Abstract:
A flexible wireless MEMS microphone includes a substrate of a flexible polymeric material, a flexible MEMS transducer structure formed on the substrate by PECVD, an antenna printed on the substrate for communicating with an outside source, a wire and interface circuit embedded in the substrate to electrically connect the flexible MEMS transducer and the antenna, a flexible battery layer electrically connected to the substrate for supplying power to the MEMS transducer, and a flexible bluetooth module layer electrically connected to the battery layer. The flexible MEMS transducer includes a flexible substrate, a membrane layer deposited on the substrate, a lower electrode layer formed on the membrane layer, an active layer formed by depositing a piezopolymer on the lower electrode layer, an upper electrode layer formed on the active layer, and a first and a second connecting pad electrically connected to the lower and upper electrode layers, respectively.
Abstract:
A micro-electromechanical dimensioned bimorph structure includes a first element layer structure, and a second element layer structure. The element layer structures are provided in various combinations, including piezoelectric/piezoelectric, antiferroelectric/antiferroelectric or antiferroelectric/piezoelectric. The layer thickness of the element structure is less than 100 μm. A bonding layer bonds the first element structure directly to the second element structure and the bonding layer thickness is less than 10 μm. The bimorph structure can be made in various forms including a cantilever or a diaphragm. Microfluidic devices using the bimorph structures may also be constructed.
Abstract:
The mirror device has a mirror 2, and a supporting mechanism which elastically supports the mirror 2 on a substrate 1 in a state in which the mirror floats from the substrate 1, so that the mirror can be inclined in an arbitrary direction. The supporting mechanism has three supporting parts 3A, 3B and 3C that mechanically connect the substrate 1 and mirror 2. Each of the supporting parts 3A, 3B and 3C has one or more plate spring parts 5 that are constructed from a thin film consisting of one or more layers. One end portion of each plate spring part 5 is connected to the substrate 1 via a leg part 9 which has a rising part that rises from the substrate 1. The other end portion of the plate spring part 5 is mechanically connected to the mirror 2 via a connecting part which has a rising part that rises from this other end portion. The mirror 2 is supported on the substrate 1 only via the plate spring part 5 of the respective 3A, 3B and 3C. As a result, compactness and mass production characteristics can be greatly improved while maintaining superior optical characteristics.
Abstract:
To provide nanotweezers and a nanomanipulator which allow great miniaturization of the component and are capable of gripping various types of nano-substances such as insulators, semiconductors and conductors and of gripping nano-substances of various shapes. Electrostatic nanotweezers 2 are characterized in that the nanotweezers 2 are comprised of a plurality of nanotubes whose base end portions are fastened to a holder 6 so that the nanotubes protrude from the holder 6, coating films which insulate and cover the surfaces of the nanotubes, and lead wires 10, 10 which are connected to two of the nanotubes 8, 9; and the tip ends of the two nanotubes are freely opened and closed by means of an electrostatic attractive force generated by applying a voltage across these lead wires. Furthermore, by way of forming a piezo-electric film 32 on the surface of the nanotube 9, and the tip ends of the nanotubes are freely opened and closed by expanding and contracting the piezo-electric film, thus allowing any desired nano-substances to be handled regardless of whether the nano-substances are insulators, semiconductors or conductors. Furthermore, if by way of designing three nanotubes so as to be freely opened and closed by an electrostatic system, nano-substances of various shapes such as spherical, rod-form, etc. can be handled. Moreover, a nanomanipulator that is constructed by combining the nanotweezers with a three-dimensional driving mechanism facilitates the gripping, moving and releasing of nano-substances
Abstract:
To provide nanotweezers and a nanomanipulator which allow great miniaturization of the component and are capable of gripping various types of nano-substances such as insulators, semiconductors and conductors and of gripping nano-substances of various shapes. Electrostatic nanotweezers 2 are characterized in that the nanotweezers 2 are comprised of a plurality of nanotubes whose base end portions are fastened to a holder 6 so that the nanotubes protrude from the holder 6, coating films which insulate and cover the surfaces of the nanotubes, and lead wires 10, 10 which are connected to two of the nanotubes 8, 9; and the tip ends of the two nanotubes are freely opened and closed by means of an electrostatic attractive force generated by applying a voltage across these lead wires. Furthermore, by way of forming a piezo-electric film 32 on the surface of the nanotube 9, and the tip ends of the nanotubes are freely opened and closed by expanding and contracting the piezo-electric film, thus allowing any desired nano-substances to be handled regardless of whether the nano-substances are insulators, semiconductors or conductors. Furthermore, if by way of designing three nanotubes so as to be freely opened and closed by an electrostatic system, nano-substances of various shapes such as spherical, rod-form, etc. can be handled. Moreover, a nanomanipulator that is constructed by combining the nanotweezers with a three-dimensional driving mechanism facilitates the gripping, moving and releasing of nano-substances
Abstract:
This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.
Abstract:
A method of fabricating a semiconductor integrated microactuator device that includes the steps of: bonding or laminating a driving element to a substrate for generating a vertical motion, and coupling a conversion element to the driving element for converting the vertical motion into rotational motion. The method can be effectively used for micro-actuators that utilize Coulomb's force, vibration, and fluid pressure as their driving force.
Abstract:
A device for providing micro positioning having an operating range in the submicron order in the X and Y directions, respectively. Positioning is achieved by a device which includes a driving section bonded to a silicon wafer for applying a driving force to excite vertical motion, and a mechanism for converting this vertical motion into rotational motion. Three types of micro actuators are described herein: one, that uses vibration as its driving force; a second, that uses Coulomb's force; and a third, that utilizes fluid pressure, such as air.
Abstract:
A device for providing micro positioning having an operating range in the submicron order in the X and Y directions, respectively. Positioning is achieved by depositing a pair of aluminum electrodes on a piezoelectric element bonded on a silicon wafer, vertically moving the piezoelectric element, arranging a plurality of micro actuators whose contact pin ends, formed on the aluminum electrodes, rotate on a surface as an array, and displacing in the horizontal direction a moving member arranged on the micro actuator array.
Abstract:
An actuator element of a MEMS device on a substrate able to create large, out-of-plane deflection includes two separated metallic layers contacting the substrate. The second metallic layer has a first portion contacting the substrate and a second portion having cantilevered over the substrate and first metallic layer. A first insulating layer contacts the cantilevered metallic layer on a bottom contacting surface and a second insulating layer contacting the cantilevered metallic layer on a portion of a top contacting surface. The second, cantilevered portion of the metallic layer is prestressed causing the distal end to deform away from the substrate. Applying a voltage potential between the first and second metallic layers creates an electrostatic field drawing the distal end toward the substrate.