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公开(公告)号：US12044568B2
公开(公告)日：2024-07-23
申请号：US17851398
申请日：2022-06-28
Applicant: CANON KABUSHIKI KAISHA
Inventor： Yasuharu Ota , Yukihiro Kuroda
IPC: G01J1/44 , G05D1/00 , H04N25/709 , H04N25/75 , H04N25/76
CPC classification number: G01J1/44 , G05D1/0246 , H04N25/709 , H04N25/75 , H04N25/76 , G01J2001/442 , G01J2001/4466
Abstract: A photoelectric conversion device includes an avalanche multiplying photodiode, a signal generation unit that includes a control unit configured to control an applied voltage to the photodiode and generates a photon detection pulse based on an output generated by incidence of a photon to the photodiode, and a counter that counts the photon detection pulse output from the signal generation unit, and the counter outputs a setting value detection signal when a count value of the photon detection pulse reaches a predetermined setting value, and in response to receiving the setting value detection signal, the control unit controls the applied voltage to the photodiode so as to stop generation of an avalanche current in the photodiode.
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公开(公告)号：US11982565B2
公开(公告)日：2024-05-14
申请号：US17170563
申请日：2021-02-08
Inventor： François Ayel
IPC: G01J1/44
CPC classification number: G01J1/44 , G01J2001/442 , G01J2001/4466
Abstract: The present disclosure concerns a SPAD photodiode control circuit, including: a first current source; a current mirror including an input transistor in series with the first current source and an output transistor in series with the SPAD photodiode and a second current source in series with the input transistor of the current mirror and in parallel with the first current source, the second current source being alternately controllable to a so-called inactive state where it delivers no current and to a so-called active state where it delivers a non-zero current which adds, in the input transistor of the current mirror, to a current delivered by the first current source.
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公开(公告)号：US20240133738A1
公开(公告)日：2024-04-25
申请号：US18401990
申请日：2024-01-02
Inventor： Thomas FRACH , Torsten SOLF , Dennis GROBEN
CPC classification number: G01J1/44 , H03K5/2463 , H03K5/26 , G01J2001/4406 , G01J2001/4466
Abstract: The present application relates generally to silicon photomultiplier (SiPM) detector arrays. In one aspect, there is a system including an array of cells each including a single-photon avalanche diode (SPAD) reverse-biased above a breakdown voltage of the SPAD. The system may further include a trigger network configured to generate pulses on a trigger line in response to SPADs of the array undergoing breakdown. The system may still further include a pulse-width filter configured to block pulses on the trigger line whose pulse width is less than a threshold width.
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94.发明授权公开(公告)号：US11927480B2
公开(公告)日：2024-03-12
申请号：US18148290
申请日：2022-12-29
Applicant: Shanghai Lingfang Technology Co., Ltd.
Inventor： Jun Wang , Ning Zhang , Zheao Ma , Jiaxing Liu , Wei Yuan
CPC classification number: G01J1/44 , G01J1/4228 , G05F3/30 , G01J2001/444 , G01J2001/4466
Abstract: The present invention is directed to electrical circuits and methods. According to a specific embodiment, the present invention provides a voltage compensation mechanism for one or more single-phone avalanche diodes (SPADs). A reference voltage is generated based at least on an operating voltage of the SPADs. The reference voltage is coupled to a charge pump that generates a compensation voltage for the diodes. There are other embodiments as well.
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公开(公告)号：US20240073560A1
公开(公告)日：2024-02-29
申请号：US18485703
申请日：2023-10-12
Applicant: Sony Semiconductor Solutions Corporation
Inventor： Tatsuki Nishino , Hiroki Hiyama , Shizunori Matsumoto , Takahiro Miura , Akihiko Miyanohara , Tomohiro Matsumoto
IPC: H04N25/704 , G01J1/44 , H01L27/146 , H04N25/50
CPC classification number: H04N25/704 , G01J1/44 , H01L27/14643 , H04N25/50 , G01J2001/4466
Abstract: To control an excess bias to an appropriate value in a light detection device.
A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.-
Patent Agency Ranking
公开(公告)号：US20240061083A1
公开(公告)日：2024-02-22
申请号：US18495608
申请日：2023-10-26
Inventor： Christopher TOWNSEND , Thineshwaran GOPAL KRISHNAN , James Peter Drummond DOWNING , Kevin CHANNON
CPC classification number: G01S7/4814 , G01J1/44 , G01S7/4816 , G01S17/10 , G02B27/30 , H01S5/423 , H01S5/02253 , G01J2001/4466 , G01J2001/448
Abstract: An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.
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公开(公告)号：US11898906B2
公开(公告)日：2024-02-13
申请号：US17626442
申请日：2020-07-14
Inventor： Thomas Frach , Torsten Solf , Dennis Groben
CPC classification number: G01J1/44 , H03K5/2463 , H03K5/26 , G01J2001/4406 , G01J2001/4466
Abstract: The present application relates generally to silicon photomultiplier (SiPM) detector arrays. In one aspect, there is a system including an array of cells each including a single-photon avalanche diode (SPAD) reverse-biased above a breakdown voltage of the SPAD. The system may further include a trigger network configured to generate pulses on a trigger line in response to SPADs of the array undergoing breakdown. The system may still further include a pulse-width filter configured to block pulses on the trigger line whose pulse width is less than a threshold width.
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公开(公告)号：US11843008B2
公开(公告)日：2023-12-12
申请号：US17498286
申请日：2021-10-11
Inventor： Francois Guyader , Sara Pellegrini , Bruce Rae
IPC: H01L27/146 , G01J1/44 , H01L31/107 , H04N25/70
CPC classification number: H01L27/1461 , G01J1/44 , H01L27/14634 , H01L31/107 , H04N25/70 , G01J2001/4466
Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
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99.发明授权公开(公告)号：US11835386B2
公开(公告)日：2023-12-05
申请号：US18145442
申请日：2022-12-22
Applicant: CANON KABUSHIKI KAISHA
Inventor： Shogo Yamasaki
IPC: G01J1/44 , H01L31/107
CPC classification number: G01J1/44 , H01L31/107 , G01J2001/442 , G01J2001/4466
Abstract: A photoelectric conversion device according to an embodiment of the present disclosure includes an avalanche photodiode, a pulse generation unit that converts an output from the avalanche photodiode into a pulse signal, a pulse count unit that counts the pulse signal and outputs a pulse count value, a time count unit that outputs a time count value indicating a time from the start of operation of the pulse generation unit, an output unit that, when the pulse count value does not exceed a threshold value, outputs the pulse count value, and when the pulse count value exceeds the threshold value, ends counting in the pulse count unit and outputs the time count value at the time of the pulse count value exceeding the threshold value, and a threshold calculation unit that calculates the threshold value using the time count value.
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公开(公告)号：US11818481B2
公开(公告)日：2023-11-14
申请号：US17987266
申请日：2022-11-15
Applicant: Sony Semiconductor Solutions Corporation
Inventor： Tatsuki Nishino , Hiroki Hiyama , Shizunori Matsumoto , Takahiro Miura , Akihiko Miyanohara , Tomohiro Matsumoto
IPC: H04N25/704 , G01J1/44 , H01L27/146 , H04N25/50
CPC classification number: H04N25/704 , G01J1/44 , H01L27/14643 , H04N25/50 , G01J2001/4466
Abstract: To control an excess bias to an appropriate value in a light detection device.
A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.
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