公开(公告)号：US20050239231A1

公开(公告)日：2005-10-27

申请号：US10833203

申请日：2004-04-27

Applicant: James Przybyla ,  Arthur Piehl

Inventor： James Przybyla ,  Arthur Piehl

IPC: B81B3/00 ,  G11B5/48 ,  G11B21/16 ,  H01L21/00

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81B2203/0163 ,  B81C2201/0109 ,  B81C2201/053 ,  B81C2201/056

Abstract: A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the exposed portion of the flexure. The remaining flexure protection layer is removed after the flexure-engaging element is patterned and etched.

Abstract translation: 通过在位于衬底上的至少一个弯曲部分的一部分上建立挠曲保护层来制造微机电系统。 弯曲保护层被沉积成使得弯曲部分的一部分露出。 在挠曲接合元件和挠曲件的暴露部分之间建立接触。 在弯曲接合元件被图案化和蚀刻之后，剩余的挠曲保护层被去除。

公开(公告)号：US20050230257A1

公开(公告)日：2005-10-20

申请号：US11048298

申请日：2005-01-31

Applicant: Hubert Jerominek ,  Patrice Topart

Inventor： Hubert Jerominek ,  Patrice Topart

IPC: B81B3/00 ,  C25D1/00 ,  G02B26/08 ,  C25D1/06 ,  G01N9/30

CPC classification number: B81C1/00142 ,  B81B2201/042 ,  B81B2201/047 ,  B81C2201/0109 ,  B81C2201/053 ,  C25D1/003 ,  G02B26/0841

Abstract: A process for making a microdevice that includes the steps of providing a base member and selectively electroforming a support member for supporting a microplatform with respect to the base member. The process also includes the steps of selectively electroforming the microplatform and forming a flexible hinge member for hingedly connecting the microplatform to the support member and allowing relative movement of the microplatform with respect to the support member. This microdevice, when compared to prior art devices, can have improved mechanical strength, rigidity, low deformation, and high planarity.

Abstract translation: 一种用于制造微型装置的方法，包括以下步骤：提供基底构件并选择性地电铸相对于基底构件支撑微平台的支撑构件。 该方法还包括以下步骤：选择性地电铸微型平台并形成用于将微平台与支撑构件铰接连接并允许微平台相对于支撑构件相对运动的柔性铰链构件。 该微型装置与现有技术的装置相比可以具有改善的机械强度，刚性，低变形和高平面度。

公开(公告)号：US20040259330A1

公开(公告)日：2004-12-23

申请号：US10896042

申请日：2004-07-22

Inventor： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC: H01L021/44

CPC classification number: H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

Abstract translation: 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US06583031B2

公开(公告)日：2003-06-24

申请号：US09915217

申请日：2001-07-25

Applicant: Chuang-Chia Lin

Inventor： Chuang-Chia Lin

IPC: H01L2130

CPC classification number: G02B6/3518 ,  B81B3/004 ,  B81B2201/045 ,  B81B2203/058 ,  B81C2201/053 ,  G02B6/3514 ,  G02B6/3546 ,  G02B6/3566 ,  G02B6/357 ,  G02B6/3572 ,  G02B6/358

Abstract: A microelectromechanical systems (MEMS) element, MEMS optical switch and MEMS fabrication method are described. The MEMS element comprises a crystalline and moveable element is moveably attached to the substrate. The moveable element includes a perpendicular portion oriented substantially perpendicular to a plane of the substrate. The crystal structure of the perpendicular portion and substrate are substantially similar. The moveable element moveable is moveably attached to the substrate for motion substantially constrained to a plane oriented substantially perpendicular to a plane of the substrate. In at least one position, a part of a perpendicular portion of the moveable element projects beyond a surface of the substrate. The moveable element may be retained in place by a latch. The perpendicular portion may be formed substantially perpendicular portion to the substrate. An array of such structures can be implemented to work as an optical switch. The optical switch may comprise a crystalline substrate and one or more moveable elements moveably attached to the substrate. The MEMS elements may be fabricated by providing a substrate; forming one or more trenches in the substrate to define a perpendicular portion of a element; and moveably attaching the moveable element to a first surface of the substrate; removing a portion of the substrate such that at least a part of the perpendicular portion projects beyond a second surface of the substrate. The various embodiments provide for a robust and reliable MEMS elements that may be simply fabricated and densely packed.

Abstract translation: 描述了微机电系统（MEMS）元件，MEMS光开关和MEMS制造方法。 MEMS元件包括可移动地附接到基底的结晶和可移动元件。 可移动元件包括垂直于基本垂直于基底平面的垂直部分。 垂直部分和基底的晶体结构基本相似。 可移动的可移动元件可移动地附接到基板，用于基本上约束到基本上垂直于基板的平面定向的平面的运动。 在至少一个位置中，可移动元件的垂直部分的一部分突出超过衬底的表面。 可移动元件可以通过闩锁保持在适当的位置。 垂直部分可以形成为基本上垂直于基底的部分。 可以实现这种结构的阵列以用作光学开关。 光学开关可以包括结晶衬底和可移动地附接到衬底的一个或多个可移动元件。 可以通过提供衬底来制造MEMS元件; 在所述衬底中形成一个或多个沟槽以限定元件的垂直部分; 以及将所述可移动元件可移动地附接到所述基板的第一表面; 去除所述基底的一部分，使得所述垂直部分的至少一部分突出超过所述基底的第二表面。 各种实施例提供了可以简单地制造和密集包装的鲁棒且可靠的MEMS元件。

公开(公告)号：US20030087468A1

公开(公告)日：2003-05-08

申请号：US09986107

申请日：2001-11-07

Applicant: XEROX CORPORATION

Inventor： Peter M. Gulvin ,  Elliott A. Eklund ,  Joel A. Kubby

IPC: H01L021/00

CPC classification number: B81C1/00476 ,  B81B2203/0127 ,  B81C2201/053

Abstract: A structure for a micro-device is fabricated by forming: a first layer of sacrificial material, a layer of structural material over the first sacrificial material layer, a second layer of sacrificial material over the structural material layer and a protective layer over the second sacrificial material layer. A release etch is used to remove the first and second sacrificial material layers at approximately the same rate. A structural feature may also be fabricated by forming: a first layer of a first material; a layer of structural material over the first layer of the first material; at least one cut in the structural material layer; and, a first layer of a sacrificial material, different from the first material, over the structural material layer such that an interface is created between the first layer of the sacrificial material and the first layer of the first material at the at least one cut.

Abstract translation: 通过在第一牺牲材料层上形成第一牺牲材料层，结构材料层，在结构材料层上形成第二牺牲材料层，在第二牺牲层上形成保护层，制成微器件结构 材料层。 使用释放蚀刻以大致相同的速率去除第一和第二牺牲材料层。 还可以通过形成第一材料的第一层来制造结构特征; 在第一材料的第一层上方的结构材料层; 在结构材料层中至少有一个切口; 以及在所述结构材料层上方的与所述第一材料不同的牺牲材料的第一层，使得在所述牺牲材料的第一层和所述至少一个切口处的所述第一材料的所述第一层之间形成界面。

公开(公告)号：US20020142508A1

公开(公告)日：2002-10-03

申请号：US10071576

申请日：2002-02-08

Applicant: EM Microelectronic-Marin SA

Inventor： Ulrich Munch

IPC: H01L021/00 ,  H01L021/28 ,  H01L021/44 ,  H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC classification number: B81C1/00801 ,  B81C2201/053 ,  B81C2203/0735 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/00014

Abstract: The present invention concerns the field of microstructures and in particular microstructures made via CMOS technology on semiconductor substrates intended to undergo micro-machining by wet chemical etching, in particular by a KOH etchant. According to the present invention, protection against the KOH reactive agent is provided to such a structure by the deposition of a metal film (40, 41, 43) including at least on external gold layer (43) on the surface of the structure. This metal film (40, 41, 43) advantageously allows the use of mechanical protective equipment to be omitted and thus allows the wafers to be processed in batches. The present invention also proves perfectly compatible with a standard gold bumping process.

Abstract translation: 本发明涉及通过CMOS技术在半导体衬底上制造的微结构，特别是通过湿式化学蚀刻进行微加工的微结构，特别是通过KOH蚀刻剂。 根据本发明，通过在结构的表面上沉积至少包含在外部金层（43）上的金属膜（40,41,43），向这种结构提供对KOH反应剂的保护。 该金属膜（40,41,43）有利地允许省略使用机械保护装置，从而允许批量处理晶片。 本发明也证明与标准金碰撞过程完全兼容。

公开(公告)号：US06429506B1

公开(公告)日：2002-08-06

申请号：US09525514

申请日：2000-03-15

Applicant: Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

Inventor： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC: H01L21301

CPC classification number: H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

Abstract translation: 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US06423563B2

公开(公告)日：2002-07-23

申请号：US09861535

申请日：2001-05-22

Applicant: Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

Inventor： Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

IPC: H01L2984

CPC classification number: B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

Abstract: A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.

Abstract translation: 半导体动态量传感器包括具有等于或小于3OMEGA cm的电阻率的半导体支撑衬底。 绝缘膜设置在支撑基板上，半导体层设置在支撑基板上，绝缘膜位于支撑基板之间。 半导体层的电阻率等于或小于3OMEGA cm。 可移动电极设置在半导体层中，以根据作用于其的动态量而移位。 在半导体层中固定设置固定电极，与可动电极和可动电极的电容器形成特定的间隙。 电容器具有响应于可动电极的位移而变化以检测动态量的容量。

公开(公告)号：US20020093076A1

公开(公告)日：2002-07-18

申请号：US10091497

申请日：2002-03-07

Inventor： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC: H01L021/44 ,  H01L023/544 ,  H01L021/78

CPC classification number: H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

Abstract translation: 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US20020017660A1

公开(公告)日：2002-02-14

申请号：US09874382

申请日：2001-06-04

Inventor： Flavio Villa ,  Ubaldo Mastromatteo ,  Gabriele Barlocchi ,  Mauro Cattaneo

IPC: H01L027/148

CPC classification number: B81C1/00119 ,  B01J19/0093 ,  B01L3/5027 ,  B01L3/502707 ,  B01L7/52 ,  B01L7/525 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/1827 ,  B01L2300/185 ,  B01L2300/1883 ,  B81B2201/0214 ,  B81B2201/051 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/053

Abstract: The microreactor is completely integrated and is formed by a semiconductor body having a surface and housing at least one buried channel accessible from the surface of the semiconductor body through two trenches. A heating element extends above the surface over the channel and a resist region extends above the heating element and defines an inlet reservoir and an outlet reservoir. The reservoirs are connected to the trenches and have, in cross-section, a larger area than the trenches. The outlet reservoir has a larger area than the inlet reservoir. A sensing electrode extends above the surface and inside the outlet reservoir.

Abstract translation: 微反应器是完全集成的，并且由具有表面的半导体主体形成，并且容纳至少一个通过两个沟槽从半导体主体表面接近的掩埋通道。 加热元件在通道之上延伸到表面之上，并且抗蚀剂区域在加热元件上方延伸并且限定入口储存器和出口储存器。 储存器连接到沟槽，并且在横截面中具有比沟槽更大的面积。 出口储存器具有比入口储存器更大的面积。 感测电极在表面和出口储存器的内部延伸。