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    EUV energy detection
    91.
    发明授权
    EUV energy detection 有权
    EUV能量检测

    公开(公告)号：US07154101B2

    公开(公告)日：2006-12-26

    申请号：US10403961

    申请日：2003-03-31

    Applicant: Eric Panning

    Inventor： Eric Panning

    IPC: G01J1/42

    CPC classification number: G03F7/7085 ,  B82Y10/00 ,  G01J1/429 ,  G21K1/062 ,  G21K2201/067

    Abstract: A detector for extreme ultraviolet (EUV) energy uses incidence reflectance of the EUV beam off the detector to both capture a small but controllable fraction of the EUV energy and to redirect most of the energy to its target. In one embodiment, a reflective coating of material on a sensor surface is used. In another embodiment, a multi-layer reflector on a sensor is used. A method of making the multi-layer reflector/sensor is also described.

    Abstract translation: 用于极紫外（EUV）能量的检测器使用EUV光束从检测器的入射反射率捕获EUV能量的小但可控的部分，并将大部分能量重定向到其目标。 在一个实施例中，使用传感器表面上的材料的反射涂层。 在另一个实施例中，使用传感器上的多层反射器。 还描述了制造多层反射器/传感器的方法。

    Method for repairing mask-blank defects using repair-zone compensation
    93.
    发明申请
    Method for repairing mask-blank defects using repair-zone compensation 审中-公开
    使用修补区补偿修复掩模 - 空白缺陷的方法

    公开(公告)号：US20060234135A1

    公开(公告)日：2006-10-19

    申请号：US11109026

    申请日：2005-04-18

    Applicant: Stefan Hau-Riege ,  Donald Sweeney ,  Anton Barty ,  Paul Mirkarimi ,  Daniel Stearns

    Inventor： Stefan Hau-Riege ,  Donald Sweeney ,  Anton Barty ,  Paul Mirkarimi ,  Daniel Stearns

    IPC: G03C5/00 ,  G21K5/00 ,  G03F1/00

    CPC classification number: G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/72 ,  G21K2201/067

    Abstract: A method for repairing mask-blank defects uses repair-zone compensation. Local disturbances are compensated over the post-defect-repair repair-zone by altering a portion of the absorber pattern on the surface of the mask blank. This enables the fabrication of defect-free (since repaired) X-ray Mo—Si multilayer mirrors. Repairing Mo—Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo—Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter.

    Abstract translation: 修复掩模 - 空白缺陷的方法使用修补区补偿。 通过改变掩模毛坯表面上的部分吸收体图案来补偿在缺陷后修复区域上的局部扰动。 这使得能够制造无缺陷（自修复的）X射线Mo-Si多层反射镜。 在掩模板上修复Mo-Si多层膜缺陷是EUVL商业成功的关键。 已知在制造过程中将颗粒加入到Mo-Si多层膜中。 减少这种污染有很大的努力，但结果是不够的，缺陷仍然是主要的面膜产量限制。

    Methods to manufacture contaminant-gettering materials in the surface of EUV optics
    94.
    发明申请
    Methods to manufacture contaminant-gettering materials in the surface of EUV optics 有权
    在EUV光学表面制造污染物吸收材料的方法

    公开(公告)号：US20060216912A1

    公开(公告)日：2006-09-28

    申请号：US11092167

    申请日：2005-03-28

    Applicant: Robert Bristol ,  Bruce Billett

    Inventor： Robert Bristol ,  Bruce Billett

    IPC: H05H1/00 ,  H01J35/00 ,  H01L21/322

    CPC classification number: G21K1/06 ,  G21K2201/067

    Abstract: Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed in the optical coating. The gettering agent is formed into the trenches over the photoresist. Next, the photoresist is removed from the optical coating to expose the gettering agent in the trenches. For another embodiment, patches of a nanotube forest having a gettering agent are formed in designated areas of an optical element. The gettering agent of the patches may be a plurality of carbon nanotubes. The optical coating is formed on a substrate between patches of the gettering agent.

    Abstract translation: 本文描述了在EUV光学器件的表面中制造污染物吸收材料的方法。 对光学元件进行图案化，并且在光学元件的表面上形成污染物吸收材料。 在一个实施例中，光致抗蚀剂沉积在光学元件上的光学涂层上。 在光学涂层中形成沟槽。 吸光剂形成在光致抗蚀剂上的沟槽中。 接下来，从光学涂层去除光致抗蚀剂以暴露沟槽中的吸杂剂。 对于另一个实施例，在光学元件的指定区域中形成具有吸气剂的纳米管森林的贴片。 补片的吸气剂可以是多个碳纳米管。 该光学涂层形成在吸气剂的贴片之间的衬底上。

    Production method of radiation image conversion panel
    96.
    发明申请
    Production method of radiation image conversion panel 失效
    辐射图像转换面板的制作方法

    公开(公告)号：US20060065850A1

    公开(公告)日：2006-03-30

    申请号：US11230827

    申请日：2005-09-21

    Applicant: Takehiko Shoji ,  Osamu Morikawa ,  Shinji Kudo

    Inventor： Takehiko Shoji ,  Osamu Morikawa ,  Shinji Kudo

    IPC: G03B42/08

    CPC classification number: G21K4/00 ,  C09K11/7733 ,  G21K2201/067

    Abstract: A method for producing a radiation image conversion panel containing the steps of: forming a stimulable phosphor layer on a substrate by a vapor deposition method to prepare a phosphor panel; hydrating the phosphor panel under a relative humidity of 30 to 60%; and sealing the phosphor panel with a moisture-proof protective film to prepare the radiation image conversion panel.

    Abstract translation: 一种辐射图像转换面板的制造方法，其特征在于，包括以下步骤：通过气相沉积法在基板上形成可激发的荧光体层以制备荧光体面板; 在30〜60％的相对湿度下对荧光体面板进行水合; 并用防湿保护膜密封荧光体面板以制备放射线图像转换面板。

    Damage-resistant coatings for EUV lithography components
    97.
    发明授权
    Damage-resistant coatings for EUV lithography components 失效
    用于EUV光刻元件的耐损伤涂层

    公开(公告)号：US06982133B2

    公开(公告)日：2006-01-03

    申请号：US10327599

    申请日：2002-12-21

    Applicant: Manish Chandhok ,  Kramadhati V. Ravi

    Inventor： Manish Chandhok ,  Kramadhati V. Ravi

    IPC: G01F9/00

    CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  G21K1/062 ,  G21K2201/067

    Abstract: Damage-resistant coatings are provided on radiation-exposed surfaces of EUV lithographic components. The diamond coating provides resistance to particle impingement, cleaning processes, and degradation due to high temperatures. The diamond coating is beneficial when deposited on the reflecting surface of an EUV Si/Mo multilayer mirror, grazing collector incidence mirror, the reflecting surface of an EUV Si/Mo multilayer reflective mask, and radiation-exposed surfaces of EUV debris shield. The diamond coating provides longer lasting EUV components.

    Abstract translation: 在EUV光刻部件的辐射暴露表面上提供耐损伤涂层。 金刚石涂层提供对颗粒冲击，清洁过程和由于高温导致的退化的抵抗力。 当沉积在EUV Si / Mo多层反射镜，放电收集器入射镜，EUV Si / Mo多层反射掩模的反射表面和EUV碎片屏蔽的辐射暴露表面时，金刚石涂层是有益的。 金刚石涂层提供更持久的EUV组件。

    Optical reflector element, its method of fabrication, and an optical instrument implementing such elements
    99.
    发明申请
    Optical reflector element, its method of fabrication, and an optical instrument implementing such elements 有权
    光反射元件，其制造方法以及实施这些元件的光学仪器

    公开(公告)号：US20050185306A1

    公开(公告)日：2005-08-25

    申请号：US11059108

    申请日：2005-02-16

    Applicant: Marcos Bavdaz ,  Marco Beijersbergen

    Inventor： Marcos Bavdaz ,  Marco Beijersbergen

    IPC: G02B23/00 ,  G02B5/08 ,  G02B5/10 ,  G02B13/00 ,  G21K1/06 ,  G02B17/00 ,  G02B21/00

    CPC classification number: G21K1/06 ,  G21K2201/067

    Abstract: The invention provides an optical reflector element (1) for a beam of X-rays (Rx) or of gamma-rays or of high-energy particles at grazing incidence, the element being constituted by a stack of superposed silicon plates (10-12). Each plate (10-12) has a reflecting top face (101-121) possibly coated with a metallic film, a multilayer or a dispersive grating and a bottom face carrying ribs (100-120) forming spacers between two successive plates (10-11, 11-12), and defining determined spacing between two successive reflecting faces (101-121). The invention also provides optical instruments comprising several such elements, in particular a type I Wolter telescope comprising two mirrors in tandem having respective paraboloid and hyperboloid surfaces of revolution or a conical approximation thereof or

    Abstract translation: 本发明提供了一种用于X射线束（R x X x）或γ射线或掠射入射的高能粒子的光学反射器元件（1），该元件由叠层构成 的重叠硅板（10-12）。 每个板（10-12）具有可能涂覆有金属膜，多层或分散光栅的反射顶面（101-121）和在两个连续板（10〜12）之间形成间隔件的肋（100-120）的底面， 并且在两个连续的反射面（101-121）之间限定确定的间隔。 本发明还提供了包括几个这样的元件的光学仪器，特别是包括串联的两个反射镜的I型沃尔特望远镜，其具有相应的旋转抛物面和双曲面的旋转曲面或其锥形近似，

    Planarization of substrate pits and scratches
    100.
    发明申请
    Planarization of substrate pits and scratches 审中-公开
    基底凹坑和划痕的平面化

    公开(公告)号：US20050118533A1

    公开(公告)日：2005-06-02

    申请号：US10964048

    申请日：2004-10-12

    Applicant: Paul Mirkarimi ,  Sherry Baker ,  Daniel Stearns ,  Eberhard Spiller

    Inventor： Paul Mirkarimi ,  Sherry Baker ,  Daniel Stearns ,  Eberhard Spiller

    IPC: C23C14/14 ,  C23C14/22 ,  C23C14/34 ,  C23C14/46 ,  C23C14/58 ,  G02B1/12 ,  G03F1/08 ,  G03F1/14 ,  G21K1/06 ,  G03F7/36

    CPC classification number: C23C14/14 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/223 ,  C23C14/3442 ,  C23C14/46 ,  C23C14/5833 ,  G02B1/12 ,  G03F1/24 ,  G21K1/062 ,  G21K2201/067

    Abstract: Ion-beam based deposition technique are provided for the planarization of pit and scratch defects in conjunction with particle defects. One application of this planarization technique is to mitigate the effects of pits and scratches and particles on reticles for extreme ultraviolet (EUV) lithography. In the planarization process, thin Si layers are successively deposited and etched away where the etching is directed at angles well away from normal incidence to the substrate to planarize pits and scratches without causing the particle defects to get too large; this is followed by a normal incidence etching process sequence designed primarily to planarize the particles but which will also planarize the pits and scratches to completion. The process also shows significant promise for planarizing substrate roughness.

    Abstract translation: 提供了基于离子束的沉积技术，用于平坦化凹坑和划痕缺陷以及颗粒缺陷。 这种平面化技术的一个应用是减轻凹坑和划痕和颗粒对极紫外（EUV）光刻的掩模版的影响。 在平坦化过程中，薄Si层被依次沉积并蚀刻掉，其中蚀刻以远离正常入射到衬底的角度定向，以平坦化凹坑和划痕而不会使颗粒缺陷变得太大; 这之后是主要设计为使颗粒平坦化但也将凹坑和划痕平坦化以完成的正常入射蚀刻工艺序列。 该工艺还显示出使基板粗糙度平坦化的显着前景。

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