Anisotropic conductive film
    98.
    发明申请
    Anisotropic conductive film 有权
    各向异性导电膜

    公开(公告)号:US20060113511A1

    公开(公告)日:2006-06-01

    申请号:US11228943

    申请日:2005-09-16

    Applicant: Ga-Lane Chen

    Inventor: Ga-Lane Chen

    Abstract: An anisotropic conductive film (10) is used for bonding a semiconductor component to a circuit board. The anisotropic conductive film includes an insulative adhesive film (12) and a plurality of nano-scaled conductive particles (14). The nano-scaled conductive particles are dispersed in the insulative adhesive film. The nano-scaled conductive particles are a nanotubes each containing metal particles and polyaniline therein. Because the sizes of the nano-scaled conductive particle are very small, more of the nano-scaled conductive particles can be compressed between two corresponding contacts of the semiconductor component and the circuit board. The interface area between the two corresponding contacts is correspondingly enlarged. In addition, the polyaniline both in the opening and inside of the nanotubes also has a more favorable viscosity. The bonding effect between a semiconductor component and a circuit board is improved.

    Abstract translation: 各向异性导电膜(10)用于将半导体部件接合到电路板。 各向异性导电膜包括绝缘粘合膜(12)和多个纳米级导电颗粒(14)。 纳米尺度的导电颗粒分散在绝缘粘合膜中。 纳米尺度的导电颗粒是各自含有金属颗粒和聚苯胺的纳米管。 由于纳米级导电颗粒的尺寸非常小,所以可以在半导体组件和电路板的两个对应的触点之间压缩更多的纳米级导电颗粒。 两个对应的触点之间的接口面积相应地扩大。 此外,纳米管的开口和内部的聚苯胺也具有更好的粘度。 提高了半导体元件与电路基板之间的接合效果。

    Wiring connection structure and method for forming the same
    99.
    发明申请
    Wiring connection structure and method for forming the same 审中-公开
    接线结构及其形成方法

    公开(公告)号:US20060071344A1

    公开(公告)日:2006-04-06

    申请号:US11079108

    申请日:2005-03-15

    Applicant: Mizuhisa Nihei

    Inventor: Mizuhisa Nihei

    Abstract: Disclosed is a wiring connection structure comprising a wiring on which a preferable carbon nanotube can be formed, and a method for forming the same. On a lower layer Cu wiring, Mo is deposited to form a connection layer. On this connection layer, a carbon nanotube is grown using a CVD method. When the connection layer composed of Mo is formed, the following advantages can be obtained. Even when heat is applied during the CVD for growing the carbon nanotube, thermal diffusion of Cu in the lower layer Cu wiring is suppressed so that activity of the catalyst metal can be kept. Further, since the contact resistance between Mo and the carbon nanotube is low, a low resistance connection between the lower layer Cu wiring and the carbon nanotube can be secured and at the same time, a preferable carbon nanotube can be formed.

    Abstract translation: 公开了一种布线连接结构及其形成方法,其中可以形成优选的碳纳米管的布线。 在下层Cu布线上,沉积Mo形成连接层。 在该连接层上,使用CVD法生长碳纳米管。 当形成由Mo组成的连接层时,可获得以下优点。 即使在用于生长碳纳米管的CVD期间施加热量,也抑制Cu在下层Cu布线中的热扩散,从而可以保持催化剂金属的活性。 此外,由于Mo和碳纳米管之间的接触电阻低,因此可以确保下层Cu布线和碳纳米管之间的低电阻连接,同时可以形成优选的碳纳米管。

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