-11

    申请号:US17326233

    申请日:2021-05-20

    Abstract: An optical switch structure includes a substrate, a first electrical contact, a first material having a first conductivity type electrically connected to the first electrical contact, a second material having a second conductivity type coupled to the first material, and a second electrical contact electrically connected to the second material. The optical switch structure also includes a waveguide structure disposed between the first electrical contact and the second electrical contact and comprising a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction and a first electro-optic coefficient and a waveguide cladding at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction and a second electro-optic. The first index of refraction is greater than the second index of refraction the first electro-optic coefficient is less than the second electro-optic coefficient

    OPTICAL SWITCHES BASED ON INDUCED OPTICAL LOSS

    公开(公告)号:US20230047258A1

    公开(公告)日:2023-02-16

    申请号:US17728890

    申请日:2022-04-25

    Abstract: An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a first portion having a first width and a second portion having a width different from the first width and located on the first portion. The first portion is located between a first doped region and a second doped region.

    Superconducting switch
    98.
    发明授权

    公开(公告)号:US11569816B1

    公开(公告)日:2023-01-31

    申请号:US16840182

    申请日:2020-04-03

    Abstract: The various embodiments described herein include methods, devices, and circuits for reducing switch transition time of superconductor switches. In some embodiments, an electrical circuit includes: (i) an input component configured to generate heat in response to an electrical input; and (ii) a first superconducting component thermally-coupled to the input component. The electrical circuit is configured such that, in the absence of the electrical input, at least a portion of the first superconducting component is maintained in a non-superconducting state in the absence of the electrical input; and, in response to the electrical input, the first superconducting component transitions to a superconducting state.

    BARIUM TITANATE FILMS HAVING REDUCED INTERFACIAL STRAIN

    公开(公告)号:US20230018940A1

    公开(公告)日:2023-01-19

    申请号:US17377131

    申请日:2021-07-15

    Abstract: In some embodiments method comprises depositing a ferroelectric layer on a top surface of a semiconductor wafer and forming one or more gaps in the ferroelectric layer. The one or more gaps can be formed on a repetitive spacing to relieve stresses between the ferroelectric layer and the semiconductor wafer. A first dielectric layer is deposited over the ferroelectric layer and the first dielectric layer is planarized to fill in the gaps. A second dielectric layer is formed between the ferroelectric layer and the semiconductor wafer. The second dielectric layer can be formed by annealing the wafer in an oxidizing atmosphere such that an upper portion of the semiconductor substrate forms an oxide layer between the semiconductor substrate and the ferroelectric layer.

    COUNTERPROPAGATING GENERALIZED MACH ZEHNDER INTERFEROMETER

    公开(公告)号:US20230010363A1

    公开(公告)日:2023-01-12

    申请号:US17858699

    申请日:2022-07-06

    Inventor: Hugo Cable

    Abstract: Photons can propagate concurrently in two different directions along optical paths in a generalized Mach Zehnder interferometer (GMZI). A counterpropagating GMZI can include a first set of input ports and a second set of input ports, a first set of output ports and a second set of output ports, and optical components interconnected to form a GMZI that can selectably establish a first optical path between one of the the first set of input ports and one of the first set of output ports and a second optical path between one of the second set of input ports and one of the second set of output ports. The first optical path and the second optical path can include an overlapping portion though which photons on the first and second optical paths propagate in opposing directions.

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