公开(公告)号：US20140047189A1

公开(公告)日：2014-02-13

申请号：US14058078

申请日：2013-10-18

Applicant: Microsoft Corporation

Inventor： Michael R. Fortin ,  Robert L. Reinauer

IPC: G06F12/08 ,  G06F12/12

CPC classification number: G06F12/0804 ,  G06F3/0611 ,  G06F3/0616 ,  G06F3/065 ,  G06F3/0685 ,  G06F12/0246 ,  G06F12/0808 ,  G06F12/0868 ,  G06F12/0873 ,  G06F12/12 ,  G06F2212/1024 ,  G06F2212/1036 ,  G06F2212/3042 ,  G06F2212/305 ,  G06F2212/7211

Abstract: Determining and using the ideal size of memory to be transferred from high speed memory to a low speed memory may result in speedier saves to the low speed memory and a longer life for the low speed memory.

Abstract translation: 确定和使用要从高速存储器传输到低速存储器的存储器的理想尺寸可以更快速地节省低速存储器并且延长低速存储器的使用寿命。

公开(公告)号：US08645619B2

公开(公告)日：2014-02-04

申请号：US13553194

申请日：2012-07-19

Applicant: Wendy A. Belluomini ,  Binny S. Gill ,  James L. Hafner ,  Steven R. Hetzler ,  Eyal Lotern ,  Venu G. Nayar ,  Assaf Nitzan ,  Edi Shmueli ,  Daniel F. Smith

Inventor： Wendy A. Belluomini ,  Binny S. Gill ,  James L. Hafner ,  Steven R. Hetzler ,  Eyal Lotern ,  Venu G. Nayar ,  Assaf Nitzan ,  Edi Shmueli ,  Daniel F. Smith

IPC: G06F12/00

CPC classification number: G06F12/0888 ,  G06F12/0246 ,  G06F12/0866 ,  G06F12/0897 ,  G06F2212/1036 ,  G06F2212/222

Abstract: Embodiments of the invention relate to throttling accesses to a flash memory device. The flash memory device is part of a storage system that includes the flash memory device and a second memory device. The throttling is performed by logic that is external to the flash memory device and includes calculating a throttling factor responsive to an estimated remaining lifespan of the flash memory device. It is determined whether the throttling factor exceeds a threshold. Data is written to the flash memory device in response to determining that the throttling factor does not exceed the threshold. Data is written to the second memory device in response to determining that the throttling factor exceeds the threshold.

公开(公告)号：US20130326269A1

公开(公告)日：2013-12-05

申请号：US13724761

申请日：2012-12-21

Applicant: Warner Losh ,  James G. Peterson

Inventor： Warner Losh ,  James G. Peterson

IPC: G06F11/20

CPC classification number: G06F11/2053 ,  G06F11/004 ,  G06F11/1068 ,  G06F11/108 ,  G06F12/0246 ,  G06F12/0607 ,  G06F2211/109 ,  G06F2212/1036 ,  G06F2212/7205 ,  G06F2212/7208 ,  G06F2212/7211 ,  G11C16/3418 ,  G11C16/349 ,  G11C29/82 ,  G11C2029/0409

Abstract: A storage controller is configured to determine a reliability metric of a storage division of a solid-state storage medium based on one or more test read operations. The storage division may be retired based on the reliability metric and/or the age of the data on the storage division. A storage division comprising aged data may be marked for post-write reliability testing, which may comprise determining a post-write reliability metric in response to grooming and/or reprogramming the storage division. The storage controller may project the reliability metric of the storage division to the end of a predetermined data retention period. Portions of a storage divisions that exhibit poor reliability may be removed to improve the reliability of the storage division without taking the entire storage division out of service.

Abstract translation: 存储控制器被配置为基于一个或多个测试读取操作来确定固态存储介质的存储分区的可靠性度量。 可以基于可靠性度量和/或存储部门上的数据的年龄来停止存储部门。 包括老化数据的存储部分可以被标记为写入后可靠性测试，其可以包括响应于对存储部门进行梳理和/或重新编程来确定写入后可靠性度量。 存储控制器可以将存储部门的可靠性度量投影到预定数据保留期间的结束。 可能会删除显示较差可靠性的存储部门的部分，以提高存储部门的可靠性，而不会使整个存储部门失去使用。

公开(公告)号：US08595421B2

公开(公告)日：2013-11-26

申请号：US13432763

申请日：2012-03-28

Applicant: Petro Estakhri ,  Siamack Nemazie

Inventor： Petro Estakhri ,  Siamack Nemazie

IPC: G06F12/02 ,  G06F11/10 ,  H03M13/05

CPC classification number: G06F3/0605 ,  G06F3/0616 ,  G06F3/0631 ,  G06F3/064 ,  G06F3/0647 ,  G06F3/0679 ,  G06F12/0246 ,  G06F12/1009 ,  G06F2212/1036 ,  G06F2212/214 ,  G06F2212/657 ,  G06F2212/7201 ,  G06F2212/7204 ,  G06F2212/7211 ,  G11C16/102

Abstract: A memory device has a plurality of dedicated data blocks for storing only user data and a plurality of dedicated overhead blocks for storing only overhead data that comprises ECC data that is used for error checking with respect to the user data in the dedicated data blocks. The dedicated data blocks can be erased without erasing the ECC data that is used for error checking with respect to the user data in the dedicated data blocks.

Abstract translation: 存储器装置具有用于仅存储用户数据的多个专用数据块和用于仅存储用于相对于专用数据块中的用户数据进行错误检查的ECC数据的开销数据的多个专用开销块。 可以擦除专用数据块而不擦除用于专用数据块中的用户数据的用于错误检查的ECC数据。

公开(公告)号：US20130275655A1

公开(公告)日：2013-10-17

申请号：US13549523

申请日：2012-07-16

Applicant: Ching-Wen Chang

Inventor： Ching-Wen Chang

IPC: G06F12/00

CPC classification number: G06F12/0246 ,  G06F2212/1036 ,  G06F2212/7202 ,  G11C2029/0409 ,  G11C2029/0411

Abstract: A memory management method for a rewritable non-volatile memory module including physical unit unions is provided. The physical unit unions are at least partitioned into a data area and a second area. Logical unit union addresses are managed by a file system and would be allocated and mapped to the physical unit unions of the data area. The method includes executing a procedure if a programming error occurs when programming a third physical unit union of the second area. The procedure includes obtaining a second physical unit union mapped to a second logical unit union address from the data area and mapping the second logical unit union address to the third physical unit union. Accordingly, the lifespan of the rewritable non-volatile memory module would be prolonged by the method.

Abstract translation: 提供了一种用于包括物理单元联合的可重写非易失性存储器模块的存储器管理方法。 物理单元联合体至少被划分为数据区域和第二区域。 逻辑单元联合地址由文件系统管理，并将被分配并映射到数据区的物理单元联合。 该方法包括如果在对第二区域的第三物理单元联合进行编程时发生编程错误，则执行该过程。 该过程包括从数据区域获得映射到第二逻辑单元联合地址的第二物理单元联合，并将第二逻辑单元联合地址映射到第三物理单元联合。 因此，通过该方法可以延长可重写非易失性存储器模块的寿命。

公开(公告)号：US20130132329A1

公开(公告)日：2013-05-23

申请号：US13300713

申请日：2011-11-21

Applicant: Krishnan Raghavan

Inventor： Krishnan Raghavan

IPC: G06N5/04

CPC classification number: G06F12/0223 ,  G06F3/06 ,  G06F3/0617 ,  G06F3/0644 ,  G06F3/0653 ,  G06F3/0679 ,  G06F11/00 ,  G06F11/1461 ,  G06F11/3013 ,  G06F11/3409 ,  G06F11/3485 ,  G06F2212/1032 ,  G06F2212/1036 ,  G06F2212/171 ,  G06F2212/7204

Abstract: A method and apparatus store media data on a portable electronic device. The method can include monitoring media data storage activity regarding user media data storage activity usage patterns that store media data in a memory in a portable electronic device. The method can include storing the media data storage activity data in the portable electronic device. The method can include triggering a full memory prediction algorithm based on a user action event that affects media data storage in the memory and can include running the full memory prediction algorithm in response to the trigger. The full memory prediction algorithm can predict when the memory will be substantially full based on past user media data storage behavior according to the media data storage activity data. The method can include outputting a potential upcoming full memory indication.

Abstract translation: 一种方法和装置将媒体数据存储在便携式电子设备上。 该方法可以包括监视关于将媒体数据存储在便携式电子设备中的存储器中的用户媒体数据存储活动使用模式的媒体数据存储活动。 该方法可以包括将媒体数据存储活动数据存储在便携式电子设备中。 该方法可以包括基于影响存储器中的媒体数据存储的用户动作事件触发全存储器预测算法，并且可以包括响应于触发而运行全存储器预测算法。 完整的存储器预测算法可以根据媒体数据存储活动数据，基于过去的用户媒体数据存储行为来预测存储器将何时基本上已满。 该方法可以包括输出潜在的即将到来的全存储器指示。

公开(公告)号：US08417881B1

公开(公告)日：2013-04-09

申请号：US12966338

申请日：2010-12-13

Applicant: Steve Kolokowsky

Inventor： Steve Kolokowsky

IPC: G06F12/00

CPC classification number: G06F12/0246 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C16/349 ,  G11C16/3495

Abstract: A system for wear-leveling of a non-volatile memory may include a controller configured to allocate memory blocks in the non-volatile memory, a logical-to-physical table populated with pointers to memory blocks in the nonvolatile memory, and a wear-leveling table configured to store two or more pointers to unallocated memory blocks in the non-volatile memory. The unallocated memory blocks are previously allocated to store data by the controller according to the pointers in the logical-to-physical table. The controller is further configured to identify two or more pointers in the wear-leveling table and to store data to the two or more memory blocks associated with the identified pointers.

Abstract translation: 用于非易失性存储器的磨损均衡的系统可以包括被配置为在非易失性存储器中分配存储块的控制器，用非易失性存储器中的存储器块指针填充的逻辑到物理表， 调配表被配置为存储非易失性存储器中的未分配存储器块的两个或更多个指针。 先前分配未分配的存储器块以根据逻辑到物理表中的指针由控制器存储数据。 控制器还被配置为识别磨损平衡表中的两个或更多个指针并且将数据存储到与所识别的指针相关联的两个或更多个存储器块。

公开(公告)号：US20130083619A1

公开(公告)日：2013-04-04

申请号：US13603364

申请日：2012-09-04

Applicant: Tae Ho Jeon ,  Won Sun Park

Inventor： Tae Ho Jeon ,  Won Sun Park

IPC: G11C8/00

CPC classification number: G11C16/10 ,  G06F7/764 ,  G06F11/0703 ,  G06F12/1408 ,  G06F2212/1036 ,  G11C7/1006 ,  G11C16/0483 ,  G11C16/34 ,  G11C16/3418

Abstract: A semiconductor device includes a first operation circuit configured to generate addition data by adding a column address and a page address and output a remainder obtained by dividing the addition data by a set value as seed data, a mask data output circuit configured to output mask data corresponding to the respective seed data, and a second operation circuit configured to generate random data by performing a logic operation on the mask data and program data corresponding to the column and page addresses.

Abstract translation: 半导体器件包括：第一操作电路，被配置为通过将列地址和页地址相加产生附加数据，并将通过将加法数据除以设定值而获得的余数作为种子数据，掩模数据输出电路，被配置为输出掩模数据 以及第二操作电路，被配置为通过对对应于列和页地址的掩码数据和程序数据执行逻辑运算来生成随机数据。

公开(公告)号：US20130073807A1

公开(公告)日：2013-03-21

申请号：US13657392

申请日：2012-10-22

Applicant: Round Rock Research, LLC

Inventor： William Radke ,  Michael Murray ,  Martin Ragnar Furuhjelm ,  John Geldman

IPC: G06F12/00

CPC classification number: G06F12/0246 ,  G06F2212/1016 ,  G06F2212/1036 ,  G06F2212/7201 ,  G06F2212/7211 ,  G11C16/349 ,  G11C2211/5641

Abstract: Methods and apparatus for managing data storage in hybrid memory devices utilizing single level and multi-level memory cells. Logical addresses can be distributed between single level and multilevel memory cells based on a frequency of write operations performed. Initial storage of data corresponding to a logical address in memory can be determined by various methods including initially writing all data to single level memory or initially writing all data to multilevel memory. Other methods permit a host to direct logical address writes to single level or multilevel memory cells based on anticipated usage.

Abstract translation: 用于使用单级和多级存储器单元在混合存储器件中管理数据存储的方法和装置。 逻辑地址可以基于执行的写操作的频率在单级和多级存储器单元之间分配。 可以通过各种方法来确定与存储器中的逻辑地址相对应的数据的初始存储，包括首先将所有数据写入单级存储器或者首先将所有数据写入多级存储器。 其他方法允许主机根据预期用途将逻辑地址写入指向单级或多级存储器单元。

公开(公告)号：US20120297114A1

公开(公告)日：2012-11-22

申请号：US13131938

申请日：2011-05-19

Applicant: Yoshiharu Koizumi ,  Kiyoshi Honda ,  Kazushi Sasaki ,  Keiichiro Uchida

Inventor： Yoshiharu Koizumi ,  Kiyoshi Honda ,  Kazushi Sasaki ,  Keiichiro Uchida

IPC: G06F12/00

CPC classification number: G06F12/0246 ,  G06F2212/1036 ,  G06F2212/1052 ,  G06F2212/262 ,  G06F2212/7208 ,  G06F2212/7211

Abstract: The present invention is provided for maintaining and replacing storage devices systematically in accordance with schedule. A storage control apparatus 1 has multiple storage devices 1A equipped with flash memory or the like. The storage control apparatus 1 monitors and records the utilization state of each storage device. When a storage device utilization state reaches a first threshold, the storage control apparatus starts an access control process to control the length of a maintenance period. When the storage device utilization state reaches a second threshold, the storage control apparatus executes blockage control, thereby causing this storage device to be replaced. The timing, at which a storage device with little lifetime remaining is replaced, is controlled to enhance maintenance work efficiency.

Abstract translation: 本发明提供用于按照时间表系统地维护和更换存储装置。 存储控制装置1具有配备有闪速存储器等的多个存储装置1A。 存储控制装置1监视并记录各存储装置的使用状态。 当存储装置利用状态达到第一阈值时，存储控制装置启动访问控制处理以控制维护周期的长度。 当存储装置利用状态达到第二阈值时，存储控制装置执行阻塞控制，从而使该存储装置更换。 控制具有较少寿命剩余的存储装置的定时被控制以提高维护工作效率。