Abstract:
A semiconductor actuator includes a substrate base, a bending structure which is connected to the substrate base and can be deflected at least partially relative to the substrate base. The bending structure has semiconductor compounds on the basis of nitrides of main group III elements and at least two electrical supply contacts which impress an electrical current in or for applying an electrical voltage to the bending structure. At least two of the supply contacts are disposed at a spacing from each other respectively on the bending structure and/or integrated in the latter.
Abstract:
High-frequency circuit components are disclosed in which parasitic capacitance between a high-frequency circuit element and a substrate is reduced and mechanical strength is improved. An exemplary component has a conductive substrate, a coil as the high-frequency circuit-element, a mounting board including a thin dielectric film on which the coil is mounted, and a support board that couples the mounting board to the substrate. The mounting board is coupled so that it floats relative to the substrate as a result of deliberate warping of the support board.
Abstract:
A radio frequency (RF) micro electromechanical system (MEMS) switch formed on a substrate (e.g., a CMOS substrate). The RF MEMS switch includes a micromechanical member including a flexible switch membrane configured to move between an on state and an off state of the RF MEMS switch. The flexible switch membrane includes a first set of fingers on a sidewall thereof to be vertically coupled with a second set of fingers formed at an output of the RF MEMS switch on the substrate, and an actuation member in operable communication with the micromechanical member and configured to thermally actuate the micromechanical member such that the first set of fingers electrically couple with the second set of fingers upon thermal actuation of the micromechanical member to enable transmission of an RF signal.
Abstract:
Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material.
Abstract:
A micromechanical actuator includes a movable first spring element having metal and/or silicon. The first spring element is fitted at a first point and can move freely at a second point. A second spring element connected to the first spring element has silicon and is partially arranged on an electrically insulating material which is applied to a substrate. The second spring element is arranged at a distance from the substrate above the substrate on a first plane, and the first spring element is arranged above the second spring element on a second plane which is at a distance from the first plane such that the first and second spring elements can move with respect to the substrate. The actuator has a third spring element which is mechanically coupled to the first spring element. The elastic deformation of the second spring element can be induced by a length change of the third spring element.
Abstract:
The present invention discloses a capacitive MEMS switch on top of a semiconductor substrate containing a CMOS driving circuitry. The capacitive MEMS switch disclosed includes: 1) a semiconductor substrate containing a driving circuitry inside, and first and second conductors as well as a bottom electrode on top; 2) a suspended composite beam above and anchored onto the semiconductor substrate, containing a top electrode aligned to the bottom electrode with a first vertical distance, a top conductor, capped by a dielectric layer, having a first and second contact tips aligned with the first and second bottom conductors with a second vertical distance differentially smaller than the first vertical distance. The electrostatic attraction generated between the top electrode and the bottom electrode pulls the first and second contact tips in physical contact with and electrically connects the first and second bottom conductors through the top conductor.
Abstract:
An arbitrary three-dimensional shaped structure which is integrally formed with only carbon nanotubes having desired physical properties and electrical properties, and anisotropy, and a method for producing the same are disclosed. The carbon nanotube structure is constituted of a carbon nanotube aggregate comprising plural carbon nanotubes oriented in the same direction, wherein the carbon nanotube has weight density of 0.1 g/cm3 or more, the structure comprises a first part contacting a base, a second part separated from the base, and a curved third part which connects the first part and the second part, and orientation axes of at least a part of carbon nanotubes in the first part, the second part and the third part are continued.
Abstract translation:公开了与仅具有所需物理性能和电性能的碳纳米管一体形成的任意三维形结构,各向异性及其制造方法。 碳纳米管结构由包含沿相同方向取向的多个碳纳米管的碳纳米管集合体构成,其中碳纳米管具有0.1g / cm 3以上的重量密度,该结构包括与基底接触的第一部分,分离的第二部分 以及连接第一部分和第二部分的弯曲的第三部分和第一部分,第二部分和第三部分中的至少一部分碳纳米管的取向轴继续。
Abstract:
A micro-mechanical device includes a first piezoelectric actuator including a piezoelectric film, and lower and upper electrodes interleaving the piezoelectric film, and extending from a first fixing part on a substrate to a first operating end, and a second piezoelectric actuator connected to the first piezoelectric actuator via a connecting part at the first operating end of the first piezoelectric actuator, and extending from the connecting part to a second operating end, the second piezoelectric actuator being shorter than the first piezoelectric actuator.
Abstract:
A method for curing an epoxy-based photoresist uses a continuously varying temperature profile, to continuously raise the kinetic energy of the monomers involved in the curing process, allowing them to cross-link. By using the continuously varying temperature profile, the maximum temperature to achieve a more completely cured film is reduced, as is the total processing time. In addition, curing using the continuously varying temperature profile is a single step method, rather than a multi-step method of the prior art, significantly simplifying the process flow for producing the cured structures. The cured structures may have mechanical properties which render them suitable as functional elements of various MEMS devices, including rigid, dielectric tethers used in MEMS thermal switches, for example.
Abstract:
An electromechanical switch includes an actuation electrode, a cantilever electrode, a contact, a suspended conductor, and a signal line. The actuation electrode is mounted to a substrate, the cantilever electrode is suspended proximate to the actuation electrode, and the contact is mounted to the cantilever electrode. The suspended conductor is coupled to the contact and straddles a portion of the cantilever electrode. The signal line is positioned to form a closed circuit with the contact and the suspended conductor when an actuation voltage is applied between the actuation electrode and the cantilever electrode.