中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

941 records (took 0.018 seconds)

    Growing and releasing diamonds
    91.
    发明授权
    Growing and releasing diamonds 失效
    生长和释放钻石

    公开(公告)号：US5891575A

    公开(公告)日：1999-04-06

    申请号：US605690

    申请日：1996-02-22

    Applicant: Michael J. Marchywka ,  Pehr E. Pehrsson

    Inventor： Michael J. Marchywka ,  Pehr E. Pehrsson

    IPC: C23C14/48 ,  C23C16/01 ,  C23C16/02 ,  C23C16/27 ,  C30B25/02 ,  C30B25/18 ,  C30B31/22 ,  B01J3/06

    CPC classification number: C23C16/274 ,  C23C14/48 ,  C23C16/01 ,  C23C16/0263 ,  C23C16/277 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  C30B31/22 ,  Y10T428/24942 ,  Y10T428/30

    Abstract: A process for making diamond and diamond products includes the steps of implanting ions in a diamond substrate to form a damaged layer of non-diamond carbon below the top surface of the substrate, heating the substrate to about 600-1200.degree. C., growing diamond on the top surface of the heated substrate by chemical vapor deposition, and electrochemically etching the damaged layer to separate the grown diamond from the substrate along the damage layer. The diamond product consists of a first diamond layer and a second diamond layer attached to the first layer. The second layer contains damage caused by ions traversing the second layer.

    Abstract translation: 制造金刚石和金刚石产品的方法包括以下步骤：将离子注入金刚石基底中，以在基底的顶表面下方形成非金刚石碳的损伤层，将基底加热至约600-1200℃，生长金刚石 通过化学气相沉积在加热的衬底的顶表面上，并且电化学蚀刻损伤层以沿着损伤层将生长的金刚石与衬底分离。 金刚石产品由连接到第一层的第一金刚石层和第二金刚石层组成。 第二层含有穿过第二层的离子造成的损伤。

    Plasma treatment method for treatment of a large-area work surface apparatus and methods
    92.
    发明授权
    Plasma treatment method for treatment of a large-area work surface apparatus and methods 失效
    用于处理大面积工作面装置和方法的等离子体处理方法

    公开(公告)号：US5643639A

    公开(公告)日：1997-07-01

    申请号：US361667

    申请日：1994-12-22

    Applicant: Ronald Alan Rudder ,  Robert Carlisle Hendry ,  George Carlton Hudson

    Inventor： Ronald Alan Rudder ,  Robert Carlisle Hendry ,  George Carlton Hudson

    IPC: C23C16/26 ,  C23C16/27 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H05H1/46 ,  H05H1/24 ,  B01J3/06 ,  H01L21/306

    CPC classification number: C23C16/45576 ,  C23C16/272 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46

    Abstract: A method and apparatus for generating plasmas adapted for chemical vapor deposition, etching and other operations, and in particular to the deposition of large-area diamond films, wherein a chamber defined by sidewalls surrounding a longitudinal axis is encircled by an axially-extending array of current-carrying conductors that are substantially transverse to the longitudinal axis of the chamber, and a gaseous material is provided in the chamber. A high-frequency current is produced in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber. A work surface extending in the direction of the longitudinal axis of the chamber is positioned adjacent a sidewall, exposed to the plasma sheath and treated by the plasma. Preferably, the ratio of the width to the height of the chamber is 10:1 or larger so that the chamber includes a large area planar surface adjacent the plasma sheath and adjacent to which a large area substrate or a plurality of substrates is arranged, whereby large area treatment, such as diamond deposition, can be performed.

    Abstract translation: 一种用于产生适于化学气相沉积，蚀刻和其它操作的等离子体的方法和装置，特别是沉积大面积金刚石薄膜，其中由围绕纵向轴线的侧壁限定的腔室被轴向延伸的阵列 基本上横贯室的纵向轴线的载流导体和气体材料设置在室中。 在导体中产生高频电流，以磁性地诱导室中气态物质的电离，并形成等离子体护套，该等离子体护套围绕并沿着纵向轴线延伸并且与腔的侧壁一致。 沿室的纵向轴线方向延伸的工作表面邻近侧壁定位，暴露于等离子体护套并由等离子体处理。 优选地，室的宽度与高度的比例为10:1或更大，使得室包括邻近等离子体护套的大面积平面，并且邻近其设置大面积基板或多个基板，由此 可以进行大面积处理，例如金刚石沉积。

    Process for preparing an amorphous ultrahard material on the basis of boron nitride
    93.
    发明授权
    Process for preparing an amorphous ultrahard material on the basis of boron nitride 失效
    基于氮化硼制备非晶超硬材料的方法

    公开(公告)号：US5541144A

    公开(公告)日：1996-07-30

    申请号：US256997

    申请日：1994-07-29

    Applicant: Jorg Wildenburg

    Inventor： Jorg Wildenburg

    IPC: B01J3/06 ,  C01B21/064 ,  C03B19/06 ,  C03C3/32 ,  C04B35/58 ,  C04B35/583

    CPC classification number: C03B19/06 ,  B01J3/062 ,  C03C3/328 ,  C04B35/583 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/068 ,  Y02P40/57

    Abstract: A process for preparing amorphous ultrahard material based on boron nitride which has a hardness sufficient to scratch diamond uses hexagonal or turbostratic boron nitride hBN as starting material. The starting material is compressed at pressures of at least 70 Kbar and heated to temperatures of at least of 1650.degree. C. until a boron nitride melt is obtained, the boron nitride melt is quenched by shutting off the heat supply and the quenched boron nitride melt is then relieved of the pressure. In the process, the hexagonal or turbostratic boron nitride employed as a starting material is treated in the presence of crystallisation inhibitors so that the formation of crystals is completely prevented and an amorphous structure is compacted by incorporation of reaction products comprising boron suboxides.

    Abstract translation: PCT No.PCT / EP93 / 00314 Sec。 371日期1994年7月29日第 102（e）日期1994年7月29日PCT提交1993年2月9日PCT公布。 出版物WO93 / 16015 日期1993年8月19日一种制备具有足以划伤金刚石的硬度的基于氮化硼的无定形超硬材料的方法使用六方晶或氮化硼氮化硼hBN作为原料。 起始材料在至少70Kbar的压力下被压缩并加热到至少1650℃的温度，直到获得氮化硼熔体，通过切断供热和淬火的氮化硼熔体来淬火氮化硼熔体 然后缓解压力。 在此过程中，在结晶抑制剂存在下处理用作起始材料的六方晶系或膨胀氮化硼，以便完全防止晶体的形成，并且通过掺入含有低氧化硼的反应产物使无定形结构压实。

    Isotopically pure single crystal epitaxial diamond films and their preparation
    99.
    发明授权
    Isotopically pure single crystal epitaxial diamond films and their preparation 失效
    同位素纯单晶外延金刚石薄膜及其制备方法

    公开(公告)号：US5360479A

    公开(公告)日：1994-11-01

    申请号：US547651

    申请日：1990-07-02

    Applicant: William F. Banholzer ,  Thomas R. Anthony ,  Dennis M. Williams

    Inventor： William F. Banholzer ,  Thomas R. Anthony ,  Dennis M. Williams

    IPC: B01J3/06 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04

    CPC classification number: C30B25/02 ,  B01J3/06 ,  C23C16/27 ,  C30B25/105 ,  C30B29/04 ,  B01J2203/0655

    Abstract: The present invention is directed to the production of single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13. The product is believed to be like that diamond product in application Ser. No. 448,469, but is made by a different method. In the present invention, isotopically pure single-crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single-crystal diamond comprises the steps of placing in a reaction chamber a single crystal substrate heated to an elevated CVD diamond-forming temperature. A gaseous mixture of hydrogen and a hydrocarbon of isotopically pure carbon-12 or carbon-13 is provided in the chamber. The gaseous mixture then is at least partially decomposed in the chamber to form an isotopically-pure single crystal diamond layer on the single crystal substrate disposed therein. The thus-formed isotopically-pure single crystal diamond layer optionally may be removed from the single crystal substrate. Another method for forming isotopically-pure single-crystal diamond comprises diffusing isotopically-pure carbon-12 or carbon-13 through a metallic catalyst/solvent under high pressure to a region containing a single crystal substrate to form an isotopically-pure single-crystal diamond layer on said single crystal substrate. The single crystal substrate is stable under the high pressure and elevated temperatures used during the diffusion process. The single crystal substrates optionally may be diamond, including the isotopically-pure single-crystal diamond films formed by the inventive method disclosed herein, thus forming multi-layered diamond structures.

    Abstract translation: 本发明涉及由同位素纯碳-12或碳-13组成的单晶金刚石的制备。 该产品被认为是应用Ser中的那种钻石产品。 No. 448,469，但是由不同的方法制成。 在本发明中，同位素纯的单晶金刚石直接从同位素纯碳-12或碳-13生长在单晶基底上。 用于形成同位素纯的单晶金刚石的一种方法包括以下步骤：将加热到升高的CVD金刚石形成温度的单晶衬底置于反应室中。 在室中提供氢气和同位素纯碳-12或碳-13烃的气体混合物。 气体混合物然后在腔室中至少部分分解，以在设置在其中的单晶衬底上形成同位素纯的单晶金刚石层。 如此形成的同位素纯的单晶金刚石层任选地可以从单晶衬底去除。 用于形成同位素纯的单晶金刚石的另一种方法包括将同位素纯的碳-12或碳-13通过金属催化剂/溶剂在高压下扩散到含有单晶底物的区域，以形成同位素纯的单晶金刚石 在所述单晶衬底上。 单晶基板在扩散过程中使用的高压和高温下是稳定的。 单晶衬底任选地可以是金刚石，包括通过本文公开的本发明方法形成的同位素纯的单晶金刚石膜，从而形成多层金刚石结构。

    Fastening devices
    100.
    发明授权
    Fastening devices 失效
    紧固装置

    公开(公告)号：US5332348A

    公开(公告)日：1994-07-26

    申请号：US849155

    申请日：1992-03-10

    Applicant: Jerome H. Lemelson

    Inventor： Jerome H. Lemelson

    IPC: A63C1/30 ,  B23D61/18 ,  B24D18/00 ,  B28D1/12 ,  C04B35/80 ,  E21B10/46 ,  F01L3/04 ,  F16C33/04 ,  H05K1/03 ,  F16B37/00 ,  B01J3/06 ,  F16B43/02

    CPC classification number: F16C33/04 ,  B23D61/185 ,  B24D18/00 ,  B28D1/12 ,  C04B35/80 ,  E21B10/46 ,  F01L3/04 ,  F16C33/043 ,  F16C33/12 ,  F16C9/00 ,  F02F2200/04 ,  F05C2201/021 ,  F05C2201/0448 ,  F16C2206/04 ,  H05K1/0373 ,  Y10S411/902

    Abstract: Fastening devices such as washers, seals and drive pins subject to corrosive deterioration of all or select portions thereof wherein all or such select portions are protected from such corrosion and failure by a thin coating or coatings of hard surface material or materials. In a preferred form, the fastening device is coated with a synthetic diamond material formed as a thin layer in situ thereon. In addition to preventing moisture and other corrosive material from penetrating to the base metal, such synthetic diamond material serves to preserve the surface integrity of the fastening device preventing the formation or spread of surface flaws produced during use or during the fabrication of the fastening device.

    Abstract translation: 诸如垫圈，密封件和驱动销的紧固装置遭受所有或选择部分的腐蚀性劣化，其中通过薄涂层或硬表面材料或材料的涂层来保护所有或这样的选择部分免受这种腐蚀和破坏。 在优选形式中，紧固装置涂覆有在其上原位形成为薄层的合成金刚石材料。 除了防止水分和其他腐蚀性材料渗透到贱金属之外，这种合成金刚石材料用于保持紧固装置的表面完整性，防止在使用期间或在制造紧固装置期间产生的表面缺陷的形成或扩展。

Patent Agency Ranking