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    HIGH ASPECT RATIO POLYMER ELONGATE AND ONE-DIMENSIONAL MICRO STRUCTURE FABRICATION
    102.
    发明申请
    HIGH ASPECT RATIO POLYMER ELONGATE AND ONE-DIMENSIONAL MICRO STRUCTURE FABRICATION 审中-公开
    高倍率聚合物高分子和一维微结构制造

    公开(公告)号：US20140127508A1

    公开(公告)日：2014-05-08

    申请号：US14068224

    申请日：2013-10-31

    Applicant: The Board of Trustees of the University of llinois

    Inventor： M. Taher A. Saif ,  Jagannathan Rajagopalan

    IPC: B29C45/40

    CPC classification number: B29C33/42 ,  B01L3/502707 ,  B01L2300/0627 ,  B01L2300/0816 ,  B01L2300/123 ,  B29K2083/00 ,  B29L2031/753 ,  B29L2031/756 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0118 ,  B81C99/0085 ,  B81C2201/034 ,  Y10T428/298

    Abstract: A preferred method of the invention introduces organosilicon polymer into the reservoir of a mold with trenches defining a negative mold impression of a feature that has a high aspect ratio in fluid communication with the micro-dimensioned reservoir. The mold is preferably coated with a low-stiction coating. The polymer is moved via capillary action into the negative mold from the reservoir. The polymer is cured. The polymer is then released from the mold. Preferably, the polymer is soaked in a releasing solution prior to release. Preferably, the polymer is released by gripping cured polymer in the reservoir and gently peeling the cured micropolymer from the mold. In preferred embodiments, the polymer is poly-dimethyl-siloxane (PDMS). A preferred structure formed by methods of the invention is polymer microbeam in a liquid having a length of one to a few millimeters and a stiffness of k

    Abstract translation: 本发明的优选方法将有机硅聚合物引入到具有沟槽的模具的储存器中，沟槽限定了具有与微尺寸储存器流体连通的高纵横比的特征的负模印迹。 模具优选地涂覆有低粘度涂层。 聚合物通过毛细作用移动到储存器的负模具中。 聚合物固化。 然后将聚合物从模具中释放出来。 优选地，在释放之前将聚合物浸泡在释放溶液中。 优选地，聚合物通过将固化的聚合物夹持在储存器中并从模具轻轻剥离固化的微聚合物来释放。 在优选的实施方案中，聚合物是聚二甲基硅氧烷（PDMS）。 通过本发明的方法形成的优选结构是在长度为1至几毫米且刚度为k <0.1pN /μm的液体中的聚合物微束。 可以与梁一起创建气动特征。 优选的微束可以是十或几十微米深，宽和毫米或几毫米长。

    Method for Functionalising Fluid Lines Contained in a Micromechanical Device, Micromechanical Device Including Functionalised Lines, and Method for Manufacturing Same
    105.
    发明申请
    Method for Functionalising Fluid Lines Contained in a Micromechanical Device, Micromechanical Device Including Functionalised Lines, and Method for Manufacturing Same 有权
    包含在机械装置中的流体线的功能化方法，包括功能化线的微机械装置及其制造方法

    公开(公告)号：US20130149196A1

    公开(公告)日：2013-06-13

    申请号：US13805491

    申请日：2011-06-29

    Applicant: Vincent Agache ,  Antoine Hoang ,  Francoise Vinet

    Inventor： Vincent Agache ,  Antoine Hoang ,  Francoise Vinet

    IPC: G03F7/24

    CPC classification number: G03F7/24 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2201/06 ,  B81C1/00206 ,  B81C2201/0154 ,  F04B19/006

    Abstract: The present invention relates to a method for functionalising fluid lines (1b) in a micromechanical device, the walls of which include an opaque layer. For this purpose, the invention provides a method for functionalising a micromechanical device provided with a fluid line including a peripheral wall (5) having a surface (2) outside the line and an inner surface (3) defining a space (1b) in which a fluid can circulate, the peripheral wall at least partially including a silicon layer (5a). The method includes the following steps: a) providing a device, the peripheral wall (5) of which at least partially includes a silicon layer (5a) having, at least locally, a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm; c) silanising at least the inner surface of the fluid line; d) the localised, selective photo-deprotection on at least the inner surface of the silanised device by exposing the peripheral wall (5) at the point at which said wall has a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm.

    Abstract translation: 本发明涉及一种在微机械装置中功能化流体管线（1b）的方法，其中壁部包括不透明层。 为此，本发明提供了一种功能化微机械装置的方法，该微机械装置具有流体管线，该流体管线包括具有在管线外部的表面（2）的周壁（5）和限定空间（1b）的内表面（3），其中 流体可以循环，周壁至少部分地包括硅层（5a）。 该方法包括以下步骤：a）提供一种器件，其外围壁（5）至少部分地包括硅层（5a），该硅层至少局部地具有大于100nm的厚度（e）并且小于 200nm，有利地为160〜180nm; c）至少对流体管线的内表面进行硅烷化; d）通过在所述壁的厚度（e）大于100nm且小于200nm的点处暴露周壁（5），至少在硅烷化装置的内表面上进行局部选择性光 - 去保护 ，有利地为160至180nm。

    Three-dimensional nanodevices including nanostructures
    106.
    发明授权
    Three-dimensional nanodevices including nanostructures 有权
    包括纳米结构在内的三维纳米器件

    公开(公告)号：US08263964B2

    公开(公告)日：2012-09-11

    申请号：US12672995

    申请日：2008-05-19

    Applicant: Han Young Yu ,  Byung Hoon Kim ,  An Soon Kim ,  In Bok Baek ,  Chil Seong Ah ,  Jong Heon Yang ,  Chan Woo Park ,  Chang Geun Ahn

    Inventor： Han Young Yu ,  Byung Hoon Kim ,  An Soon Kim ,  In Bok Baek ,  Chil Seong Ah ,  Jong Heon Yang ,  Chan Woo Park ,  Chang Geun Ahn

    IPC: H01L29/06

    CPC classification number: H01J49/4205 ,  B81B7/0025 ,  B81B2201/0214 ,  B81B2201/0271 ,  B82Y10/00 ,  B82Y40/00 ,  G01N2291/0257 ,  H01J49/0018 ,  H01L29/0673 ,  H01L29/7613 ,  H01L29/775 ,  H03H2009/02314

    Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.

    Abstract translation: 提供了三维（3D）纳米器件，包括3D纳米结构。 3D纳米装置包括至少一个纳米结构，每个纳米结构包括漂浮在基板上的振荡部分和支撑部分，用于支撑振荡部分的两个纵向端部，支撑件设置在基板上以支撑每个纳米结构的支撑部分， 设置在基板的上部，基板的下部或基板的上部和下部的至少一个控制器，以控制每个纳米结构;以及感测单元，设置在每个振荡部分上以感测 外部供应的吸附材料。 因此，与典型的平面器件不同，可以减少纳米器件与衬底之间的杂质的产生，并且可能引起机械振动。 特别地，由于3D纳米结构具有机械和电学特性，可以使用纳米机电系统（NEMS）提供包括新的3D纳米结构的3D纳米器件。 此外，可以使用与平面器件不同的简单工艺来形成单电子器件，自旋器件或单电子晶体管（SET）场效应晶体管（FET）混合器件。

    Method for making microchannels on a substrate, and substrate including such microchannels
    108.
    发明申请
    Method for making microchannels on a substrate, and substrate including such microchannels 有权
    在基板上制造微通道的方法，以及包括这种微通道的基板

    公开(公告)号：US20120043649A1

    公开(公告)日：2012-02-23

    申请号：US13202951

    申请日：2010-02-24

    Applicant: Abdennour Abbas ,  Didier Guillochon ,  Bertrand Bocquet ,  Philippe Supiot

    Inventor： Abdennour Abbas ,  Didier Guillochon ,  Bertrand Bocquet ,  Philippe Supiot

    IPC: H01L21/02 ,  H01L29/02

    CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0108 ,  B81C2201/018

    Abstract: The present invention relates to a process for fabricating microchannels on a substrate and to a substrate comprising these microchannels, the invention being especially applicable to the fabrication of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems.The process includes a step (a) of producing at least one or at least two patterns 2 on the surface of a bottom layer 1 and a step (b) of depositing, on top of the bottom layer and the pattern or patterns, a layer 3 of polymer material obtained by polymerizing an organic or organometallic monomer that contains siloxane functional groups, for example tetramethyldisiloxane, in a plasma-enhanced, optionally remote plasma-enhanced, chemical vapor deposition reactor (PECVD or optionally RPECVD) reactor.The layer of polymer material is deposited so as to create, in place of the pattern and after development by decomposing this pattern, or between the two patterns without development/decomposition, a channel 4a, 4b, 4c, 4d closed over at least part of its length.

    Abstract translation: 本发明涉及一种用于在衬底上制造微通道的方法以及包括这些微通道的衬底，本发明特别适用于微电子，微流体和/或微机械系统的微结构化衬底的制造。 该方法包括在底层1的表面上产生至少一个或至少两个图案2的步骤（a）和在底层和图案或图案的顶部上沉积层（b）的步骤 通过聚合含有硅氧烷官能团的有机或有机金属单体（例如四甲基二硅氧烷）在等离子体增强的，任选地远程等离子体增强的化学气相沉积反应器（PECVD或任选的RPECVD）反应器中获得的聚合物材料3。 沉积聚合物材料层，以通过分解该图案或在两个图案之间或不在显影/分解下产生代替图案和显影之后，通道4a，4b，4c，4d在至少部分 它的长度。

    METHOD TO FORM NANOPORE ARRAY
    109.
    发明申请
    METHOD TO FORM NANOPORE ARRAY 有权
    形成纳米阵列的方法

    公开(公告)号：US20120040512A1

    公开(公告)日：2012-02-16

    申请号：US12854192

    申请日：2010-08-11

    Applicant: Zhengwen Li ,  Chengwen Pei ,  Frank Yang

    Inventor： Zhengwen Li ,  Chengwen Pei ,  Frank Yang

    IPC: H01L21/20 ,  H01L21/302

    CPC classification number: G01N33/48721 ,  B81B2201/0214 ,  B81C1/00087 ,  B82Y30/00

    Abstract: A method of forming nanopore is provided that includes forming a first structure on a substrate, and forming a second structure overlying the first structure. An intersecting portion of the first and the second structures is etched to provide an opening of nanopore dimensions. The substrate may be etched with a backside substrate etch to expose the nanopore opening.

    Abstract translation: 提供一种形成纳米孔的方法，包括在基底上形成第一结构，并形成覆盖第一结构的第二结构。 蚀刻第一和第二结构的相交部分以提供纳米孔尺寸的开口。 可以用背面基板蚀刻蚀刻衬底以暴露纳米孔开口。

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