公开(公告)号：US12210706B2

公开(公告)日：2025-01-28

申请号：US17850026

申请日：2022-06-27

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Jochen Dangelmaier ,  Klaus Elian ,  Horst Theuss

IPC: G06F3/043 ,  G01N29/22 ,  G06F1/16 ,  H03K17/96

Abstract: An ultrasonic touch sensor is proposed for attachment to a casing, having a semiconductor chip including a substrate side and a component side, the semiconductor chip including an ultrasonic transducer element and the ultrasonic transducer element being arranged on the component side, having an acoustic coupling medium covering the semiconductor chip at least in the region of the ultrasonic transducer element, having electrical contact elements for controlling the ultrasonic transducer element, and the electrical contact elements being arranged on the component side of the semiconductor chip.

公开(公告)号：US12122667B2

公开(公告)日：2024-10-22

申请号：US18467897

申请日：2023-09-15

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Klaus Elian ,  Horst Theuss

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0051 ,  B81C1/00325 ,  B81B2203/033 ,  B81B2207/07 ,  B81B2207/096 ,  B81C2203/0118

Abstract: A method for producing sensor devices includes generating a semiconductor wafer having a plurality of sensor chips, wherein each sensor chip comprises a micro-electromechanical systems (MEMS) structure arranged at a main surface of the semiconductor wafer; forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the MEMS structures and forms a cavity above the corresponding MEMS structure; and singulating the semiconductor wafer into a plurality of sensor devices.

公开(公告)号：US12040543B2

公开(公告)日：2024-07-16

申请号：US17648730

申请日：2022-01-24

Applicant: Infineon Technologies AG

Inventor： Walter Hartner ,  Tuncay Erdoel ,  Klaus Elian ,  Christian Geissler ,  Bernhard Rieder ,  Rainer Markus Schaller ,  Horst Theuss ,  Maciej Wojnowski

IPC: H01Q13/06 ,  H01Q1/22 ,  H01Q1/52 ,  H01Q23/00

CPC classification number: H01Q13/06 ,  H01Q1/2283 ,  H01Q1/526 ,  H01Q23/00

Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.

公开(公告)号：US12030450B2

公开(公告)日：2024-07-09

申请号：US17351329

申请日：2021-06-18

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Horst Theuss

IPC: B60R21/0136 ,  B81B3/00 ,  B60R21/013

CPC classification number: B60R21/0136 ,  B81B3/0021 ,  B60R2021/01302 ,  B81B2201/0257

Abstract: A sensor device includes a sensor which is configured to detect a physical quantity generated by an impact event and to generate first measurement data based on the impact event. The sensor device also includes a MEMS microphone configured to detect sound waves generated by the impact event and to generate second measurement data based on the impact event. The sensor device is configured to provide the first measurement data and the second measurement data to a logic unit. The logic unit is configured to detect the impact event based on a combination of the first measurement data and the second measurement data.

公开(公告)号：US11876007B2

公开(公告)日：2024-01-16

申请号：US17651612

申请日：2022-02-18

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Horst Theuss

IPC: H01L21/673 ,  H01L23/049 ,  H01L23/20 ,  H01L21/67 ,  B81C1/00

CPC classification number: H01L21/67376 ,  B81C1/00285 ,  H01L21/67126 ,  H01L21/67393 ,  H01L23/049 ,  H01L23/20 ,  B81C2203/0145

Abstract: A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

公开(公告)号：US11784144B2

公开(公告)日：2023-10-10

申请号：US16885780

申请日：2020-05-28

Applicant: Infineon Technologies AG

Inventor： Horst Theuss

IPC: H01L23/66 ,  H01L23/528 ,  H01L23/522 ,  H01L25/18 ,  H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L23/00

CPC classification number: H01L23/66 ,  H01L23/3121 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/5283 ,  H01L23/5386 ,  H01L24/20 ,  H01L24/24 ,  H01L25/18 ,  H01L23/552 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/24137 ,  H01L2225/1035 ,  H01L2924/19031 ,  H01L2924/19032 ,  H01L2924/19033 ,  H01L2924/3025

Abstract: A semiconductor device comprises a first semiconductor chip, a first planar waveguide transmission line arranged within a BEOL metal stack of the first semiconductor chip, wherein the first planar waveguide transmission line comprises line sections situated opposite one another, and a second planar waveguide transmission line arranged over the first semiconductor chip and electrically coupled to the first planar waveguide transmission line, wherein the second planar waveguide transmission line comprises line sections situated opposite one another.

公开(公告)号：US11287344B2

公开(公告)日：2022-03-29

申请号：US16896628

申请日：2020-06-09

Applicant: Infineon Technologies AG

Inventor： Mathias Vaupel ,  Matthias Boehm ,  Steven Gross ,  Markus Loehndorf ,  Stephan Schmitt ,  Horst Theuss ,  Helmut Wietschorke

IPC: G01L9/12 ,  G01L19/14 ,  G01L19/00

Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.

公开(公告)号：US11267698B2

公开(公告)日：2022-03-08

申请号：US16157142

申请日：2018-10-11

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Alfons Dehe

IPC: B81B7/00

Abstract: A transducer structure is disclosed. The transducer structure may include a substrate with a MEMS structure located on a first side of the substrate and a lid coupled to the first side of the substrate and covering the MEMS structure. The substrate may include an electric contact which is laterally displaced from the lid on the first side of the substrate and electrically coupled to the MEMS structure.

公开(公告)号：US11143626B2

公开(公告)日：2021-10-12

申请号：US16245873

申请日：2019-01-11

Applicant: Infineon Technologies AG

Inventor： Horst Theuss

IPC: G01N29/24 ,  G01N29/032

Abstract: A photo-acoustic gas sensor may include a detector component. The detector component includes a package that defines a reference volume. The reference volume houses a reference gas. The detector component includes a pressure sensing element to measure an amount of pressure in the reference volume. The amount of pressure in the reference volume depends on absorption of a wavelength of light by the reference gas in the reference volume. A sensitivity of the pressure sensing element when measuring the amount of pressure in the reference volume depends on a length of a reference path associated with the reference volume. The detector component includes a reference path structure that causes the length of the reference path to be less than or equal to 0.5 millimeters.

公开(公告)号：US11105776B2

公开(公告)日：2021-08-31

申请号：US16534143

申请日：2019-08-07

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Rainer Markus Schaller

IPC: G01N29/24 ,  G01N21/17

Abstract: A detector module is disclosed. In one example, the detector module is for a photo-acoustic gas sensor and comprises a first substrate made of a semiconductor material and comprising a first surface and a second surface opposite to the first surface, a second substrate comprising a third surface, a fourth surface opposite to the third surface, and a first recess formed in the fourth surface. The second substrate is connected with its fourth surface to the first substrate so that the first recess forms an airtight-closed first cell which is filled with a reference gas and a pressure sensitive element comprising a membrane disposed in contact with the reference gas. The detector module is further configured such that a beam of light pulses passes through the first substrate and thereby enters the first cell.