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    Apparatus and method for controlling plasma size and position in plasma-activated chemical vapor deposition processes
    3.
    发明授权
    Apparatus and method for controlling plasma size and position in plasma-activated chemical vapor deposition processes 失效
    用于控制等离子体激活的化学气相沉积工艺中的等离子体尺寸和位置的装置和方法

    公开(公告)号：US5449412A

    公开(公告)日：1995-09-12

    申请号：US60953

    申请日：1993-05-13

    Applicant: John M. Pinneo

    Inventor： John M. Pinneo

    IPC: C23C16/26 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  H05H1/46 ,  C23C16/30

    CPC classification number: H01J37/32256 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/3299

    Abstract: A block of dielectric material having a long axis and a short axis and having low losses at a selected microwave frequency and a dielectric constant selected to produce a desired degree of phase modulation is mounted on a rotatable shaft in an orientation perpendicular to the long and short axes and arranged inside a waveguide feeding a CVD reactor containing a plasma species. The block is spun by a rotational force applied to the shaft at an angular acceleration such that the two axes of the block successively intersect the axis of the waveguide within the decay period of the plasma species. The frequency of phase modulation can be varied by changing the angular acceleration of the shaft, and the amplitude of the phase modulation can be varied by changing the ratio of block length to thickness and/or by selecting a material with higher dielectric constant. The incident microwave power may be modulated as a function of angular position of the spin shaft. By moving the apparent plasma and modulating the applied microwave power, a customized temperature profile may be achieved over a desired substrate area.

    Abstract translation: 具有长轴和短轴并且在选定的微波频率下具有低损耗并且选择用于产生期望程度的相位调制的介电常数的介电材料块以垂直于长短的方向安装在可旋转轴上 并且布置在馈送包含等离子体物质的CVD反应器的波导内部。 通过以角加速度施加到轴的旋转力来旋转该块，使得块的两个轴在等离子体物种的衰减周期内连续地与波导的轴线相交。 可以通过改变轴的角加速度来改变相位调制的频率，并且可以通过改变块长度与厚度的比率和/或通过选择具有较高介电常数的材料来改变相位调制的幅度。 入射微波功率可以作为旋转轴的角位置的函数进行调制。 通过移动表观等离子体并调制施加的微波功率，可以在期望的衬底区域上实现定制的温度分布。

    High thermal conductivity diamond/non-diamond composite materials
    5.
    发明授权
    High thermal conductivity diamond/non-diamond composite materials 失效
    高导热性金刚石/非金刚石复合材料

    公开(公告)号：US5270114A

    公开(公告)日：1993-12-14

    申请号：US954671

    申请日：1992-09-30

    Applicant: John A. Herb ,  John M. Pinneo ,  Clayton F. Gardinier

    Inventor： John A. Herb ,  John M. Pinneo ,  Clayton F. Gardinier

    IPC: C01B31/06 ,  C23C16/27 ,  B32B9/00

    CPC classification number: C23C16/274 ,  C01B31/065 ,  C23C16/27 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/249967 ,  Y10T428/2991 ,  Y10T428/30

    Abstract: The present invention comprises an article formed from a plurality of diamond particles and non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids. The high thermal conductivity CVD diamond material has an average crystallite size greater than about 15 microns, an intensity ratio of diamond- Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The thermal conductivity of the CVD diamond materials is in excess of 17 Wcm.sup.-1 K.sup.-1.

    Abstract translation: 本发明包括由多个金刚石颗粒和与金刚石沉积相容的非金刚石颗粒形​​成的制品，其预成形为所需形状。 每个颗粒具有与直接相邻的其它颗粒接触的第一表面区域，以及与紧邻的另一个颗粒间隔开的第二表面区域，以限定紧邻的颗粒之间的颗粒间空隙的边界 。 空隙被高导热性CVD金刚石材料渗透，连续地涂覆颗粒的第二表面区域并且包括从单个紧邻的颗粒的第二表面区域到颗粒间空隙中的合并生长前沿。 高导热性CVD金刚石材料具有大于约15微米的平均微晶尺寸，金刚石 - 拉曼峰 - 光致发光背景强度的强度比大于约20，金刚石拉曼峰的最大强度以计数/秒计 除以大于约3的1270cm-1处的光致发光强度，小于约6cm -1的拉曼sp3全宽半最大值和大于约25的金刚石 - 石墨拉曼比。CVD的热导率 金刚石材料超过17 Wcm-1K-1。

    Method for preparation of diamond ceramics
    6.
    发明授权
    Method for preparation of diamond ceramics 失效
    金刚石陶瓷的制备方法

    公开(公告)号：US4882138A

    公开(公告)日：1989-11-21

    申请号：US204058

    申请日：1988-06-07

    Applicant: John M. Pinneo

    Inventor： John M. Pinneo

    IPC: C01B31/06 ,  C23C16/27

    CPC classification number: C23C16/274 ,  C01B31/065 ,  C23C16/27

    Abstract: Processes are provided for consolidating diamond particles into a mechanically stable diamond mass, called a diamond ceramic. A compacted aggregation of diamond particles is subjected to low pressure PECVD conditions in the presence of atomic hydrogen, with or without a carbon source gas, whereby a mechanically stable diamond ceramic is formed substantially devoid of interstitial spaces.

    Abstract translation: 提供了将金刚石颗粒固结成机械稳定的金刚石块（称为金刚石陶瓷）的工艺。 金刚石颗粒的压实聚集体在存在原子氢的情况下经受低压PECVD条件，具有或不具有碳源气体，由此形成基本上没有间隙的机械稳定的金刚石陶瓷。

    Ultrasmooth adherent diamond film coated article and method for making same
    8.
    发明授权
    Ultrasmooth adherent diamond film coated article and method for making same 失效
    超平滑贴面金刚石薄膜涂层制品及其制作方法

    公开(公告)号：US5571615A

    公开(公告)日：1996-11-05

    申请号：US442258

    申请日：1995-05-16

    Applicant: William Phillips ,  John M. Pinneo

    Inventor： William Phillips ,  John M. Pinneo

    IPC: C23C16/27 ,  B32B15/04 ,  C01B31/06

    CPC classification number: C23C16/274 ,  C23C16/277 ,  C23C16/279 ,  Y10T428/265 ,  Y10T428/30

    Abstract: An ultrasmooth-diamond film has a thickness greater than about ten microns and an average grain size less than about 0.5 micron. The ultrasmooth diamond film of the present invention is grown using ordinary microwave plasma CVD methods, with a metal vapor source included in the reactor to produce vapor during the growth of the film. The metal vapor source may be chosen from the first row transition elements, chromium, iron, cobalt, and nickel, or from the lanthanides praseodymium, europeum, or erbium. Any metal capable of existing in the vapor phase in the presence of the hydrogen plasma, will cause formation of the ultrasmooth film of the present invention.

    Abstract translation: 超平滑金刚石膜的厚度大于约10微米，平均粒度小于约0.5微米。 使用普通微波等离子体CVD方法生长本发明的超平滑金刚石膜，其中包含在反应器中的金属蒸汽源在膜生长期间产生蒸气。 金属蒸汽源可以选自第一排过渡元素，铬，铁，钴和镍，或来自镧系元素镨，欧洲或铒。 在氢等离子体存在下，能够存在于气相中的任何金属都将导致本发明的超静电膜的形成。

    Methods for producing diamond materials with enhanced heat conductivity
    9.
    发明授权
    Methods for producing diamond materials with enhanced heat conductivity 失效
    生产具有增强导热性的金刚石材料的方法

    公开(公告)号：US5496596A

    公开(公告)日：1996-03-05

    申请号：US188279

    申请日：1994-01-28

    Applicant: John A. Herb ,  John M. Pinneo ,  Clayton F. Gardinier

    Inventor： John A. Herb ,  John M. Pinneo ,  Clayton F. Gardinier

    IPC: C01B31/06 ,  C23C16/04 ,  C23C16/27 ,  B05D3/06 ,  C23C16/26

    CPC classification number: C23C16/274 ,  C01B31/065 ,  C04B30/02 ,  C04B35/52 ,  C04B35/64 ,  C04B38/0038 ,  C23C16/045 ,  C23C16/27 ,  C04B2235/427 ,  C04B2235/667 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/249957 ,  Y10T428/249967 ,  Y10T428/24997 ,  Y10T428/24999 ,  Y10T428/2938 ,  Y10T428/2991 ,  Y10T428/30

    Abstract: A method for growing a diamond film, substantially free of voids, having an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1, and a diamond-to-graphite Raman ratio greater than about 25, includes the steps of preparing a substrate by abrasion with diamond particles; placing the substrate in a CVD reactor; depositing diamond during a first deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2 and 10 sccm CH.sub.4, at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining the substrate at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer which is substantially continuous; depositing a diamond during a second deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2, 4.6 sccm CO, and 9 ccm of CH.sub.4 at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of between about 2.45 GHz and maintaining said substrate material at a temperature of between about 625.degree. C. and 675.degree. C. for a period of time sufficient to form a diamond layer having a desired thickness; and removing the substrate material from said CVD reactor.

    Abstract translation: 用于生长基本上不含空隙的金刚石膜的方法，其平均微晶尺寸大于约15微米，金刚石拉曼峰的最大强度计数/秒除以1270cm -1以上的光致发光强度大于约 如图3所示，拉曼峰3全宽半最小值小于约6cm -1，金刚石 - 石墨拉曼比大于约25，包括用金刚石颗粒磨损制备基底的步骤; 将衬底放置在CVD反应器中; 通过在大约90托的压力下提供基本上由大约200sccm H 2和10sccm CH 4的混合物组成的气氛，在第一沉积阶段沉积金刚石，以约2.45的频率提供约1,800至1950瓦的微波功率 以在所述衬底的区域中点燃和维持等离子体，并将衬底保持在约625℃至675℃之间的温度下足以形成基本连续的金刚石层的时间; 在第二沉积阶段通过在约90托的压力下提供基本上由大约200sccm H 2，4.6sccm CO和9cm 3 CH 4的混合物组成的气氛来沉积金刚石，提供约1,800至1950瓦的微波功率 以约2.45GHz的频率，并将所述衬底材料保持在约625℃至675℃之间的温度下足以形成具有所需厚度的金刚石层的时间; 以及从所述CVD反应器中去除衬底材料。

    Structure and method for mounting laser diode arrays
    10.
    发明授权
    Structure and method for mounting laser diode arrays 失效
    安装激光二极管阵列的结构和方法

    公开(公告)号：US5325384A

    公开(公告)日：1994-06-28

    申请号：US818286

    申请日：1992-01-09

    Applicant: John A. Herb ,  John M. Pinneo

    Inventor： John A. Herb ,  John M. Pinneo

    IPC: H01L23/32 ,  H01S3/04 ,  H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/40 ,  H01S3/045

    CPC classification number: H01S5/4025 ,  H01S5/02 ,  H01L2224/48091 ,  H01S5/02264 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/024 ,  H01S5/4031 ,  H01S5/405

    Abstract: A carrier for a laser diode bar comprises a generally rectangularly shaped block formed from a dielectric material having a high thermal conductivity. The block includes a stepped recess formed therein having a height essentially equal to one half the height of a laser diode bar to be mounted thereon. An assembly for mounting a laser diode bar comprises a pair of carriers in contact with one another and oriented such that their stepped recesses are in facing relationship to one another. A laser diode bar is positioned between the carriers in the space left by their combined stepped recesses. A plurality of assemblies may be placed in contact with or separated from one another.

    Abstract translation: 用于激光二极管棒的载体包括由具有高导热性的电介质材料形成的大致矩形的块。 该块包括形成在其中的阶梯形凹部，其高度基本上等于要安装在其上的激光二极管条的高度的一半。 用于安装激光二极管棒的组件包括彼此接触并定向成使得它们的台阶凹槽彼此面对关系的一对托架。 激光二极管棒位于由它们组合的阶梯式凹槽留下的空间中的载体之间。 多个组件可以彼此接触或分离放置。

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