公开(公告)号：US11822251B2

公开(公告)日：2023-11-21

申请号：US15019836

申请日：2016-02-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/38 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/325

Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a photoresist over a substrate. The photoresist includes an acid-labile group (ALG) connected to a polar unit. The method also includes exposing the photoresist to a radiation beam, baking the photoresist and performing a developing process to the photoresist.

公开(公告)号：US11822238B2

公开(公告)日：2023-11-21

申请号：US17121080

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/30 ,  G03F7/36

CPC classification number: G03F7/0042 ,  G03F7/0047 ,  G03F7/32 ,  G03F7/325 ,  G03F7/30 ,  G03F7/36

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US20230367216A1

公开(公告)日：2023-11-16

申请号：US18361402

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chih Chen ,  Ching-Yu Chang

IPC: G03F7/09 ,  G03F7/11 ,  G03F7/38 ,  C09D5/00 ,  G03F7/16 ,  C09D165/00 ,  G03F7/20 ,  G03F7/32 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/091 ,  G03F7/11 ,  G03F7/38 ,  C09D5/006 ,  G03F7/168 ,  C09D165/00 ,  G03F7/2006 ,  G03F7/2004 ,  G03F7/162 ,  G03F7/322 ,  G03F7/038 ,  G03F7/039

Abstract: A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.

公开(公告)号：US11694896B2

公开(公告)日：2023-07-04

申请号：US17019094

申请日：2020-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  An-Ren Zi ,  Ching-Yu Chang ,  Chen-Yu Liu

IPC: H01L21/027 ,  G03F7/00 ,  G03F7/11

CPC classification number: H01L21/0271 ,  G03F7/0025 ,  G03F7/11

Abstract: A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15 pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

公开(公告)号：US20230178379A1

公开(公告)日：2023-06-08

申请号：US17706152

申请日：2022-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ssu-Yu Ho ,  Szu-Ping Tung ,  Ching-Yu Chang

IPC: H01L21/47 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/47 ,  H01L21/0274 ,  H01L21/02263

Abstract: Embodiments utilize a photoetching process in forming a patterned target layer. After forming a patterned mandrel layer and spacer layer over the patterned mandrel layer, a bottom layer of a photomask is deposited using a chemical vapor deposition process to form an amorphous carbon film. An upper layer of the photomask is used to pattern the bottom layer to form openings for a reverse material. The reverse material is deposited in the openings of the bottom layer, the bottom layer providing both a mask and template function for the reverse material.

公开(公告)号：US11605538B2

公开(公告)日：2023-03-14

申请号：US16655089

申请日：2019-10-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  G03F7/038 ,  G03F1/22

Abstract: A method includes forming protective layer over substrate edge and photoresist over substrate. Protective layer removed and photoresist exposed to radiation. Protective layer made of composition including acid generator and polymer having pendant acid-labile groups. Pendant acid-labile groups include polar functional groups; acid-labile groups including polar switch functional groups; acid-labile groups, wherein greater than 5% of pendant acid-labile groups have structure wherein R1 is C6-C30 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, cycloalkyl carboxyl group, saturated or unsaturated hydrocarbon ring, or heterocyclic group; and R2 is C4-C9 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, or cycloalkyl carboxyl group; polymer having pendant acid-labile groups and lactone pendant groups; or polymer having pendant acid-labile groups and carboxylic acid groups.

公开(公告)号：US20230032703A1

公开(公告)日：2023-02-02

申请号：US17388209

申请日：2021-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chang ,  Jei Ming Chen ,  Tze-Liang Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768

Abstract: A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask. A target layer is patterned using the patterned mask layer as a mask.

公开(公告)号：US20220359190A1

公开(公告)日：2022-11-10

申请号：US17238458

申请日：2021-04-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jing Hong Huang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: H01L21/027 ,  H01L21/8238 ,  H01L21/3213 ,  H01L21/768 ,  G03F7/16

Abstract: Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned.

公开(公告)号：US11476108B2

公开(公告)日：2022-10-18

申请号：US16984070

申请日：2020-08-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jing Hong Huang ,  Ching-Yu Chang ,  Wei-Han Lai

IPC: H01L21/02

Abstract: A method of manufacturing a semiconductor device includes forming a spin on carbon layer comprising a spin on carbon composition over a semiconductor substrate. The spin on carbon layer is first heated at a first temperature to partially crosslink the spin on carbon layer. The spin on carbon layer is second heated at a second temperature to further crosslink the spin on carbon layer. An overlayer is formed over the spin on carbon layer. The second temperature is higher than the first temperature.

公开(公告)号：US11456170B2

公开(公告)日：2022-09-27

申请号：US16780791

申请日：2020-02-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: H01L21/02 ,  C11D1/72 ,  C11D1/66 ,  C11D1/02 ,  C11D11/00 ,  H01L21/308 ,  H01L21/027 ,  C11D3/43 ,  G03F7/30 ,  G03F7/16 ,  G03F7/42 ,  G03F7/20

Abstract: A cleaning solution includes a first solvent having Hansen solubility parameters 25>δd>13, 25>δp>3, and 30>δh>4; an acid having an acid dissociation constant, pKa, of −11 pKa>9.5; and a surfactant. The surfactant is one or more of an ionic surfactant, a polyethylene oxide and a polypropylene oxide, a non-ionic surfactant, and combinations thereof.