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公开(公告)号:US20240337532A1
公开(公告)日:2024-10-10
申请号:US18746425
申请日:2024-06-18
Applicant: CANON KABUSHIKI KAISHA
Inventor: Yasuharu Ota , Yukihiro Kuroda
IPC: G01J1/44 , H04N25/709 , H04N25/75 , H04N25/76
CPC classification number: G01J1/44 , H04N25/709 , H04N25/75 , H04N25/76 , G01J2001/442 , G01J2001/4466
Abstract: A photoelectric conversion device includes an avalanche multiplying photodiode, a signal generation unit that includes a control unit configured to control an applied voltage to the photodiode and generates a photon detection pulse based on an output generated by incidence of a photon to the photodiode, and a counter that counts the photon detection pulse output from the signal generation unit, and the counter outputs a setting value detection signal when a count value of the photon detection pulse reaches a predetermined setting value, and in response to receiving the setting value detection signal, the control unit controls the applied voltage to the photodiode so as to stop generation of an avalanche current in the photodiode.
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公开(公告)号:US12107174B2
公开(公告)日:2024-10-01
申请号:US17760875
申请日:2020-06-16
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Dan Luo , Tatsuki Nishino
IPC: H01L31/02 , G01J1/44 , G01S7/4865 , H01L31/107
CPC classification number: H01L31/02027 , G01J1/44 , G01S7/4865 , H01L31/107 , G01J2001/4466
Abstract: A light detecting device includes first pixel circuitry including a first avalanche photodiode, and second pixel circuitry including a second avalanche photodiode, a first delay circuit including an input coupled to a cathode of the second avalanche photodiode, a first circuit including a first input coupled to the cathode of the second avalanche photodiode, and a second input coupled to an output of the first delay circuit. The light detecting device includes a control circuit coupled to an output of the first circuit and configured to control a potential of an anode of the first avalanche photodiode based on the output of the first circuit. The control circuit is configured to control a potential of an anode of the second avalanche photodiode based on the output of the first circuit.
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公开(公告)号:US12080822B2
公开(公告)日:2024-09-03
申请号:US17311798
申请日:2019-11-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hironori Sonobe
IPC: H01L31/107 , G01J1/44 , H01L27/144 , H01L31/02
CPC classification number: H01L31/107 , G01J1/44 , H01L27/1446 , H01L31/02027 , G01J2001/4466
Abstract: In a light detection device, the semiconductor substrate forms an APD and a temperature compensation diode so as to be spaced apart from each other. The semiconductor substrate includes a peripheral carrier absorbing portion configured to absorb carriers located at the periphery, between the APD and the temperature compensation diode when viewed from the direction perpendicular to the main surface. When viewed from the direction perpendicular to the main surface, on a line segment connecting the APD and the temperature compensation diode at the shortest distance, the shortest distance between the APD and the peripheral carrier absorbing portion is smaller than the shortest distance between the temperature compensation diode and a portion, which is closest to the APD, of edges of the peripheral carrier absorbing portion.
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公开(公告)号:US20240271998A1
公开(公告)日:2024-08-15
申请号:US18568420
申请日:2022-06-03
Applicant: SIGNIFY HOLDING B.V.
Inventor: HAIMIN TAO , CHRISTIAN JORDAN , ALEKSANDAR SEVO , KARNEKUMAR ARULANDU
CPC classification number: G01J1/44 , G01K7/22 , G01J2001/444 , G01J2001/4466
Abstract: A bias circuit (100) of an avalanche photodiode, APD, comprising: a voltage conversion module (110) connected to the APD, wherein the voltage conversion module (110) is configured to convert an input supply voltage (Vin) to a bias voltage for the APD; an error amplifier (120) connected to the voltage conversion module (110) for implementing a feedback control; a voltage feedback loop (130) configured to provide the error amplifier (120) a first analog signal related to the bias voltage; and a current feedback loop (140) configured to provide the error amplifier (120) a second analog signal related to the APD current; wherein the error amplifier (120) is configured to control the voltage conversion module (110) based on the first and the second analog signals.
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公开(公告)号:US12027635B2
公开(公告)日:2024-07-02
申请号:US18059307
申请日:2022-11-28
Applicant: SLT Technologies, Inc.
Inventor: Drew W. Cardwell , Mark P. D'Evelyn
IPC: H01L31/0232 , G01J1/04 , G01J1/44 , H01L31/109
CPC classification number: H01L31/02327 , G01J1/0425 , G01J1/44 , H01L31/109 , G01J2001/4466
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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公开(公告)号:US12015384B2
公开(公告)日:2024-06-18
申请号:US16997951
申请日:2020-08-20
Applicant: Artilux, Inc.
Inventor: Yun-Chung Na , Yen-Cheng Lu
IPC: H03F3/08 , G01J1/44 , H01L31/107 , H01L31/18
CPC classification number: H03F3/085 , G01J1/44 , H01L31/107 , H01L31/1808 , H03F3/087 , G01J2001/4466
Abstract: A photo-current amplification apparatus is provided. The photo-current amplification apparatus includes a photo-detecting device including: a substrate; an absorption region comprising germanium, the absorption region supported by the substrate and configured to receive an optical signal and to generate a first electrical signal based on the optical signal; an emitter contact region of a conductivity type; and a collector contact region of the conductivity type, wherein at least one of the emitter contact region or the collector contact region is formed outside the absorption region, and wherein a second electrical signal collected by the collector contact region is greater than the first electrical signal generated by the absorption region.
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公开(公告)号:US20240163576A1
公开(公告)日:2024-05-16
申请号:US18056093
申请日:2022-11-16
Applicant: BAE Systems Imaging Solutions Inc.
Inventor: Xianmin Yi , Chien-Horn Lu , Shanli Hu , Edmond Tam , Angel Rogelio Lopez , William Tian
IPC: H04N5/355 , G01J1/44 , H04N5/357 , H04N5/3745
CPC classification number: H04N5/355 , G01J1/44 , H04N5/3577 , H04N5/3745 , G01J2001/4466
Abstract: Techniques to provide a low-power single-photon avalanche diode (SPAD) image. An example imaging device includes a SPAD array having a plurality of pixels configured to detect electromagnetic radiation, and a processing device configured to deactivate, based on an event count, a pixel of the SPAD array for a remaining duration of a first detection frame of the SPAD array. The pixel can remain deactivated for the remaining duration, and the remaining duration can span from a deactivation time until an end of the first SPAD frame. The processing device can be further configured to reactivate the pixel in a subsequent detection frame of the SPAD array.
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公开(公告)号:US11969259B2
公开(公告)日:2024-04-30
申请号:US17176487
申请日:2021-02-16
Applicant: HI LLC
Inventor: Scott Jeremy Seidman , Jennifer Rines , Ryan Field , Isai Olvera
CPC classification number: A61B5/6803 , A61B5/0059 , A61B5/6814 , G01J1/0425 , G01J1/4228 , G01J1/44 , G06F3/015 , A61B2562/0238 , G01J2001/4466
Abstract: A wearable module for use in an optical measurement system includes a housing including a top surface, a light guide including a distal end portion adapted to protrude from the top surface of the housing, and a spring member configured to bias the distal end portion of the light guide away from the top surface of the housing. The light guide is configured to receive, at the distal end portion, photons from a light pulse scattered by a target within a body of a user and guide the received photons toward a photodetector.
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公开(公告)号:US11940536B2
公开(公告)日:2024-03-26
申请号:US17250686
申请日:2019-08-16
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Tatsuki Nishino
IPC: G01S17/89 , G01J1/44 , H04N25/705
CPC classification number: G01S17/89 , G01J1/44 , H04N25/705 , G01J2001/4466
Abstract: The present technology relates to a light receiving element and a ranging system to reduce power consumption. A light receiving element includes a pixel which includes an SPAD, a first transistor configured to set a cathode voltage of the SPAD at a first negative voltage, a voltage conversion circuit configured to convert the cathode voltage of the SPAD upon incidence of a photon and output the converted cathode voltage, and an output unit configured to output a detection signal indicating the incidence of the photon on the SPAD on the basis of the converted cathode voltage. The present technology is applicable to a ranging system that detects a range in a depth direction to a subject, for example.
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公开(公告)号:US20240063235A1
公开(公告)日:2024-02-22
申请号:US18386859
申请日:2023-11-03
Inventor: Francois GUYADER , Sara PELLEGRINI , Bruce RAE
IPC: H01L27/146 , G01J1/44 , H01L31/107 , H04N25/70
CPC classification number: H01L27/1461 , G01J1/44 , H01L27/14634 , H01L31/107 , H04N25/70 , G01J2001/4466
Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
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