公开(公告)号：US12117630B2

公开(公告)日：2024-10-15

申请号：US17437729

申请日：2020-03-11

Applicant: Magic Leap, Inc.

Inventor： Mauro Melli ,  Christophe Peroz ,  Melanie Maputol West

IPC: G02B5/18 ,  F21V8/00 ,  G02B27/01

CPC classification number: G02B5/1857 ,  G02B6/0016 ,  G02B27/0172 ,  B81C2201/0132

Abstract: The present disclosure generally relates to display systems, and more particularly to augmented reality display systems and methods of fabricating the same. A method of fabricating a display device includes providing a substrate comprising a lithium (Li)-based oxide and forming an etch mask pattern exposing regions of the substrate. The method additionally includes plasma etching the exposed regions of the substrate using a gas mixture comprising CHF3 to form a diffractive optical element, wherein the diffractive optical element comprises Li-based oxide features configured to diffract visible light incident thereon.

公开(公告)号：US20240339125A1

公开(公告)日：2024-10-10

申请号：US18750002

申请日：2024-06-21

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

CPC classification number: G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a thickness; and ion beam milling the layer of the template material to remove thickness less than the first thickness. The ion beam milling may be performed at a two different angles during two different repetitions. At least one of the angles is a channeling angle defined relative to a crystalline microstructure of the template material. After the repetitions, additional material may be deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

公开(公告)号：US20240336474A1

公开(公告)日：2024-10-10

申请号：US18298311

申请日：2023-04-10

Applicant: AAC Technologies Pte. Ltd.

Inventor： Houming Chong ,  Veronica Tan ,  Zaixiang Pua ,  Kahkeen Lai ,  Zhan Zhan

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5733 ,  G01C19/5769

CPC classification number: B81B3/0037 ,  B81C1/00166 ,  G01C19/5733 ,  G01C19/5769 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C2201/0105 ,  B81C2201/0132 ,  B81C2203/0109

Abstract: A MEMS device and a method for manufacturing the MEMS device are provided. The MEMS device includes a cap sheet and a device sheet. The device sheet includes a silicon substrate, at least two device structure layers, and at least one conductive structure layer, and each two adjacent device structure layers are coupled via a corresponding conductive structure layer. The device sheet defines a functional cavity having a first region, a second region, and a third region. The at least two device structure layers and the at least one conductive structure layer each are across the first region, the second region, and the third region, and the at least two device structure layers and the at least one conductive structure layer cooperatively form a first movable structure in the first region, define an anchor point in the second region, and form a second movable structure in the third region.

公开(公告)号：US20240246812A1

公开(公告)日：2024-07-25

申请号：US18564996

申请日：2022-06-22

Applicant: UNIVERSITY OF WASHINGTON

Inventor： Bo Zhang ,  Todd Anderson ,  Chris McAllister

IPC: B81C1/00 ,  B81B7/00 ,  C03C15/00 ,  C03C17/22 ,  C03C17/245 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  G01N33/487

CPC classification number: B81C1/00341 ,  B81B7/00 ,  C03C15/00 ,  C03C17/225 ,  C03C17/245 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  G01N33/48721 ,  B81B2203/0127 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/019 ,  C03C2218/152 ,  C03C2218/153 ,  C03C2218/32

Abstract: An ultrathin free-standing solid state membrane, including an etched well on a glass wafer, and a layer of SiX deposited on a backside of the etched well on the glass wafer.

公开(公告)号：US20240199415A1

公开(公告)日：2024-06-20

申请号：US18084811

申请日：2022-12-20

Applicant: STMicroelectronics International N.V.

Inventor： Federico VERCESI ,  Andrea NOMELLINI ,  Paolo FERRARI

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00285 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81B2207/07 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0178 ,  B81C2203/0118

Abstract: Disclosed herein is a process flow for forming a MEMS IMU including an accelerometer and a gyroscope each located in a separate sealed cavity maintained at a different pressure. Formation of the MEMS IMU includes the use of a first vHF release to etch a sacrificial layer underneath a structural layer containing the accelerometer and gyroscope and capping the device under formation to set both cavities at a first pressure. The floor of one of the cavities is formed to including a gas permeable layer. Formation further includes forming a chimney underneath the gas permeable layer and then performing a second vHF release to etch through the gas permeable layer and expose the cavity containing the gas permeable layer so that its pressure may be set to be different than that of the other cavity when the chimney is sealed.

公开(公告)号：US20240182297A1

公开(公告)日：2024-06-06

申请号：US18519897

申请日：2023-11-27

Applicant: Infineon Technologies AG

Inventor： Hutomo Suryo Wasisto ,  Fabian Streb ,  Sebastian Anzinger ,  Marc Füldner ,  Dominic Maier

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00285 ,  B81B7/0029 ,  B81B2201/0257 ,  B81C2201/0132 ,  H04R1/023 ,  H04R2201/003 ,  H04R2201/029

Abstract: A method for manufacturing a micromechanical environmental barrier chip includes providing a substrate having a first surface and an opposite second surface, depositing a material layer having a different etch characteristic than the substrate onto the first surface, creating a microstructured micromechanical environmental barrier structure on top of the material layer by applying a microstructuring process, applying an anisotropic etching process comprising at least one etching step for anisotropically etching from the second surface towards the first surface to create at least a cavity underneath the micromechanical environmental barrier structure, the cavity extending between the second surface and the material layer, and removing the material layer underneath the micromechanical environmental barrier structure to expose the environmental barrier structure.

公开(公告)号：US20240109769A1

公开(公告)日：2024-04-04

申请号：US18538503

申请日：2023-12-13

Applicant: Xintec Inc.

Inventor： Wei-Luen SUEN ,  Jiun-Yen LAI ,  Hsing-Lung SHEN ,  Tsang-Yu LIU

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0067 ,  B81C1/00317 ,  B81B2203/0353 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0194

Abstract: A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.

公开(公告)号：US20240092632A1

公开(公告)日：2024-03-21

申请号：US18464759

申请日：2023-09-11

Applicant: ROHM CO., LTD.

Inventor： Martin Wilfried HELLER ,  Daisuke KAMINISHI

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0056 ,  B81C1/0019 ,  B81B2203/019 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C2201/0132

Abstract: The present disclosure provides a MEMS device. The MEMS device includes: a substrate; a recess, disposed in the substrate; a movable portion, hollowly supported in the recess; and an isolation joint, inserted into a predetermined position of the movable portion and electrically insulating both sides of the movable portion. A shortest distance between a bottom of the recess and the movable portion is less than a distance between the bottom of the recess and the isolation joint.

公开(公告)号：US20240034616A1

公开(公告)日：2024-02-01

申请号：US18258547

申请日：2021-12-17

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Laurent MOLLARD ,  Stéphane NICOLAS ,  Damien SAINT-PATRICE

IPC: B81B3/00 ,  G02B26/08 ,  B81C1/00

CPC classification number: B81B3/0051 ,  G02B26/0858 ,  B81C1/00341 ,  B81B2201/042 ,  B81B2203/0127 ,  B81C2201/0132

Abstract: The invention relates to an electromechanical microsystem comprising an electromechanical transducer, a deformable membrane and a cavity hermetically containing a deformable medium, preserving a constant volume under the action of an external pressure change. The deformable membrane forms a wall of the cavity and has at least one free zone being deformed. The electromechanical transducer is configured, such that its movement is a function of said external pressure change, and conversely. The free zone engages with an external member, such that its deformation induces, or is induced by, a movement of the external member. The electromechanical microsystem is thus capable of moving the external member or of capturing a movement of this member.

公开(公告)号：US20240017989A1

公开(公告)日：2024-01-18

申请号：US18348664

申请日：2023-07-07

Applicant: ROHM CO., LTD.

Inventor： Martin Wilfried HELLER

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00166 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/0177 ,  B81C2201/019 ,  B81C2201/0178

Abstract: A MEMS device includes a substrate which has a first main surface and a second main surface facing the first main surface, and in which a silicon substrate, a silicon carbide layer having conductivity, and a silicon layer are sequentially stacked from a second main surface side toward a first main surface side, a cavity recessed over the silicon layer, the silicon carbide layer, and the silicon substrate from the first main surface of the substrate to the second main surface side of the substrate, a MEMS electrode which is arranged in the cavity, is composed of the silicon layer and the silicon carbide layer, and is spaced apart from a bottom surface of the cavity to the first main surface side, and an isolation joint which divides the MEMS electrode in a plan view and mechanically connects and electrically isolates both sides of the divided MEMS electrode.