公开(公告)号：US20110090480A1

公开(公告)日：2011-04-21

申请号：US12603120

申请日：2009-10-21

Applicant: Yeh-Hung Lai ,  Gerald W. Fly ,  Jeffrey A. Rock

Inventor： Yeh-Hung Lai ,  Gerald W. Fly ,  Jeffrey A. Rock

IPC: G03B27/54 ,  G03B27/32

CPC classification number: G03F7/2014 ,  G03F7/201 ,  G03F7/203 ,  G03F7/70291 ,  H01M8/0221 ,  H01M8/0239 ,  H01M8/0284 ,  H01M8/0286

Abstract: A system for fabricating a radiation-cured structure is provided. The system includes a radiation-sensitive material configured to at least one of initiate, polymerize, crosslink and dissociate with exposure to radiation. At least one radiation source is configured to project a radiation beam toward the radiation-sensitive material. A smart glass device is disposed between the radiation-sensitive material and the at least one radiation source. The smart glass device includes at least one switchable layer selectively operable from an active state to an inactive state. The smart glass device is configured to expose the radiation-sensitive material to a desired exposure pattern when in one of the active state and the inactive state. A method for fabricating the radiation-cured structure is also provided.

Abstract translation: 提供了一种用于制造辐射固化结构的系统。 该系统包括被配置成在暴露于辐射时引发，聚合，交联和离解中的至少一种的辐射敏感材料。 至少一个辐射源被配置成将辐射束投射到辐射敏感材料。 智能玻璃装置设置在辐射敏感材料和至少一个辐射源之间。 智能玻璃装置包括从活动状态到非活动状态选择性地操作的至少一个可切换层。 智能玻璃装置配置成当处于活动状态和非活动状态之一时将辐射敏感材料暴露于期望的曝光图案。 还提供了一种制造辐射固化结构的方法。

公开(公告)号：US20110079158A1

公开(公告)日：2011-04-07

申请号：US12660451

申请日：2010-02-26

Applicant: David A. Recchia ,  Timothy Gotsick

Inventor： David A. Recchia ,  Timothy Gotsick

IPC: B41N1/00 ,  B32B3/30

CPC classification number: B41N1/06 ,  B41C1/055 ,  B41M1/04 ,  B41N1/12 ,  G03F7/09 ,  G03F7/201 ,  G03F7/2012 ,  G03F7/202 ,  Y10T428/24521

Abstract: A method of making a relief image printing element from a photosensitive printing blank is provided. A photosensitive printing blank with a laser ablatable layer disposed on at least one photocurable layer is ablated with a laser to create an in situ mask. The printing blank is then exposed to at least one source of actinic radiation through the in situ mask to selectively cross link and cure portions of the photocurable layer. Diffusion of air into the at least one photocurable layer is limited during the exposing step and preferably at least one of the type, power and incident angle of illumination of the at least one source of actinic radiation is altered during the exposure step. The resulting relief image comprises a plurality of dots and a dot shape of the plurality of dots that provide optimal print performance on various substrates, including corrugated board.

Abstract translation: 提供了一种从感光印刷坯料制造浮雕图像打印元件的方法。 设置在至少一个光固化层上的具有激光烧蚀层的感光印刷坯料用激光烧蚀以产生原位掩模。 然后将印刷坯料通过原位掩模暴露于至少一种光化辐射源，以选择性地交联并固化可光固化层的部分。 在曝光步骤期间限制空气向至少一个光固化层的扩散，并且优选在曝光步骤期间改变至少一种光化辐射源的类型，功率和入射角的至少一种。 所产生的浮雕图像包括多个点的多个点和点形状，其在包括瓦楞纸板的各种基底上提供最佳打印性能。

公开(公告)号：US07820365B1

公开(公告)日：2010-10-26

申请号：US11779605

申请日：2007-07-18

Applicant: John D. Williams ,  William C. Sweatt

Inventor： John D. Williams ,  William C. Sweatt

IPC: G03F7/26

CPC classification number: G03F7/0005 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  G02B6/1225 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2039 ,  G03F7/70008 ,  G03F7/70283 ,  G03F7/7035 ,  G03F7/70725 ,  H01J37/3174

Abstract: A method to fabricate a tilted logpile photonic crystal requires only two lithographic exposures and does not require mask repositioning between exposures. The mask and photoresist-coated substrate are spaced a fixed and constant distance apart using a spacer and the stack is clamped together. The stack is then tilted at a crystallographic symmetry angle (e.g., 45 degrees) relative to the X-ray beam and rotated about the surface normal until the mask is aligned with the X-ray beam. The stack is then rotated in plane by a small stitching angle and exposed to the X-ray beam to pattern the first half of the structure. The stack is then rotated by 180° about the normal and a second exposure patterns the remaining half of the structure. The method can use commercially available DXRL scanner technology and LIGA processes to fabricate large-area, high-quality tilted logpile photonic crystals.

Abstract translation: 制造倾斜对数光子晶体的方法仅需要两次光刻曝光，并且不需要曝光之间的掩模重新定位。 掩模和光致抗蚀剂涂覆的基板使用间隔物间隔开固定和恒定的距离，并且将堆叠夹在一起。 然后将叠层相对于X射线束以结晶对称角度（例如45度）倾斜，并围绕表面法线旋转，直到掩模与X射线束对准。 然后将该堆叠在平面中以小的缝合角旋转并暴露于X射线束以对结构的前半部进行图案化。 然后将堆叠围绕正常方向旋转180°，并且第二次曝光模拟结构的剩余一半。 该方法可以使用市售的DXRL扫描仪技术和LIGA工艺来制造大面积，高质量的倾斜对数光子晶体。

公开(公告)号：US20100195082A1

公开(公告)日：2010-08-05

申请号：US12694936

申请日：2010-01-27

Applicant: Yong-Kyu Yoon ,  JungKwun Kim ,  Mark G. Allen

Inventor： Yong-Kyu Yoon ,  JungKwun Kim ,  Mark G. Allen

IPC: G03B27/58 ,  G03F7/20 ,  B65D85/00

CPC classification number: G03F7/201

Abstract: A system according to an embodiment of the present invention comprises a movable stage having a top surface. A photosensitive material may be deposited on the top surface and a mask may be placed on the photosensitive material. A vessel, having a top portion, one or more flexible sides, and a transparent base, is configured to be placed adjacent to the mask. The base is configured to be movable relative to the top portion of the vessel. In this way, the movable stage, photosensitive material, and mask may move in conjunction with the base of the vessel.

Abstract translation: 根据本发明的实施例的系统包括具有顶表面的可移动台。 感光材料可以沉积在顶表面上，并且掩模可以放置在感光材料上。 具有顶部，一个或多个柔性侧面和透明基底的容器构造成邻近掩模放置。 基部构造成相对于容器的顶部可移动。 以这种方式，可移动台，感光材料和面罩可以与容器的底部一起移动。

公开(公告)号：US20100044913A1

公开(公告)日：2010-02-25

申请号：US12530992

申请日：2008-03-19

Applicant: Hideki Etori

Inventor： Hideki Etori

IPC: B29C33/42 ,  G03F7/20

CPC classification number: G02B5/0278 ,  B29C33/3842 ,  B29C33/424 ,  G02B3/0012 ,  G02B5/021 ,  G02B5/0226 ,  G02B5/0242 ,  G02B5/0268 ,  G02F1/1303 ,  G02F1/133707 ,  G03F7/0005 ,  G03F7/2008 ,  G03F7/201 ,  G03F7/70075 ,  G03F7/7035 ,  G03F7/70533

Abstract: A method for producing surface convexes or concaves enabling easy and highly precise formation of desired convex/concave shapes using a photomask is provided.A mask member 20 having light transmitting sections and non-light transmitting sections is disposed over one side of a photosensitive film 10 consisting of a photosensitive resin composition with an interval with respect to the photosensitive film 10, and a light diffusing member 30 is disposed on the opposite side of the photosensitive film 10 across the mask member 20. Light is irradiated from a light source disposed on the opposite side of the mask member 20 across the light diffusing member 30 to subject the photosensitive film 10 to light exposure through the light diffusing member 30 and the light transmitting sections of the mask member 20. Exposed portions or unexposed portions of the photosensitive film 10 are removed by development to produce convexes or concaves on the photosensitive film 10 in shapes determined by shapes of the exposed portions or unexposed portions. In the light exposure, light exposure conditions such as haze of the light diffusing member 30 are controlled to control the shapes of the exposed portions or unexposed portions.

Abstract translation: 提供一种用于制造表面凸起或凹陷的方法，其能够使用光掩模容易且高度精确地形成所需的凸/凹形状。 具有透光部和非透光部的荫罩构件20配置在由感光性树脂组合物构成的感光性膜10的与感光性膜10间隔的一侧，光扩散构件30配置在 感光膜10的相对侧面对掩模构件20.光从设置在掩模构件20的相对侧的光源穿过光漫射构件30照射，以使感光膜10通过光扩散 构件30和掩模构件20的透光部分。通过显影除去感光膜10的暴露部分或未曝光部分，以由曝光部分或未曝光部分的形状确定的形状在感光膜10上产生凸起或凹陷。 在曝光中，控制光扩散构件30的雾度等曝光条件，以控制曝光部分或未曝光部分的形状。

公开(公告)号：US07659040B2

公开(公告)日：2010-02-09

申请号：US11214891

申请日：2005-08-31

Applicant: Yuji Setta

Inventor： Yuji Setta

IPC: G03F1/00

CPC classification number: G03F1/36 ,  G03F7/201

Abstract: An exposure mask 24, includes a quartz (transparent) substrate 20, a film 21 formed on the quartz substrate 20, a rectangular main feature 21a formed in the film 21, a first assist feature 21b formed in the film 21 away from the main feature 21a and having a size that is not resolved as a rectangle that has a long side 21e opposing to one side 21d of the main feature 21d, and a second assist feature 21c formed in the film 21 and positioned on a virtual prolonged line L of a diagonal of the main feature 21a and having a size that is not resolved.

Abstract translation: 曝光掩模24包括石英（透明）基板20，形成在石英基板20上的膜21，形成在膜21中的矩形主要部分21a，形成在膜21中的远离主要特征的第一辅助部分21b 21a并且具有未被分解为具有与主要特征21d的一个侧面21d相对的长边21e的矩形的尺寸，以及形成在胶片21中并且位于主要特征21d的虚拟延长线L上的第二辅助特征21c 主要特征21a的对角线并且具有未解决的尺寸。

公开(公告)号：US20100009140A1

公开(公告)日：2010-01-14

申请号：US12559574

申请日：2009-09-15

Applicant: Antonius Johannes Maria Nellissen

Inventor： Antonius Johannes Maria Nellissen

IPC: B32B3/10 ,  G03F7/20 ,  G03F1/00

CPC classification number: G03F1/00 ,  G03F7/201 ,  G03F7/703 ,  G03F7/7035 ,  Y10T428/24802

Abstract: In a lithographic proximity method for wiring an end or internal side surface of a substrate the required exposure of strips (76), defining the wiring pattern, is performed by means of a mask (70) comprising a diffraction structure (74) to deflect exposure radiation (b) to the side surface. An exposure beam, which is perpendicularly incident on the mask, is used so that enhanced tolerance for proximity gap width variations is obtained. The method allows manufacture of accurate and fine wiring.

Abstract translation: 在用于布线基板的端侧或内侧表面的光刻接近方法中，通过包括衍射结构（74）的掩模（70）来执行限定布线图案的条（76）的所需曝光以偏转曝光 辐射（b）到侧面。 使用垂直入射到掩模上的曝光光束，从而获得增强的接近间隙宽度变化的公差。 该方法允许制造精确和精细的接线。

公开(公告)号：US07588882B2

公开(公告)日：2009-09-15

申请号：US10945897

申请日：2004-09-22

Applicant: Filippo Romanato ,  Enzo Di Fabrizio ,  Rakesh Kumar

Inventor： Filippo Romanato ,  Enzo Di Fabrizio ,  Rakesh Kumar

IPC: H01L21/02

CPC classification number: G03F7/00 ,  G03F7/095 ,  G03F7/201 ,  G03F7/2014 ,  G03F7/203

Abstract: What is described is a lithographic method for fabricating three-dimensional structures on the micrometric and submicro-metric scale, including the operations of: depositing a layer of a first resist on a substrate; depositing a layer of a second resist on the layer of the first resist; forming a pattern of the second resist by lithography; depositing a further layer of the first resist on the previous layers; and forming a pattern of the first resist by lithography. The second resist is sensitive to exposure to charged particles or to electromagnetic radiation in a different way from the first; in other words, it is transparent to the particles or to the electromagnetic radiation to which the first resist is sensitive, and therefore the processes of exposure and development of the two resists are mutually incompatible to the extent that the exposure and development of one does not interfere with the exposure and development of the other.

Abstract translation: 描述的是用于在微米和亚微米度量上制造三维结构的光刻方法，包括以下操作：在衬底上沉积第一抗蚀剂层; 在第一抗蚀剂的层上沉积第二抗蚀剂层; 通过光刻形成第二抗蚀剂的图案; 在先前的层上沉积另一层第一抗蚀剂层; 以及通过光刻形成第一抗蚀剂的图案。 第二抗蚀剂以与第一抗蚀剂不同的方式对暴露于带电粒子或电磁辐射敏感; 换句话说，对于第一抗蚀剂敏感的颗粒或电磁辐射是透明的，因此两种抗蚀剂的曝光和显影的过程相互不相容，使得曝光和显影不会 干扰另一方的曝光和发展。

公开(公告)号：US20090162798A1

公开(公告)日：2009-06-25

申请号：US12379308

申请日：2009-02-18

Applicant: Takao Tomono

Inventor： Takao Tomono

IPC: G03F7/20 ,  B32B3/10 ,  B29C33/00 ,  G03B27/52

CPC classification number: B81C1/00111 ,  A61M37/00 ,  A61M37/0015 ,  A61M2037/0023 ,  A61M2037/0053 ,  B81B2201/055 ,  G03F7/201 ,  G03F7/2022 ,  Y10T428/24479

Abstract: A method of manufacturing a master plate includes the steps of forming a photoresist film on a substrate, disposing a photomask having a plurality of island radiation shields on the photoresist film followed by integrating the photomask and the photoresist film, applying light from a light source to the photoresist film through the photomask for selectively exposing the photoresist film, and developing the photoresist film to form a master plate, in which the method includes irradiating the photoresist film with the light from plural directions through the photomask to selectively expose the photoresist film from the respective directions.

Abstract translation: 制造母板的方法包括以下步骤：在衬底上形成光致抗蚀剂膜，将具有多个岛状辐射屏蔽的光掩模设置在光致抗蚀剂膜上，然后将光掩模和光致抗蚀剂膜整合，将来自光源的光施加到 所述光致抗蚀剂膜通过所述光掩模用于选择性地暴露所述光致抗蚀剂膜，以及显影所述光致抗蚀剂膜以形成母板，其中所述方法包括用来自多个方向的光照射所述光致抗蚀剂膜通过所述光掩模，以选择性地将所述光致抗蚀剂膜从 各自的方向。

公开(公告)号：US20090042137A1

公开(公告)日：2009-02-12

申请号：US12026445

申请日：2008-02-05

Applicant: John C. Wolfe ,  Barry Craver ,  Paul Ruchhoeft

Inventor： John C. Wolfe ,  Barry Craver ,  Paul Ruchhoeft

IPC: G03F7/20

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  G03F7/201 ,  G03F7/203 ,  Y10S430/143

Abstract: The present inventors have developed an accurate method for forming a plurality of images on a substrate. The present method provides an improved pattern replication technique that provides submicron resolution, for example 20 nm or less, especially 10 nm or less. The method may involve moving a structured beam of energetic radiation across a target substrate. The motion of an image of the template mask on the substrate is achieved by tilting a mask and substrate assembly relative to the axis of the incident beam. The technique does not require high precision motion of the template mask relative to the target substrate. The energetic radiation may comprise energetic particles. The technique is insensitive to particle energy and can be applied to uncharged, neutral particles.

Abstract translation: 本发明人开发了在基板上形成多个图像的精确方法。 本方法提供了提供亚微米分辨率的改进的图案复制技术，例如20nm或更小，特别是10nm或更小。 该方法可以涉及将目标基底上的能量辐射的结构化束移动。 通过使掩模和基板组件相对于入射光束的轴线倾斜来实现模板掩模在基板上的图像的运动。 该技术不需要模板掩模相对于目标衬底的高精度运动。 能量辐射可以包括高能粒子。 该技术对粒子能量不敏感，可应用于不带电的中性粒子。