公开(公告)号：US08406404B2

公开(公告)日：2013-03-26

申请号：US11670863

申请日：2007-02-02

Applicant: Nhut Quan Tran ,  Karimkhan Remtoula

Inventor： Nhut Quan Tran ,  Karimkhan Remtoula

IPC: H04M3/42 ,  H04L12/16

CPC classification number: H04M3/56 ,  H04L65/1006 ,  H04M7/006 ,  H04M2203/5018

Abstract: This invention relates to a method for setting up a conference call in a telecommunications network using the SIP protocol to set up a communication between a first terminal (30) and a second terminal (32), call controllers (36ca30, 36ca32) relaying signals for this communication.According to the invention, such a method is characterized in that it comprises the following steps: the step to interrupt communication of the first terminal (30) with the second terminal (32) to set up a communication between this first terminal (30) and a conference bridge (38pc), the step to simulate the second terminal (32) maintaining its communication with the first terminal (30) using at least one of the call controllers (36ca30, 36ca32), and the step to simulate the second terminal (32) interrupting its communication with the first terminal (30) to set up a communication between this second terminal and the conference bridge (38pc).

Abstract translation: 本发明涉及一种在电信网络中使用SIP协议建立电话会议以在第一终端（30）和第二终端（32）之间建立通信的方法，呼叫控制器（36ca30,36ca32）中继信号 这个沟通。 根据本发明，这种方法的特征在于包括以下步骤：中断第一终端（30）与第二终端（32）的通信以建立该第一终端（30）和 会议桥（38pc），使用至少一个呼叫控制器（36ca30,36ca32）来模拟第二终端（32）保持与第一终端（30）的通信的步骤，以及模拟第二终端 32）中断与第一终端（30）的通信，以建立该第二终端与会议桥（38pc）之间的通信。

公开(公告)号：US07510907B2

公开(公告)日：2009-03-31

申请号：US11165465

申请日：2005-06-22

Applicant: John Heck ,  Qing Ma ,  Quan Tran ,  Tsung-Kuan Allen Chou ,  Semeon Altshuler ,  Boaz Weinfeld

Inventor： John Heck ,  Qing Ma ,  Quan Tran ,  Tsung-Kuan Allen Chou ,  Semeon Altshuler ,  Boaz Weinfeld

IPC: H01L21/44

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus and method of fabricating a through-wafer via. A first mask is formed over a first side of a first semiconductor die to define a first via area. A deep recess is etched through the first semiconductor die in the first via area and a blanket metal layer is formed over the first side including the deep recess. The blanket metal layer is removed from an outer surface of the first side of the first semiconductor die while retaining a portion of the blanket metal layer within the deep recess.

Abstract translation: 一种制造通晶片通孔的装置和方法。 第一掩模形成在第一半导体管芯的第一侧上以限定第一通孔区域。 通过第一通孔区域中的第一半导体管芯蚀刻深的凹部，并且在包括深凹部的第一侧上形成覆盖金属层。 将橡皮布金属层从第一半导体管芯的第一侧的外表面移除，同时将橡皮布金属层的一部分保持在深凹部内。

公开(公告)号：US20070200924A1

公开(公告)日：2007-08-30

申请号：US11670863

申请日：2007-02-02

Applicant: Nhut Quan Tran ,  Karimkhan Remtoula

Inventor： Nhut Quan Tran ,  Karimkhan Remtoula

IPC: H04N7/14

CPC classification number: H04M3/56 ,  H04L65/1006 ,  H04M7/006 ,  H04M2203/5018

Abstract: This invention relates to a method for setting up a conference call in a telecommunications network using the SIP protocol to set up a communication between a first terminal (30) and a second terminal (32), call controllers (36ca30, 36ca32) relaying signals for this communication.According to the invention, such a method is characterized in that it comprises the following steps: the step to interrupt communication of the first terminal (30) with the second terminal (32) to set up a communication between this first terminal (30) and a conference bridge (38pc), the step to simulate the second terminal (32) maintaining its communication with the first terminal (30) using at least one of the call controllers (36ca30, 36ca32), and the step to simulate the second terminal (32) interrupting its communication with the first terminal (30) to set up a communication between this second terminal and the conference bridge (38pc).

Abstract translation: 本发明涉及一种在电信网络中使用SIP协议建立电话会议以在第一终端（30）和第二终端（32）之间建立通信的方法，呼叫控制器（36） SUB>，36 ）中继信号。 根据本发明，这种方法的特征在于包括以下步骤：中断第一终端（30）与第二终端（32）的通信以建立该第一终端（30）和 会议桥（38 ），使用至少一个呼叫控制器（36> 30）来模拟第二终端（32）保持与第一终端（30）的通信的步骤， （323），以及模拟第二终端（32）中断其与第一终端（30）的通信以建立该第二终端与会议桥之间的通信的步骤（步骤 38＆lt; PC＆gt;）。

公开(公告)号：US20060289967A1

公开(公告)日：2006-12-28

申请号：US11165465

申请日：2005-06-22

Applicant: John Heck ,  Qing Ma ,  Quan Tran ,  Tsung-Kuan Chou ,  Semeon Altshuler ,  Boaz Weinfeld

Inventor： John Heck ,  Qing Ma ,  Quan Tran ,  Tsung-Kuan Chou ,  Semeon Altshuler ,  Boaz Weinfeld

IPC: H01L29/40 ,  H01L21/44

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus and method of fabricating a through-wafer via. A first mask is formed over a first side of a first semiconductor die to define a first via area. A deep recess is etched through the first semiconductor die in the first via area and a blanket metal layer is formed over the first side including the deep recess. The blanket metal layer is removed from an outer surface of the first side of the first semiconductor die while retaining a portion of the blanket metal layer within the deep recess.

公开(公告)号：US06914335B2

公开(公告)日：2005-07-05

申请号：US10038343

申请日：2002-01-02

Applicant: Ebrahim Andideh ,  Qing Ma ,  Quan Tran ,  Steve Towle

Inventor： Ebrahim Andideh ,  Qing Ma ,  Quan Tran ,  Steve Towle

IPC: H01L21/768 ,  H01L29/40

CPC classification number: H01L23/5329 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.

Abstract translation: 描述了改进的半导体器件。 该半导体器件包括形成在衬底上的具有低k介电常数的第一绝缘层，该第一绝缘层优选包含掺碳氧化物。 该器件还包括形成在第一层上的具有相对高的介电常数和优异的机械强度的第二层。 第二层优选在压应力下。 可以在第二层上形成第三层，其具有相对低的介电常数和相对较差的机械强度，并且可以在第三层上形成第四层，第三层具有相对高的介电常数和优异的机械强度。

公开(公告)号：US06673697B2

公开(公告)日：2004-01-06

申请号：US10114694

申请日：2002-04-03

Applicant: Qing Ma ,  Valluri Rao ,  Li-Peng Wang ,  John Heck ,  Quan Tran

Inventor： Qing Ma ,  Valluri Rao ,  Li-Peng Wang ,  John Heck ,  Quan Tran

IPC: H01L2130

CPC classification number: B81B7/0006 ,  B81C2203/0118 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A microelectromechanical system may be enclosed in a hermetic cavity defined by joined, first and second semiconductor structures. The joined structures may be sealed by a solder sealing ring, which extends completely around the cavity. One of the semiconductor structures may have the system formed thereon and an open area may be formed underneath said system. That open area may be formed from the underside of the structure and may be closed by covering with a suitable film in one embodiment.

公开(公告)号：US06487289B1

公开(公告)日：2002-11-26

申请号：US09442639

申请日：1999-11-18

Applicant: Cao Thanh Phan ,  Nhut Quan Tran

Inventor： Cao Thanh Phan ,  Nhut Quan Tran

IPC: H04M300

CPC classification number: H04Q3/66 ,  H04L45/12 ,  H04L45/302 ,  H04Q2213/1305 ,  H04Q2213/13056 ,  H04Q2213/13141 ,  H04Q2213/13148 ,  H04Q2213/13164 ,  H04Q2213/13176 ,  H04Q2213/13204 ,  H04Q2213/13209 ,  H04Q2213/13248 ,  H04Q2213/1325 ,  H04Q2213/13342 ,  H04Q2213/13349 ,  H04Q2213/1338 ,  H04Q2213/13384 ,  H04Q2213/13395 ,  H04Q2213/13396 ,  H04Q2213/13399

Abstract: In a method of routing a call in a network with a plurality of nodes connected by trunks, each call is assigned a priority level as a function of which it can pre-empt calls in the network. The cost of different routes for routing the call is calculated and one route is chosen as a function of the cost. The cost of a route is a function of the maximum value on the trunks constituting the route, the priority level of the calls pre-empted on each of the trunks, the number of calls pre-empted on the trunks and the resources available on the trunks. The priority level of existing calls can therefore be taken into account when routing a call. The single figure of the accompanying drawing shows the typical trend of the cost function of a trunk as a function of the available resources.

Abstract translation: 在具有通过中继线连接的多个节点的网络中路由呼叫的方法中，每个呼叫被分配优先级，作为可以在网络中预先呼叫的功能。 计算用于路由呼叫的不同路由的成本，并且根据成本选择一个路由。 路由的成本是构成路由的中继线的最大值，每个中继线上抢占的呼叫的优先级，在树干上抢先的呼叫数量以及可用的资源 树干 因此，在路由呼叫时可以考虑现有呼叫的优先级。 附图中的单个图示出了作为可用资源的函数的中继线的成本函数的典型趋势。

公开(公告)号：US20100295560A1

公开(公告)日：2010-11-25

申请号：US12242730

申请日：2008-09-30

Applicant: Quan Tran

Inventor： Quan Tran

IPC: G01R27/26 ,  G01R27/08

CPC classification number: G01R31/2648 ,  G01Q60/30 ,  G01Q80/00 ,  G11B9/04 ,  G11B9/14 ,  G11B9/149 ,  G11C13/0004 ,  G11C13/004 ,  G11C29/50 ,  H01L22/12

Abstract: A scanning impedance microscopy device maps out local impedance in a dielectric film sample. This may be used to detect conductive filaments in a dielectric film, to characterize semiconductor interfaces, and to be used a reading scheme for resistive change memory such as RRAM.

Abstract translation: 扫描阻抗显微镜装置映射电介质膜样品中的局部阻抗。 这可以用于检测电介质膜中的导电细丝，以表征半导体界面，并且用于诸如RRAM之类的电阻变化存储器的读取方案。

公开(公告)号：US20060001329A1

公开(公告)日：2006-01-05

申请号：US10882510

申请日：2004-06-30

Applicant: Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

Inventor： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

IPC: H01L41/08

CPC classification number: H03H9/02102 ,  H03H2009/02196

Abstract: A film bulk acoustic resonator (FBAR) comprises a piezoelectric film sandwiched between a top electrode and a bottom electrode. A temperature sensor is provided to sense a temperature to determine a temperature induced frequency drift for the FBAR. A voltage controller operatively connected to the temperature sensor supplies a direct current (DC) bias voltage to the FBAR to induce an opposite voltage induced frequency drift to compensate for the temperature induced frequency drift.

Abstract translation: 薄膜体声波谐振器（FBAR）包括夹在顶部电极和底部电极之间的压电薄膜。 提供温度传感器以感测温度以确定FBAR的温度感应频率漂移。 可操作地连接到温度传感器的电压控制器向FBAR提供直流（DC）偏置电压以引起相反的电压感应频率漂移以补偿温度引起的频率漂移。

公开(公告)号：US06667958B2

公开(公告)日：2003-12-23

申请号：US09362118

申请日：1999-07-28

Applicant: Cao Thanh Phan ,  Nhut Quan Tran

Inventor： Cao Thanh Phan ,  Nhut Quan Tran

IPC: H04L100

CPC classification number: H04Q3/622 ,  H04Q3/66

Abstract: In a method of routing calls to an external network from a calling node of a private network having a plurality of external network access circuit groups, each circuit group is connected to a gateway node of the private network. The method calculates a cost for different possible routes to the external network, the cost of a route to the external network being a function of the circuit group used and the route in the private network between the calling node and the gateway node of the circuit group used. It also chooses a route as a function of the calculated costs. The cost of a route to the external network is a decreasing function of the resources available on the circuit group used and is also a decreasing function of the load of the links used for routing in the private network. This optimizes use of the resources of the private network.

Abstract translation: 在从具有多个外部网络接入电路组的专用网络的主叫节点路由呼叫到外部网络的方法中，每个电路组连接到专用网络的网关节点。 该方法计算到外部网络的不同可能路由的成本，到外部网络的路由的成本是所使用的电路组的函数，以及主叫节点与电路组的网关节点之间的专用网络中的路由 用过的。 它还根据计算的成本选择一条路线。 到外部网络的路由的成本是所使用的电路组上可用资源的递减函数，并且也是专用网络中用于路由的链路负载的递减函数。 这样可以优化使用私有网络的资源。