公开(公告)号：US09613822B2

公开(公告)日：2017-04-04

申请号：US14530153

申请日：2014-10-31

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32082 ,  H01J37/32357 ,  H01J2237/3341

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove an exposed silicon oxide portion faster than an exposed silicon nitride portion. The inclusion of the oxygen-containing precursor may suppress the silicon nitride etch rate and result in unprecedented silicon oxide etch selectivity.

公开(公告)号：US09553102B2

公开(公告)日：2017-01-24

申请号：US14463561

申请日：2014-08-19

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L27/115 ,  C23F4/00 ,  H01L21/28 ,  H01J37/32

CPC classification number: H01L27/11582 ,  C23F4/00 ,  H01J37/32357 ,  H01L21/28 ,  H01L21/32136 ,  H01L21/67225 ,  H01L27/11568

Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.

Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻钨的方法。 根据需要，蚀刻将垂直布置的钨板彼此电分离，例如在垂直闪存器件的制造中。 钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。 所述方法包括将电短路钨板暴露于在电容激发室等离子体区域中形成的远激发氟。 所述方法包括将钨板暴露于在感应激发的远程等离子体系统中形成的远程激发的氟。 在每个操作期间在基板处理区域中维持低电子温度以实现高蚀刻选择性。

公开(公告)号：US09520303B2

公开(公告)日：2016-12-13

申请号：US14460115

申请日：2014-08-14

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: C03C15/00 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching aluminum and aluminum layers from the surface of a substrate are described. The etch selectively removes aluminum materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon carbon nitride, silicon oxycarbide and/or silicon nitride. The methods include exposing aluminum materials (e.g. aluminum) to remotely-excited chlorine (Cl2) in a substrate processing region. A remote plasma is used to excite the chlorine and a low electron temperature is maintained in the substrate processing region to achieve high etch selectivity. Aluminum oxidation may be broken through using a chlorine-containing precursor or a bromine-containing precursor excited in a plasma or using no plasma-excitation, respectively.

Abstract translation: 描述了从基板的表面选择性地蚀刻铝和铝层的方法。 相对于含硅膜，例如硅，多晶硅，氧化硅，氮化硅，碳氧化硅和/或氮化硅，蚀刻选择性地除去铝材料。 这些方法包括将铝材料（例如铝）暴露于基板处理区域中的远程激发的氯（Cl2）。 使用远程等离子体来激发氯，并且在基板处理区域中保持低电子温度以实现高蚀刻选择性。 可以通过使用在等离子体中激发的或不使用等离子体激发的含氯前体或含溴前驱体来破坏铝的氧化。

公开(公告)号：US20160260619A1

公开(公告)日：2016-09-08

申请号：US15155596

申请日：2016-05-16

Applicant: Applied Materials, Inc.

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

IPC: H01L21/311 ,  H01J37/32 ,  C09K13/00 ,  H01L21/67

CPC classification number: H01L21/31116 ,  C09K13/00 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

Abstract: A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

公开(公告)号：US20160260588A1

公开(公告)日：2016-09-08

申请号：US15158396

申请日：2016-05-18

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Anchuan Wang

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137

Abstract: A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.

Abstract translation: 可调等离子体蚀刻工艺包括在包含NH 3和NF 3的源气体的受控流中产生等离子体以形成等离子体产物流，从而控制加入到等离子体产物流中的未活化NH 3的流动以形成蚀刻 气流; 以及通过调节源气体的受控流量和未活化的NH 3的流量中的至少一个来控​​制蚀刻气体流的压力，直到压力在所需压力的公差内。 通过蚀刻气流的多晶硅和二氧化硅中的至少一种的蚀刻速率可以通过改变源气体的受控流量与未活化NH 3的流量的比例来调节。

公开(公告)号：US09406523B2

公开(公告)日：2016-08-02

申请号：US14309625

申请日：2014-06-19

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Zihui Li ,  Nitin K. Ingle ,  Anchuan Wang ,  Shankar Venkataraman

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/70

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/70

Abstract: A method of etching doped silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the doped silicon oxide. The plasmas effluents react with the patterned heterogeneous structures to selectively remove doped silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻掺杂的氧化硅的方法，并且包括使用部分远程等离子体激发的气相蚀刻。 远程等离子体激发含氟前体，产生的等离子体流出物流入基板处理区域。 含氢前体，例如 水同时流入基板处理区域而没有等离子体激发。 将等离子体流出物与基板处理区域中的未喷射含氢前体结合，其中组合与掺杂的氧化硅反应。 等离子体流出物与图案化的异质结构反应以选择性地去除掺杂的氧化硅。

公开(公告)号：US09378969B2

公开(公告)日：2016-06-28

申请号：US14309364

申请日：2014-06-19

Applicant: Applied Materials, Inc.

Inventor： Ching-Mei Hsu ,  Nitin K. Ingle ,  Hiroshi Hamana ,  Anchuan Wang

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation. The remote plasma excites a fluorine-containing precursor and an oxygen-containing precursor, the plasma effluents created are flowed into a substrate processing region. The plasma effluents etch the carbon film more rapidly than silicon, silicon nitride, silicon carbide, silicon carbon nitride and silicon oxide.

Abstract translation: 描述了在图案化异质结构上蚀刻碳膜的方法，并且包括使用远程等离子体激发的气相蚀刻。 远程等离子体激发含氟前体和含氧前体，产生的等离子体流出物流入基板处理区域。 等离子体流出物比硅，氮化硅，碳化硅，氮化碳和氧化硅更快地蚀刻碳膜。

公开(公告)号：US20160181112A1

公开(公告)日：2016-06-23

申请号：US14581332

申请日：2014-12-23

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Ching-Mei Hsu ,  Zihui Li ,  Ludovic Godet ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01L21/265

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/32137 ,  H01L21/32155 ,  H01L21/3223

Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.

Abstract translation: 描述了在图案化衬底上各向异性地干蚀刻暴露的衬底材料的方法。 图案化衬底具有由例如含硅材料或含金属材料制成的单一材料形成的间隙。 该方法包括定向离子注入图案化结构以植入间隙的底部，而基本上不插入间隙的壁。 随后，使用含氟前体形成远程等离子体以蚀刻图案化衬底，使得（1）相对于间隙的底板选择性地蚀刻壁，或者（2）相对于壁选择性地蚀刻地板 的差距。 在没有离子注入的情况下，蚀刻操作将是各向同性的，这是由于在蚀刻过程期间等离子体激发的远程特性。

公开(公告)号：US20160086816A1

公开(公告)日：2016-03-24

申请号：US14543683

申请日：2014-11-17

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Mandar Pandit ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle ,  Jie Liu

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US09287134B2

公开(公告)日：2016-03-15

申请号：US14157724

申请日：2014-01-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Xikun Wang ,  Lin Xu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/033 ,  H01J37/32

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/0337

Abstract: Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于氧化硅，氮化硅和/或其它电介质来选择性地蚀刻氧化钛的方法。 所述方法包括使用由含氟前体和/或含氯前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钛反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钛，同时非常缓慢地除去其它暴露的材料。 在远程等离子体蚀刻之前执行方向溅射预处理，并且能够提高选择性以及方向选择性。 在一些实施方案中，钛氧化物蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。